Search Results - "Lei, Wenyu"

A priori error estimates of regularized elliptic problems by Heltai, Luca, Lei, Wenyu

“…Approximations of the Dirac delta distribution are commonly used to create sequences of smooth functions approximating nonsmooth (generalized) functions, via…”
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Numerical modeling of anisotropic ferroelectric materials with hybridizable discontinuous Galerkin methods by Lei, Wenyu

“…We investigate a gradient flow structure of the Ginzburg–Landau–Devonshire (GLD) model for anisotropic ferroelectric materials by reconstructing its energy…”
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Numerical approximation of the integral fractional Laplacian by Bonito, Andrea, Lei, Wenyu, Pasciak, Joseph E.

“…We propose a new nonconforming finite element algorithm to approximate the solution to the elliptic problem involving the fractional Laplacian. We first derive…”
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Finite Element Discretizations for Variable-Order Fractional Diffusion Problems by Lei, Wenyu, Turkiyyah, George, Knio, Omar

“…We present a finite element discretization scheme for multidimensional fractional diffusion problems with spatially varying diffusivity and fractional order…”
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A Weighted Hybridizable Discontinuous Galerkin Method for Drift-Diffusion Problems by Lei, Wenyu, Piani, Stefano, Farrell, Patricio, Rotundo, Nella, Heltai, Luca

“…In this work, we propose a weighted hybridizable discontinuous Galerkin method (W-HDG) for drift-diffusion problems. By using specific exponential weights when…”
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ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors by Wen, Xiaokun, Lei, Wenyu, Li, Xinlu, Di, Boyuan, Zhou, Ye, Zhang, Jia, Zhang, Yuhui, Li, Liufan, Chang, Haixin, Zhang, Wenfeng

“…Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of…”
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The approximation of parabolic equations involving fractional powers of elliptic operators by Bonito, Andrea, Lei, Wenyu, Pasciak, Joseph E.

“…We study the numerical approximation of a time dependent equation involving fractional powers of an elliptic operator L defined to be the unbounded operator…”
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High performance Ge/MoS2 heterojunction photodetector with a short active region by Li, Liufan, Wen, Xiaokun, Lei, Wenyu, Di, Boyuan, Zhang, Yuhui, Zeng, Jinghao, Zhang, Youwei, Chang, Haixin, Zhou, Longzao, Zhang, Wenfeng

“…We present a Ge/MoS2 van der Waals heterojunction photodetector with a short active region constructed using a transfer process. The device exhibits broadband,…”
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Thickness-dependent carrier polarity of MoTe2 transistors with NiTe2 semimetal contacts by Di, Boyuan, Wen, Xiaokun, Lei, Wenyu, Zhang, Yuhui, Li, Liufan, Xu, Xinyue, Kong, Wenchao, Chang, Haixin, Zhang, Wenfeng

“…We demonstrated that the carrier polarity of MoTe2 transistors can be modulated by controlling the channel thickness with NiTe2 semimetal contacts. The…”
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High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric by Zhang, Yuhui, Di, Boyuan, Wen, Xiaokun, Lei, Wenyu, Li, Liufan, Xu, Xinyue, Kong, Wenchao, Chang, Haixin, Zhang, Wenfeng

“…We demonstrated that ternary HfAlO2 amorphous film prepared with common co-sputtering technology can be a suitable gate dielectric for bilayer MoTe2…”
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High performance MoTe2/Si heterojunction photodiodes by Lei, Wenyu, Cao, Guowei, Wen, Xiaokun, Yang, Li, Zhang, Pengzhen, Zhuge, Fuwei, Chang, Haixin, Zhang, Wenfeng

“…We report the fabrication of high performance MoTe2/Si heterojunction photodiodes by direct growth of MoTe2 patterns on a commercial Si substrate by a feasible…”
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ZrTe 2 Compound Dirac Semimetal Contacts for High-Performance MoS 2 Transistors by Wen, Xiaokun, Lei, Wenyu, Li, Xinlu, Di, Boyuan, Zhou, Ye, Zhang, Jia, Zhang, Yuhui, Li, Liufan, Chang, Haixin, Zhang, Wenfeng

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High performance near-infrared MoTe2/Ge heterojunction photodetector fabricated by direct growth of Ge flake on MoTe2 film substrate by Lei, Wenyu, Wen, Xiaokun, Cao, Guowei, Yang, Li, Zhang, Pengzhen, Zhuge, Fuwei, Chang, Haixin, Zhang, Wenfeng

“…We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor…”
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Vertical MoTe₂/Ge Heterojunction Photodiode for 1550-nm Near-Infrared Photodetection by Lei, Wenyu, Wen, Xiaokun, Yang, Li, Zhang, Pengzhen, Cao, Guowei, Zhuge, Fuwei, Zhang, Youwei, Chang, Haixin, Zhang, Wenfeng

“…We demonstrate a vertical MoTe2/Ge heterojunction near-infrared photodiode that exhibits a low dark current density, an improved capacity of weak optical…”
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Reduced Schottky barrier height at metal/CVD-grown MoTe2 interface by Zhang, Pengzhen, Di, Boyuan, Lei, Wenyu, Wen, Xiaokun, Zhang, Yuhui, Li, Liufan, Yang, Li, Chang, Haixin, Zhang, Wenfeng

“…We demonstrated that Schottky barrier height (SBH) at the metal/CVD-grown MoTe2 interface can be significantly reduced with tunnel contact by inserting a thin…”
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Adaptive media playout buffer management for latency optimization of mobile live streaming by Jiexi Wang, Wenyu Lei, Peng Xu, Jun Sun, Zongming Guo

“…Media playout buffer is widely employed by today's streaming media player to cope with short-term network variation and achieve continuous playout. However,…”
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High‐Performance Large‐Scale Vertical 1T'/2H Homojunction CVD‐Grown Polycrystalline MoTe2 Transistors by Xie, Zijian, Lei, Wenyu, Zhang, Wenfeng, Liu, Yuan, Yang, Li, Wen, Xiaokun, Chang, Haixin

“…2D transition metal dichalcogenides (TMDs) have emerged as an ideal alternative to silicon in advanced electronics. Especially, MoTe2 attracts peculiar…”
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High‐Performance and Low‐Power Polycrystalline MoTe2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric by Liu, Yuan, Wen, Xiaokun, Lei, Wenyu, Yang, Li, Zhang, Pengzhen, Zhang, Yuhui, Chang, Haixin, Zhang, Wenfeng

“…Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs) also show…”
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High‐Performance and Low‐Power Polycrystalline MoTe 2 Thin Film Transistors with Solution‐Processed Ternary Oxide High‐k Dielectric by Liu, Yuan, Wen, Xiaokun, Lei, Wenyu, Yang, Li, Zhang, Pengzhen, Zhang, Yuhui, Chang, Haixin, Zhang, Wenfeng

“…Abstract Besides the widely investigated potential as alternative to silicon in microelectronics, semiconducting 2D transition metal dichalcogenides (TMDs)…”
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Evaluating the Electrical Characteristics of Quasi-One-Dimensional ZrTe3 Nanoribbon Interconnects by Wen, Xiaokun, Lei, Wenyu, Ni, Liangyi, Yang, Li, Zhang, Pengzhen, Liu, Yuan, Chang, Haixin, Zhang, Wenfeng

“…The aggressive scaling of integrated circuits requires both nanoscale device channels and interconnects. The current Cu interconnects suffer from the…”
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