Search Results - "Lehnen, Peer"

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  1. 1
    High-density MIM capacitors with HfO2 dielectrics

    High-density MIM capacitors with HfO2 dielectrics by Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen

    Published in Thin solid films (22-12-2004)
    “…Metal--insulator--metal (MIM) capacitors with high--k HfO2 dielectrics were fabricated and investigated. Experimental results show low leakage current…”
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  2. 2
    The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode

    The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode by Lu, Wen-Tai, Lin, Po-Ching, Huang, Tiao-Yuan, Chien, Chao-Hsin, Yang, Ming-Jui, Huang, Ing-Jyi, Lehnen, Peer

    Published in Applied physics letters (18-10-2004)
    “…The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2∕SiO2 gate stack and TiN gate…”
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  3. 3
    Improved reliability of HfO2/SiON gate stack by fluorine incorporation

    Improved reliability of HfO2/SiON gate stack by fluorine incorporation by LU, Wen-Tai, CHIEIN, Chao-Hsin, LAN, Wen-Ting, LEE, Tsung-Chieh, LEHNEN, Peer, HUANG, Tiao-Yuan

    Published in IEEE electron device letters (01-04-2006)
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  4. 4
    High-density MIM capacitors with HfO 2 dielectrics

    High-density MIM capacitors with HfO 2 dielectrics by Perng, Tsu-Hsiu, Chien, Chao-Hsin, Chen, Ching-Wei, Lehnen, Peer, Chang, Chun-Yen

    Published in Thin solid films (2004)
    “…Metal–insulator–metal (MIM) capacitors with high- k HfO 2 dielectrics were fabricated and investigated. Experimental results show low leakage current densities…”
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  5. 5
    High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory

    High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory by Chien, Chao-Hsin, Wang, Ding-Yeong, Yang, Ming-Jui, Lehnen, P, Leu, Ching-Chich, Chuang, Shiow-Huey, Huang, Tiao-Yuan, Chang, C.Y

    Published in IEEE electron device letters (01-09-2003)
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  6. 6
    HfO2 MIS capacitor with copper gate electrode

    HfO2 MIS capacitor with copper gate electrode by PERNG, Tsu-Hsiu, CHIEN, Chao-Hsin, CHEN, Ching-Wei, YANG, Ming-Jui, LEHNEN, Peer, CHANG, Chun-Yen, HUANG, Tiao-Yuan

    Published in IEEE electron device letters (01-12-2004)
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  7. 7
    Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment

    Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO 2 Gate Stacks by Post Deposition N 2 O Plasma Treatment by Lu, Wen-Tai, Chien, Chao-Hsin, Lan, Wen-Ting, Lee, Tsung-Chieh, Yang, Ming-Jui, Shen, Shih-Wen, Lehnen, Peer, Huang, Tiao-Yuan

    Published in Japanese Journal of Applied Physics (01-11-2005)
    “…In this work, we found that employing a post deposition N 2 O plasma treatment following the deposition of HfO 2 film can effectively improve the electrical…”
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  8. 8
    Electrical Characteristics of Thin HfO 2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments

    Electrical Characteristics of Thin HfO 2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments by Chen, Ching-Wei, Chien, Chao-Hsin, Perng, Tsu-Hsiu, Yang, Ming-Jui, Liang, Jann-Shyang, Lehnen, Peer, Tsui, Bing-Yue, Chang, Chun-Yen

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…We have investigated the effects that various pre-deposition surface treatments, such as HF dipping (HF-dipped), NH 3 surface nitridation (NH 3 -annealed), and…”
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  9. 9
    Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy2O3 capping

    Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy2O3 capping by O'Connor, R., Chang, V.S., Pantisano, L., Ragnarsson, L.-A., Aoulaiche, M., O'Sullivan, B., Adelmann, C., Van Elshocht, S., Lehnen, P., HongYu Yu, Groeseneken, G.

    “…Recently, thin rare-earth oxide dielectric capping layers between the high-k and metal gate have been used to modulate the threshold voltage (Vt) of MOSFETs…”
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  10. 10
    High-density MIM capacitors with HfO2 dielectrics

    High-density MIM capacitors with HfO2 dielectrics by PERNG, Tsu-Hsiu, CHIEN, Chao-Hsin, CHEN, Ching-Wei, LEHNEN, Peer, CHANG, Chun-Yen

    Published in Thin solid films (2004)
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