Search Results - "Legodi, M.J."

Defect characterization by DLTS of AlGaN UV Schottky photodetectors by Legodi, M.J., Hullavarad, S.S., Goodman, S.A., Hayes, M., Auret, F.D.

“…Deep traps are studied in MBE grown n-Al x Ga 1− x N Schottky photodiodes using deep level transient spectroscopy (DLTS). These daylight blind UV…”
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Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density by Paradzah, A.T., Auret, F.D., Legodi, M.J., Omotoso, E., Diale, M.

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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes by Tunhuma, S.M., Auret, F.D., Legodi, M.J., Diale, M.

“…In this study, the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature…”
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Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons by Omotoso, E., Paradzah, A.T., Janse van Rensburg, P.J., Legodi, M.J., Auret, F.D., Igumbor, E., Danga, H.T., Diale, M., Meyer, W.E.

“…We have characterised the deep level defects present before and after annealing the proton-irradiated Ni/nitrogen-doped 4H-SiC Schottky barrier diodes (SBDs)…”
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Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC by Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E., Auret, F.D.

“…The effect of high energy electron (HEE) irradiation on nickel Schottky contacts fabricated on lowly-doped n-type 4H-SiC was investigated by deep level…”
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Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC by Tunhuma, Shandirai M., Auret, F.D., Legodi, M.J., Nel, J., Diale, M.

“…We have studied the defects introduced in n-type 4H-SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage…”
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Electrical characterization of 5.4MeV alpha-particle irradiated 4H-SiC with low doping density by Paradzah, A.T., Auret, F.D., Legodi, M.J., Omotoso, E., Diale, M.

“…Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent current rectification with about ten orders of magnitude between −50V and +2V. The…”
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Interface properties of an O2 annealed Au/Ni/n-Al0.18Ga0.82N Schottky contact by Legodi, M.J., Meyer, W.E., Auret, F.D.

“…We oxidized a Ni/Au metal bi-layer contact fabricated on HVPE Al0.18Ga0.82N from 373K to 573K in 100K steps. In the range 1kHz to 2MHz, the…”
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Fabrication and characterisation of NiO/ZnO structures by Nel, J.M, Auret, F.D, Wu, L, Legodi, M.J, Meyer, W.E, Hayes, M

“…Metal-oxide-semiconductor (MOS) structures were formed on n-ZnO and the electrical properties were compared to Au Schottky barrier diodes (SBDs) on similar…”
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Electrical defects introduced during high-temperature irradiation of GaN and AlGaN by Hayes, M., Auret, F.D., Wu, L., Meyer, W.E., Nel, J.M., Legodi, M.J.

“…It has previously been found that, for example, 2.0MeV protons at room temperature introduces two main electron traps at introduction rates of 400 and 600cm–1,…”
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Phase Formation Between Iridium Thin Films and Zirconium Carbide Prepared by Spark Plasma Sintering at Relatively Low Temperatures by Alawad, B.A.B., Njoroge, E.G., Ntsoane, T.P., Legodi, M.J., Thabethe, T.T., Hlatshwayo, T.T., Malherbe, J.B.

“…Zirconium carbide (ZrC) samples were prepared by spark plasma sintering (SPS), at temperatures of 1700 °C, 1900 °C and 2100 °C at 50 MPa for 10 minutes. The…”
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Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation by Goodman, S.A, Auret, F.D, Myburg, G, Legodi, M.J, Gibart, P, Beaumont, B

“…We have used deep level transient spectroscopy (DLTS) to investigate the electron trap defects introduced in n-GaN grown, using the epitaxial lateral…”
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Electron traps created in n-type GaN during 25 keV hydrogen implantation by Auret, F.D, Meyer, W.E, Goodman, S.A, Hayes, M, Legodi, M.J, Beaumont, B, Gibart, P

“…We have implanted Ni/n-GaN Schottky contacts with 25 keV hydrogen ions (protons). The defects, thus, introduced were studied using deep level transient…”
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Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons by Auret, F.D, Goodman, S.A, Hayes, M, Legodi, M.J, Hullavarad, S.S, Friedland, E, Beaumont, B, Gibart, P

“…Using deep-level transient spectroscopy (DLTS), we have found that 1 MeV proton bombardment introduces the ER3, nitrogen vacancy related defect, at a rate of…”
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Dopant-related metastable defects in particle irradiated n-GaAs by Legodi, M.J, Auret, F.D, Goodman, S.A

“…We show using deep-level transient spectroscopy (DLTS) that particle irradiation of GaAs:Si and GaAs:S introduces a defect Eα3 and a new defect EαIR10,…”
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Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation by LEGODI, M. J, AURET, F. D, GOODMAN, S. A

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Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation by Auret, F.D, Goodman, S.A, Legodi, M.J, Meyer, W.E

“…We have employed deep level transient spectroscopy (DLTS) to study the electrical properties of 5.4-MeV He-ion irradiation induced electron traps, ER3–ER5, in…”
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Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs by Legodi, M.J., Auret, F.D., Goodman, S.A., Malherbe, J.B.

“…Schottky barrier height modification (BHM) resulting from 0.5 keV He-ion bombardment of n- and p-GaAs (doping ∼10 16 cm −3) is investigated for doses between 5…”
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Electrical characterization of as-grown and particle irradiated n-type bulk ZnO by Auret, F.D., Hayes, M., Meyer, W.E., Nel, J.M., Wu, L., Legodi, M.J.

“…Nickel oxide/ZnO structures and Ru Schottky barrier diodes (SBDs) on ZnO were used as rectifying contacts to study defects in ZnO by deep level transient…”
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Electron irradiation induced defects in n-GaN by Goodman, S.A., Auret, F.D., Legodi, M.J., Myburg, G., Beaumont, B., Gibart, P.

“…Irradiation by high energy gamma rays or electrons is particularly effective in introducing point defects-the simplest of all defects, it provides a convenient…”
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