Search Results - "Leem, Dong‐Seok"
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Organic Upconversion Imager with Dual Electronic and Optical Readouts for Shortwave Infrared Light Detection
Published in Advanced functional materials (01-04-2021)“…There remains a critical need for large‐area imaging technologies that operate in the shortwave infrared spectral region. Upconversion imagers that combine…”
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Efficient Organic Solar Cells with Solution-Processed Silver Nanowire Electrodes
Published in Advanced materials (Weinheim) (11-10-2011)“…An effective method for reducing interelectrode shorting in silver nanowire (AgNW) based organic solar cells is reported. The method is applied to standard and…”
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High Performance Shortwave Infrared Organic Photodetectors Adopting Thiadiazole Quinoxaline‐Based Copolymers
Published in Advanced optical materials (01-10-2022)“…Detection of light in the near‐infrared (NIR) and shortwave infrared (SWIR) spectral range is essential for the wide practical applications of biometrics,…”
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Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
Published in Npj flexible electronics (29-04-2020)“…To achieve high detectivity in infrared detectors, it is critical to reduce the device noise. However, for non-crystalline semiconductors, an essential…”
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Highly Responsive and Thermally Reliable Near‐Infrared Organic Photodiodes Utilizing Naphthalocyanine Molecules Tuned with Axial Ligands
Published in Advanced optical materials (01-02-2021)“…Achieving high‐performance near‐infrared (NIR) photodiodes is in great demand for potential applications like biometrics, security, artificial vision,…”
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Narrow-Band Organic Photodiodes for High-Resolution Imaging
Published in ACS applied materials & interfaces (05-10-2016)“…There are growing opportunities and demands for image sensors that produce higher-resolution images, even in low-light conditions. Increasing the light input…”
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Investigation of a Conjugated Polyelectrolyte Interlayer for Inverted Polymer:Fullerene Solar Cells
Published in Advanced energy materials (01-06-2013)“…Inverted bulk heterojunction solar cells are fabricated using a conjugated polyelectrolyte (PFN) as a cathode interlayer. Enhanced photovoltaic performance is…”
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Effectiveness of p -dopants in an organic hole transporting material
Published in Applied physics letters (23-03-2009)“…We investigated the effectiveness of p -dopants to generate holes in a hole transporting material by comparing the absorption in visible-near-infrared and…”
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Highly efficient tandem p - i - n organic light-emitting diodes adopting a low temperature evaporated rhenium oxide interconnecting layer
Published in Applied physics letters (08-09-2008)“…High quality interconnection units (ICUs) with a high transparency and superior charge gen erating capability for tandem organic light-emitting diodes (OLEDs)…”
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Morphology- and Orientation-Controlled Gallium Arsenide Nanowires on Silicon Substrates
Published in Nano letters (01-01-2007)“…GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor−liquid−solid (VLS) growth in a solid source molecular beam…”
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Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts
Published in IEEE photonics technology letters (01-02-2005)“…We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1…”
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Reduced Graphene Oxide Electrodes for Large Area Organic Electronics
Published in Advanced materials (Weinheim) (05-04-2011)Get full text
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Solution-processable infrared photodetectors: Materials, device physics, and applications
Published in Materials science & engineering. R, Reports : a review journal (01-10-2021)“…This review is written to introduce infrared photon detectors based on solution-processable semiconductors. A new generation of solution-processable photon…”
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14
Rapid Patterning of Single-Wall Carbon Nanotubes by Interlayer Lithography
Published in Small (Weinheim an der Bergstrasse, Germany) (22-11-2010)“…High resolution patterning of single‐wall carbon nanotubes is achieved using interlayer lithography. Minimum feature sizes of 6 and 0.7 μm are demonstrated on…”
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Amount of retained austenite at room temperature after reverse transformation of martensite to austenite in an Fe–13%Cr–7%Ni–3%Si martensitic stainless steel
Published in Scripta materialia (10-10-2001)“…Below a heating rate of 10°C/s, the reverse transformation (α ′→γ) of a low carbon Fe–13%Cr–7%Ni–3%Si martensitic stainless steel occurs by diffusion, whereas…”
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Formation of low resistance and transparent ohmic contacts to p -type GaN using Ni–Mg solid solution
Published in Applied physics letters (27-10-2003)“…We report on the formation of Ni–Mg solid solution/Au ohmic contacts on p-GaN (5×1017 cm−3). The as-deposited Ni–Mg solid solution (8 nm)/Au (8 nm) contact…”
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Contribution of Sub-Gap States to Broadband Infrared Response in Organic Bulk Heterojunctions
Published in ACS applied materials & interfaces (30-11-2022)“…This work studied a series of infrared detectors comprised of organic bulk heterojunctions to explain the origin of their broadband spectral response from the…”
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Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes
Published in Applied physics letters (15-12-2003)“…We have investigated a Zn–Ni solid solution/Ag scheme for use in producing high-quality ohmic contacts for flip-chip light-emitting diodes (LEDs). The…”
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Green-Light-Selective Organic Photodiodes with High Detectivity for CMOS Color Image Sensors
Published in ACS applied materials & interfaces (18-11-2020)“…Stacked structures employing wavelength-selective organic photodiodes (OPDs) have been studied as promising alternatives to the conventional Si-based image…”
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Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes
Published in IEEE photonics technology letters (01-06-2004)“…We have investigated an Mg-doped In/sub x/O/sub y/(MIO)-Ag scheme for the formation of high-quality ohmic contacts to p-type GaN for flip-chip light-emitting…”
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