Compact modeling solution of layout dependent effect for FinFET technology

We successfully developed and verified a complete compact model solution for layout dependent effect (LDE) of FinFET technology. LDE has significant impact on the device performances mainly due to the application of stressors and aggressive device scaling. With LDE, performance degradation may be up...

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Bibliographic Details
Published in:	Proceedings of the 2015 International Conference on Microelectronic Test Structures pp. 110 - 115
Main Authors:	Chen, David C., Lin, Guan Shyan, Lee, Tien Hua, Lee, Ryan, Liu, Y C, Wang, Meng Fan, Cheng, Yi Ching, Wu, D. Y.
Format:	Conference Proceeding Journal Article
Language:	English
Published:	IEEE 01-03-2015
Subjects:	Boundaries Circuits Conferences Devices Diffusion FinFETs Layout Logic gates Mathematical model Mathematical models Metals MOSFET circuits Nondestructive testing Performance evaluation Proximity effect (electricity)
Online Access:	Get full text
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Summary:	We successfully developed and verified a complete compact model solution for layout dependent effect (LDE) of FinFET technology. LDE has significant impact on the device performances mainly due to the application of stressors and aggressive device scaling. With LDE, performance degradation may be up to 10% or more. In this work, compact model solution for Length of Oxidation (LOD), Well Proximity Effect (WPE), Neighboring Diffusion Effect (NDE), Metal Boundary Effect (MBE), and Gate Line End Effect (GLE) were delivered. This solution was implemented successfully in BSIM-CMG for efficient circuit simulation.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Conference-1 ObjectType-Feature-3 content type line 23 SourceType-Conference Papers & Proceedings-2
ISBN:	1479983020 9781479983025
ISSN:	1071-9032 2158-1029
DOI:	10.1109/ICMTS.2015.7106119