Search Results - "Lee, Taeran"
-
1
High-Efficiency WSe2 Photovoltaic Devices with Electron-Selective Contacts
Published in ACS nano (28-06-2022)“…A rapid surge in global energy consumption has led to a greater demand for renewable energy to overcome energy resource limitations and environmental problems…”
Get full text
Journal Article -
2
Two‐Dimensional MXene Synapse for Brain‐Inspired Neuromorphic Computing
Published in Small (Weinheim an der Bergstrasse, Germany) (01-08-2021)“…MXenes, an emerging class of two‐dimensional (2D) transition metal carbides and nitrides, have attracted wide attention because of their fascinating properties…”
Get full text
Journal Article -
3
A Van Der Waals Reconfigurable Multi‐Valued Logic Device and Circuit Based on Tunable Negative‐Differential‐Resistance Phenomenon
Published in Advanced materials (Weinheim) (01-09-2022)“…Multi‐valued logic (MVL) technology that utilizes more than two logic states has recently been reconsidered because of the demand for greater power saving in…”
Get full text
Journal Article -
4
High-Efficiency WSe 2 Photovoltaic Devices with Electron-Selective Contacts
Published in ACS nano (28-06-2022)“…A rapid surge in global energy consumption has led to a greater demand for renewable energy to overcome energy resource limitations and environmental problems…”
Get full text
Journal Article -
5
Junctionless Negative‐Differential‐Resistance Device Using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel Computing
Published in Advanced materials (Weinheim) (01-06-2024)“…Negative‐differential‐resistance (NDR) devices offer a promising pathway for developing future computing technologies characterized by exceptionally low energy…”
Get full text
Journal Article -
6
A Van Der Waals Reconfigurable Multi‐Valued Logic Device and Circuit Based on Tunable Negative‐Differential‐Resistance Phenomenon (Adv. Mater. 36/2022)
Published in Advanced materials (Weinheim) (01-09-2022)“…Negative Differential Resistance In article number 2202799, a reconfigurable, multiple negative differential resistance (m‐NDR) device, which features…”
Get full text
Journal Article -
7
WSe2 Field-effect Transistor with Electron-beam-induced W-shaped IV Characteristic and its Application to a Ternary NAND Gate
Published in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (07-03-2023)“…We report WSe 2 homojunction-based field-effect transistors (FETs) with W-shaped transfer IV characteristics, enabled by area-selective tailoring of the WSe 2…”
Get full text
Conference Proceeding