Search Results - "Lee, Seounghoon"

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  1. 1
    Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

    Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells by Kim, Jinbum, Park, Taejin, Lee, Seounghoon, Lee, Siyoung, Kim, Chulsung, Hyun, Sangjin, Kim, Yihwan, Hwang, Kihyun, Kim, Hyoungsub

    Published in IEEE transactions on electron devices (01-01-2019)
    “…The importance of optimizing the millisecond annealing (MSA) temperature for Pt-doped NiSi (<inline-formula> <tex-math notation="LaTeX">{\mathrm…”
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  2. 2
    Effect of Millisecond Annealing Temperature of Ni1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

    Effect of Millisecond Annealing Temperature of Ni1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells by Kim, Jinbum, Park, Taejin, Lee, Seounghoon, Lee, Siyoung, Kim, Chulsung, Hyun, Sangjin, Kim, Yihwan, Hwang, Kihyun, Kim, Hyoungsub

    Published in IEEE transactions on electron devices (01-01-2019)
    “…The importance of optimizing the millisecond annealing (MSA) temperature for Pt-doped NiSi ([Formula Omitted]Pt x Si) contact formation was highlighted by…”
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  3. 3
    Effect of Millisecond Annealing Temperature of Ni 1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

    Effect of Millisecond Annealing Temperature of Ni 1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells by Kim, Jinbum, Park, Taejin, Lee, Seounghoon, Lee, Siyoung, Kim, Chulsung, Hyun, Sangjin, Kim, Yihwan, Hwang, Kihyun, Kim, Hyoungsub

    Published in IEEE transactions on electron devices (01-01-2019)
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