Search Results - "Lee, R. T. P."

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide by Lee, R.T.P., Lim, A.E.-J., Kian-Ming Tan, Tsung-Yang Liow, Guo-Qiang Lo, Samudra, G.S., Dong Zhi Chi, Yee-Chia Yeo

“…We have fabricated n-channel 25-nm gate length FinFETs with Schottky-barrier source and drain featuring a self-aligned ytterbium silicide (YbSi 1.8 ). A…”
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Addressing materials and integration issues for NiSi silicide contact metallization in nano-scale CMOS devices by Chi, D.Z., Lee, R.T.P., Wong, A.S.W.

“…As the industry approaches sub-100 nm technology nodes, the trend is to replace cobalt silicide with nickel monosilicide (NiSi) since the use of NiSi for…”
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Enhanced morphological stability of NiGe films formed using Ni(Zr) alloy by Liew, S.L., Lee, R.T.P., Lee, K.Y., Balakrisnan, B., Chow, S.Y., Lai, M.Y., Chi, D.Z.

“…A process to stabilise the formation of NiGe using Zr alloying engineering approach was investigated. The NiGe film maintained continuity up to 600 °C with…”
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Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance by Lee, R.T.-P., Lim, A.E.-J., Kian-Ming Tan, Tsung-Yang Liow, Dong Zhi Chi, Yee-Chia Yeo

“…In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height (Phi B N ) of 110 meV for platinum-based silicide contacts…”
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10 nm nominal channel length MoS2 FETs with EOT 2.5 nm and 0.52 mA/µm drain current by Yang, L., Lee, R. T. P., Papa Rao, S. S., Tsai, W., Ye, P. D.

“…Summary form only given. In this abstract, multi-layer MoS 2 field-effect transistors (FET) [1] with record short 10 nm nominal channel length (L ch ) and…”
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The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors by Lee, R., Koh, A.T.-Y., Kian-Ming Tan, Tsung-Yang Liow, Dong Zhi Chi, Yee-Chia Yeo

“…We clarify the role of carbon and dysprosium in nickel-dysprosium-silicide (Ni[Dy]Si:C) contacts formed on silicon:carbon (Si 1- yCy or Si:C) for…”
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Ultra High-Stress Liner Comprising Diamond-Like Carbon for Performance Enhancement of p-Channel Multiple-Gate Transistors by Kian-Ming Tan, Mingchu Yang, Tsung-Yang Liow, Lee, R.T.P., Yee-Chia Yeo

“…We report the demonstration of strained p-channel multiple-gate transistors or FinFETs with a novel liner-stressor material comprising diamond-like carbon…”
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300mm wafer level sulfur monolayer doping for III-V materials by Loh, W.-Y, Lee, R. T. P., Tieckelmann, R., Orzali, T., Sapp, B., Hobbs, C., Papa Rao, S. S., Fuse, K., Sato, M., Fujiwara, N., Chang, L., Uchida, H.

“…We have demonstrated sulfur monolayer doping (MLD) of In(53%)GaAs on III-V buffer/Si substrate at 300mm wafer scale and obtained sheet resistance of 303…”
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Drive-Current Enhancement in FinFETs Using Gate-Induced Stress by Kian-Ming Tan, Tsung-Yang Liow, Lee, R.T.P., Chih-Hang Tung, Samudra, G.S., Won-Jong Yoo, Yee-Chia Yeo

“…A novel and simple process for the exploitation of metal-gate-induced stress in the Si channel region of a FinFET is reported. TaN metal-gate electrode was…”
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Challenges of III-V materials in advanced CMOS logic by Kirsch, P. D., Hill, R. J. W., Huang, J., Loh, W. Y., Kim, T.-W, Wong, M. H., Min, B. G., Huffman, C., Veksler, D., Young, C. D., Ang, K. W., Ali, I., Lee, R. T. P., Ngai, T., Wang, A., Wang, W.-E, Cunningham, T. H., Chen, Y. T., Hung, P. Y., Bersch, E., Sassman, B., Cruz, M., Trammell, S., Droopad, R., Oktybrysky, S., Lee, J. C., Bersuker, G., Hobbs, C., Jammy, R.

“…The superior transport properties of III-V materials are promising candidates to achieve improved performance at low power. This paper examines the module…”
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Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With SiliconaGermanium Source and Drain by Tan, Kian-Ming, Yang, Mingchu, Fang, Wei-Wei, Lim, AE-J, Lee, RT-P, Liow, Tsung-Yang, Yeo, Yee-Chia

“…We report the first investigation of the impact of diamond-like carbon (DLC) high-stress liner on strained p-channel metal-oxide-semiconductor field-effect…”
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Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors by Kian-Ming Tan, Wei-Wei Fang, Mingchu Yang, Tsung-Yang Liow, Lee, R.T.-P., Balasubramanian, N., Yee-Chia Yeo

“…We report the first demonstration of a p-channel multiple-gate (trigate) FinFET with a liner stressor comprising diamond-like carbon (DLC) film. We also report…”
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Feasibility and Test-Retest Reliability of an Electroencephalography-Based Brain Mapping System in Children With Cerebral Palsy: A Preliminary Investigation by Lee, Nam G., PT, MS, Kang, Sung K., PT, Lee, Dong R., PT, MS, Hwang, Han J., MS, Jung, Ji H., PT, MS, You, Joshua (Sung) H., PT, PhD, Im, Chang H., PhD, Kim, Dong A., MD, PhD, Lee, Jung A., PT, PhD, Kim, Ki S., MS

“…Abstract Lee NG, Kang SK, Lee DR, Hwang HJ, Jung JH, You JH, Im CH, Kim DA, Lee JA, Kim KS. Feasibility and test-retest reliability of an…”
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ETB-QW InAs MOSFET with scaled body for improved electrostatics by Kim, T.-W, Kim, D., Koh, D.-H, Hill, R. J. W., Lee, R. T. P., Wong, M. H., Cunningham, T., del Alamo, J. A., Banerjee, S. K., Oktyabrsky, S., Greene, A., Ohsawa, Y., Trickett, Y., Nakamura, G., Li, Q., Lau, K. M., Hobbs, C., Kirsch, P. D., Jammy, R.

“…This paper reports Extremely-Thin-Body (ETB) InAs quantum-well (QW) MOSFETs with improved electrostatics down to L g = 50 nm (S =103 mV/dec, DIBL = 73 mV/V)…”
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Positive Bias Instability and Recovery in InGaAs Channel nMOSFETs by Deora, S., Bersuker, G., Loh, W.-Y, Veksler, D., Matthews, K., Kim, T. W., Lee, R. T. P., Hill, R. J. W., Kim, D.-H, Wang, W.-E, Hobbs, C., Kirsch, P. D.

“…Instability of InGaAs channel nMOSFETs with the Al 2 O 3 / ZrO 2 gate stack under positive bias stress demonstrates recoverable and unrecoverable components,…”
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Report on and analysis of the first credential examination on critical care nursing by Chao, Y F, Lee, R P

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