Search Results - "Lee, Joo In"

Refine Results
  1. 1

    Thermal annealing effects of MBE-seed-layers on properties of ZnO nanorods grown by hydrothermal method by Su Kim, Min, Gug Yim, Kwang, Young Choi, Hyun, Young Cho, Min, Sik Kim, Ghun, Min Jeon, Su, Lee, Dong-Yul, Soo Kim, Jin, Su Kim, Jong, Son, Jeong-Sik, In Lee, Joo, Leem, Jae-Young

    Published in Journal of crystal growth (01-07-2011)
    “…ZnO nanorods on seed-layers were grown by the hydrothermal method. The seed-layers were grown by plasma-assisted molecular beam epitaxy (PA-MBE) and then…”
    Get full text
    Journal Article Conference Proceeding
  2. 2

    Facile preparation of ZnO nanosheets and its photocatalytic activity in the degradation of rhodamine B dye under UV irradiation by Khan, Rizwan, Raj, Sudarsan, Yun, Jin Hyeon, Yu, Yeon-Tae, Lee, Joo In, Lee, In-Hwan

    Published in Electronic materials letters (01-11-2016)
    “…We have successfully synthesized high crystalline quality ZnO nanosheets (NSs) structures by a hydrothermal process. The detailed characterizations have shown…”
    Get full text
    Journal Article
  3. 3

    Influence of excitation wavelength on photoluminescence properties of CdSe/CdZnS colloidal quantum dots on micro-patterned silver films by Khan, Rizwan, Jeon, Ju-Won, Jang, Lee-Woon, Kim, Min-Kyu, Ko, Eun-Yee, Lee, Joo-In, Lee, In-Hwan

    Published in Electronic materials letters (01-03-2014)
    “…We examined the excitation wavelength dependence of photoluminescence (PL) property in CdSe/CdZnS colloidal quantum dots (QDs) on micro-patterned silver (Ag)…”
    Get full text
    Journal Article
  4. 4

    Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma by Kim, Min Su, Kim, Tae Hoon, Kim, Do Yeob, Kim, Ghun Sik, Choi, Hyun Young, Cho, Min Young, Jeon, Su Min, Kim, Jong Su, Kim, Jin Soo, Lee, D.Y., Son, J.S., Lee, Joo In, Kim, Jin Ha, Kim, Eundo, Hwang, Do-Weon, Leem, J.Y.

    Published in Journal of crystal growth (01-07-2009)
    “…ZnO epitaxial layers with treated low-temperature (LT) ZnO buffer layers were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on p-type Si (1 0 0)…”
    Get full text
    Journal Article
  5. 5

    Free exciton transitions and varshni's coefficients for GaN epitaxial layers grown by horizontal lp-mocvd by Kasi Viswanath, Annamraju, In Lee, Joo, Lee, C.R., Leem, J.Y., Kim, Dongho

    Published in Solid state communications (16-10-1998)
    “…We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic…”
    Get full text
    Journal Article
  6. 6

    Study of Chirped Quantum Dot Superluminescent Diodes by Han, Il Ki, Bae, Hyung Cheol, Cho, Woon Jo, Lee, Jung Il, Park, Hong Lee, Kim, Tae Geun, Lee, Joo In

    Published in Japanese Journal of Applied Physics (01-07-2005)
    “…Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a…”
    Get full text
    Journal Article
  7. 7

    Growth of Si-doped InAs quantum dots and annealing effects on size distribution by Kim, Jin Soo, Yu, Phil Won, Leem, Jae-Young, Lee, Joo In, Noh, Sam Kyu, Kim, Jong Su, Kim, Gu Hyun, Kang, Se-Kyung, Ban, Seung Il, Kim, Song Gang, Jang, Yu Dong, Lee, Uk Hyun, Yim, Jung Soon, Lee, Donghan

    Published in Journal of crystal growth (2002)
    “…We investigated the Si-doped InAs quantum dots (QDs) grown by molecular beam epitaxy and the annealing effects on the QD size distribution through…”
    Get full text
    Journal Article
  8. 8

    Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer by Ju, Jin-Woo, Lee, Joo In, Lee, In-Hwan

    Published in Thin solid films (05-12-2006)
    “…We investigated the effects of low-temperature deposited thin InN buffer layer on the material characteristics of the InN epitaxial films grown on a thick…”
    Get full text
    Journal Article
  9. 9

    Three-Modal Size Distribution of Self-assembled InAs Quantum Dots by Lee, Chang-Myung, Choi, Suk-Ho, Noh, Sam-Kyu, Lee, Joo In, Kim, Jin-Soo, Han, Il-Ki

    Published in Japanese Journal of Applied Physics (01-04-2005)
    “…We report a photoluminescence study of self-assembled InAs/GaAs quantum dots (QDs) in which excitation intensity and temperature were varied. The…”
    Get full text
    Journal Article
  10. 10

    UV Spectroscopic Monitoring of Vaporized Monoaromatic Hydrocarbons from Petroleum-Contaminated Soils by Kim, Woo Jin, Lee, Joo In, Lee, Seockhun, Ahn, Kyu-Hong, Park, Jae-Woo

    Published in Environmental monitoring and assessment (01-09-2006)
    “…Fast and simple systems using ultraviolet (UV) absorbance were examined for on-line monitoring of monoaromatic hydrocarbons from petroleum-contaminated soils…”
    Get full text
    Journal Article
  11. 11

    Shape-dependent optical properties of self-assembled InAs/GaAs quantum dots by Kim, Jin Soo, Lee, Cheul-Ro, Lee, Joo In, Leem, Jae-Young

    Published in Journal of crystal growth (15-03-2006)
    “…Self-assembled InAs quantum dots (QDs) covered by an In 0.15Ga 0.85As layer with two different thicknesses were, respectively, grown on GaAs(0 0 1) substrates…”
    Get full text
    Journal Article
  12. 12

    Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy by Kim, Jin Soo, Oh, Dae Kon, Yu, Phil Won, Leem, Jae-Young, Lee, Joo In, Lee, Cheul-Ro

    Published in Journal of crystal growth (15-01-2004)
    “…Self-assembled InAs quantum dots (QDs) with In 0.15Ga 0.85As were grown by a molecular beam epitaxy and their optical properties were investigated by…”
    Get full text
    Journal Article
  13. 13

    Thickness-dependent magnetic domain structures of Co ultra-thin film investigated by scanning transmission X-ray microscopy by Yoon, Ji-Soo, Kim, Namdong, Moon, Kyoung-Woong, Lee, Joo In, Kim, Jae-Sung, Shin, Hyun-Joon, Kim, Wondong

    Published in Current applied physics (01-11-2018)
    “…Thickness-dependent magnetic domain structure of ultrathin Co wedge films (0.3 nm–1.0 nm) sandwiched by Pt layers was investigated by scanning transmission…”
    Get full text
    Journal Article
  14. 14

    Characteristics of Si-doped GaN compensated with Mg by Leem, Jae-Young, Lee, Cheul-Ro, Lee, Joo-In, Kyu Noh, Sam, Kwon, Young-Soo, Ryu, Yeun-Hee, Son, Sung-Jin

    Published in Journal of crystal growth (01-10-1998)
    “…We have investigated the effect of Si–Mg codoping on the yellow luminescence. The codoped GaN films with GaN buffer layers were grown by introducing various…”
    Get full text
    Journal Article
  15. 15

    Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: renormalization and screening by In Lee, Joo, Gyoo Lee, Hyung, Shin, Eun-joo, Yu, Sungkyu, Viswanath, Kasi, Kim, Dongho, Ihm, Gukhyung

    “…We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the…”
    Get full text
    Journal Article Conference Proceeding
  16. 16

    Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures by Young Chae Yoo, Il Ki Han, Jung Il Lee, Joo In Lee, Eun Kyu Kim

    “…In this paper, the trench structure of J-shaped superluminescent diodes (SLDs) was utilized in order to avoid optical power loss with week index waveguides…”
    Get full text
    Conference Proceeding
  17. 17

    Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy by Kim, Gu Hyun, Choi, Jung Bum, Leem, Jae-Young, Lee, Joo In, Noh, Sam Kyu, Kim, Jong Su, Kim, Jin Soo, Kang, Se-Kyung, Ban, Seung Il

    Published in Journal of crystal growth (2002)
    “…InAs epilayers with thicknesses of 400, 500, 750, and 1500 nm were grown on GaAs by molecular beam epitaxy and their properties were investigated by reflection…”
    Get full text
    Journal Article
  18. 18
  19. 19

    Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer by Jung, Soon Il, Yun, Ilgu, Lee, Chang Myung, Lee, Joo In

    Published in Current applied physics (01-09-2009)
    “…InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal–organic chemical vapor deposition and…”
    Get full text
    Journal Article
  20. 20

    Magneto-optical spectroscopy of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells by Lee, Joo In, Viswanath, Annamratu Kasi, Yu, Sungkyu, Shin, Eun-Joo, Lee, Kyu-Seok, Lee, Hyung Gyoo, Ihm, Gukhyung

    Published in Solid state communications (01-01-1999)
    “…We have presented the magneto-optical studies of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells. The transition energies of two…”
    Get full text
    Journal Article