Search Results - "Lee, Joo In"
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Thermal annealing effects of MBE-seed-layers on properties of ZnO nanorods grown by hydrothermal method
Published in Journal of crystal growth (01-07-2011)“…ZnO nanorods on seed-layers were grown by the hydrothermal method. The seed-layers were grown by plasma-assisted molecular beam epitaxy (PA-MBE) and then…”
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Journal Article Conference Proceeding -
2
Facile preparation of ZnO nanosheets and its photocatalytic activity in the degradation of rhodamine B dye under UV irradiation
Published in Electronic materials letters (01-11-2016)“…We have successfully synthesized high crystalline quality ZnO nanosheets (NSs) structures by a hydrothermal process. The detailed characterizations have shown…”
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3
Influence of excitation wavelength on photoluminescence properties of CdSe/CdZnS colloidal quantum dots on micro-patterned silver films
Published in Electronic materials letters (01-03-2014)“…We examined the excitation wavelength dependence of photoluminescence (PL) property in CdSe/CdZnS colloidal quantum dots (QDs) on micro-patterned silver (Ag)…”
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4
Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma
Published in Journal of crystal growth (01-07-2009)“…ZnO epitaxial layers with treated low-temperature (LT) ZnO buffer layers were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on p-type Si (1 0 0)…”
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5
Free exciton transitions and varshni's coefficients for GaN epitaxial layers grown by horizontal lp-mocvd
Published in Solid state communications (16-10-1998)“…We have studied the photoluminescence properties of undoped epitaxial layers of GaN on sapphire substrate grown by horizontal low pressure metal organic…”
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6
Study of Chirped Quantum Dot Superluminescent Diodes
Published in Japanese Journal of Applied Physics (01-07-2005)“…Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a…”
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7
Growth of Si-doped InAs quantum dots and annealing effects on size distribution
Published in Journal of crystal growth (2002)“…We investigated the Si-doped InAs quantum dots (QDs) grown by molecular beam epitaxy and the annealing effects on the QD size distribution through…”
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Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer
Published in Thin solid films (05-12-2006)“…We investigated the effects of low-temperature deposited thin InN buffer layer on the material characteristics of the InN epitaxial films grown on a thick…”
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9
Three-Modal Size Distribution of Self-assembled InAs Quantum Dots
Published in Japanese Journal of Applied Physics (01-04-2005)“…We report a photoluminescence study of self-assembled InAs/GaAs quantum dots (QDs) in which excitation intensity and temperature were varied. The…”
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10
UV Spectroscopic Monitoring of Vaporized Monoaromatic Hydrocarbons from Petroleum-Contaminated Soils
Published in Environmental monitoring and assessment (01-09-2006)“…Fast and simple systems using ultraviolet (UV) absorbance were examined for on-line monitoring of monoaromatic hydrocarbons from petroleum-contaminated soils…”
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11
Shape-dependent optical properties of self-assembled InAs/GaAs quantum dots
Published in Journal of crystal growth (15-03-2006)“…Self-assembled InAs quantum dots (QDs) covered by an In 0.15Ga 0.85As layer with two different thicknesses were, respectively, grown on GaAs(0 0 1) substrates…”
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12
Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy
Published in Journal of crystal growth (15-01-2004)“…Self-assembled InAs quantum dots (QDs) with In 0.15Ga 0.85As were grown by a molecular beam epitaxy and their optical properties were investigated by…”
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13
Thickness-dependent magnetic domain structures of Co ultra-thin film investigated by scanning transmission X-ray microscopy
Published in Current applied physics (01-11-2018)“…Thickness-dependent magnetic domain structure of ultrathin Co wedge films (0.3 nm–1.0 nm) sandwiched by Pt layers was investigated by scanning transmission…”
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14
Characteristics of Si-doped GaN compensated with Mg
Published in Journal of crystal growth (01-10-1998)“…We have investigated the effect of Si–Mg codoping on the yellow luminescence. The codoped GaN films with GaN buffer layers were grown by introducing various…”
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15
Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: renormalization and screening
Published in Materials science & engineering. B, Solid-state materials for advanced technology (27-02-1998)“…We present the optical properties of modulation-doped InAs/GaAs quantum dots (QDs). Bandgap renormalization is clearly observed from a red shift of the…”
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Journal Article Conference Proceeding -
16
Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures
Published in 2009 International Semiconductor Device Research Symposium (01-12-2009)“…In this paper, the trench structure of J-shaped superluminescent diodes (SLDs) was utilized in order to avoid optical power loss with week index waveguides…”
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Conference Proceeding -
17
Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy
Published in Journal of crystal growth (2002)“…InAs epilayers with thicknesses of 400, 500, 750, and 1500 nm were grown on GaAs by molecular beam epitaxy and their properties were investigated by reflection…”
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18
Erratum to: Size tunability and optical properties of CdSe quantum dots for various growth conditions
Published in Journal of the Korean Physical Society (01-05-2013)Get full text
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19
Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer
Published in Current applied physics (01-09-2009)“…InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal–organic chemical vapor deposition and…”
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20
Magneto-optical spectroscopy of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells
Published in Solid state communications (01-01-1999)“…We have presented the magneto-optical studies of modulation-doped GaAs/AlGaAs asymmetric coupled double quantum wells. The transition energies of two…”
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