Search Results - "Lee, Gyeongyeop"

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  1. 1
    Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects

    Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects by Bang, Minji, Ha, Jonghyeon, Lee, Gyeongyeop, Suh, Minki, Kim, Jungsik

    Published in Micromachines (Basel) (22-05-2023)
    “…We comprehensively investigate displacement-defect-induced current and static noise margin variations in six-transistor (6T) static random access memory (SRAM)…”
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  2. 2
    Overhang Saddle Fin Sidewall Structure for Highly Reliable DRAM Operation

    Overhang Saddle Fin Sidewall Structure for Highly Reliable DRAM Operation by Han, Jin-Woo, Suh, Minki, Lee, Gyeongyeop, Kim, Jungsik

    Published in IEEE access (2023)
    “…A novel memory cell transistor structure based on a saddle fin-based DRAM is presented for highly reliable operations. The overhang saddle fin (oss-fin) active…”
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  3. 3
    Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects

    Investigation Into the Degradation of DDR4 DRAM Owing to Total Ionizing Dose Effects by Lee, Gyeongyeop, Suh, Minki, Ryu, Minsang, Lee, Yunjong, Han, Jin-Woo, Kim, Jungsik

    Published in IEEE access (2023)
    “…Total ionizing dose (TID) effects of gamma rays were investigated on DDR4 dynamic random access memory (DRAM) and analyzed using TCAD simulations. In this…”
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  4. 4
    Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors

    Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors by Lee, Gyeongyeop, Ha, Jonghyeon, Kim, Kihyun, Bae, Hagyoul, Kim, Chong-Eun, Kim, Jungsik

    Published in Micromachines (Basel) (01-06-2022)
    “…The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology…”
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  5. 5
    Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory

    Impact of Displacement Defect Owing to Cosmic Rays on Three-Nanometer-Node Nanosheet FET 6T Static Random Access Memory by Ha, Jonghyeon, Bang, Minji, Lee, Gyeongyeop, Suh, Minki, Kim, Chong-Eun, Kim, Jungsik

    Published in IEEE access (2023)
    “…In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T) static random access memory (SRAM) with a 3 nm node nanosheet…”
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  6. 6
    On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET

    On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET by Ha, Jonghyeon, Lee, Gyeongyeop, Bae, Hagyoul, Kim, Kihyun, Han, Jin-Woo, Kim, Jungsik

    Published in Micromachines (Basel) (01-08-2022)
    “…Silicon displacement defects are caused by various effects. For instance, epitaxial crystalline silicon growth and ion implantation often result in defects…”
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  7. 7
    Prediction of Statistical Distribution on Nanosheet FET by Geometrical Variability Using Various Machine Learning Models

    Prediction of Statistical Distribution on Nanosheet FET by Geometrical Variability Using Various Machine Learning Models by Ha, Jonghyeon, Kim, Sun Jin, Bang, Minji, Lee, Gyeongyeop, Suh, Minki, Shim, Minseob, Kim, Chong-Eun, Kim, Jungsik

    Published in IEEE access (2023)
    “…Due to the aggressive scaling down of logic semiconductors, the difficulty of semiconductor component processes has increased. As the structure of components…”
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  8. 8
    Machine Learning Approach for Characteristics Prediction of 4H-Silicon Carbide NMOSFET by Process Conditions

    Machine Learning Approach for Characteristics Prediction of 4H-Silicon Carbide NMOSFET by Process Conditions by Ha, Jonghyeon, Lee, Gyeongyeop, Kim, Jungsik

    Published in 2021 IEEE Region 10 Symposium (TENSYMP) (23-08-2021)
    “…In this work, the electrical characteristics with various process conditions in 4H-Silicon Carbide NMOSFET are analyzed by using various machine learning…”
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  9. 9
    Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT)

    Radiation Displacement Defect in SuperJunction Insulated Gate Bipolar Transistor (SJ-IGBT) by Lee, Gyeongyeop, Ha, Jonghyeon, Kim, Jungsik

    Published in 2021 IEEE Region 10 Symposium (TENSYMP) (23-08-2021)
    “…In this work, we report the impact of displacement defect due to radiation effect in the superjunction insulated gate bipolar transistor (SJ-IGBT). Simulations…”
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  10. 10
    Overhang Saddle Fin Sidewall Structure for Highly Reliable DRAM Operation

    Overhang Saddle Fin Sidewall Structure for Highly Reliable DRAM Operation by Han, Jin-Woo, Suh, Minki, Lee, Gyeongyeop, Kim, Jungsik

    Published in Access, IEEE (2023)
    “…A novel memory cell transistor structure based on a saddle fin-based DRAM is presented for highly reliable operations. The overhang saddle fin (oss-fin) active…”
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