Search Results - "Lecourt, Francois"

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate by Altuntas, Philippe, Lecourt, Francois, Cutivet, Adrien, Defrance, Nicolas, Okada, Etienne, Lesecq, Marie, Rennesson, Stephanie, Agboton, Alain, Cordier, Yvon, Hoel, Virginie, De Jaeger, Jean-Claude

“…This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111)…”
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12W, 30% PAE, 40 GHz power amplifier MMIC using a commercially available GaN/Si process by Moron, Joel, Leblanc, Remy, Lecourt, Francois, Frijlink, Peter

“…This paper presents the design and test results of a 40 GHz power amplifier MMIC fabricated with a Gallium Nitride on Silicon (GaN/Si) millimeter wave foundry…”
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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors by Ngo, Thi Huong, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Nemoz, Maud, Vennéguès, Philippe, Damilano, Benjamin, Vézian, Stéphane, Frayssinet, Eric, Cozette, Flavien, Defrance, Nicolas, Lecourt, François, Labat, Nathalie, Maher, Hassan, Cordier, Yvon

“…In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk…”
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Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT by Lecourt, Francois, Agboton, Alain, Ketteniss, Nico, Behmenburg, Hannes, Defrance, Nicolas, Hoel, Virginie, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, De Jaeger, Jean-Claude

“…Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are…”
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Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances by Rennesson, Stephanie, Lecourt, Francois, Defrance, Nicolas, Chmielowska, Magdalena, Chenot, Sebastien, Lesecq, Marie, Hoel, Virginie, Okada, Etienne, Cordier, Yvon, De Jaeger, Jean-Claude

“…In this paper, we propose to optimize Al 0.29 Ga 0.71 N/GaN heterostructures on silicon substrate to obtain high electron mobility transistors featuring…”
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Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology by Albany, Florent, Lecourt, François, Walasiak, Ewa, Defrance, Nicolas, Curutchet, Arnaud, Maher, Hassan, Cordier, Yvon, Labat, Nathalie, Malbert, Nathalie

“…Fluorine ion migration in normally-off AlN/GaN HEMTs fabricated by fluorine ion plasma implantation technology is evidenced. Devices under test are…”
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors by Ngo, Thi Huong, Comyn, Rémi, Chenot, Sébastien, Brault, Julien, Damilano, Benjamin, Vézian, Stéphane, Frayssinet, Eric, Cozette, Flavien, Defrance, Nicolas, Lecourt, François, Labat, Nathalie, Maher, Hassan, Cordier, Yvon

“…•Selective sublimation of p-GaN is developed to fabricate enhancement-mode HEMTs.•AlGaN regrowth drastically reduces access resistances in enhancement-mode…”
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10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100nm GaN/Si process by Gasmi, Ahmed, El Kaamouchi, Majid, Poulain, Julien, Wroblewski, Bertrand, Lecourt, Francois, Dagher, Gulnar, Frijlink, Peter, Leblanc, Remy

“…This paper presents two Monolithic Microwave Integrated Circuits (MMIC) designed and fabricated with the same 100 nm Gallium Nitride on Silicon (GaN/Si)…”
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Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances by Rennesson, S., Lecourt, F., Defrance, N., Chmielowska, M., Chenot, Sébastien, Lesecq, Marie, Hoel, Virginie, Okada, Etienne, Cordier, Y., de Jaeger, Jean-Claude

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6W Ka Band Power Amplifier and 1.2dB NF X-Band Amplifier Using a 100nm GaN/Si Process by Leblanc, Remy, Ibeas, Noelia Santos, Gasmi, Ahmed, Auvray, Francis, Poulain, Julien, Lecourt, Francois, Dagher, Gulnar, Frijlink, Peter

“…This paper presents the measured results of two circuits fabricated with a millimeter wave 100 nm Gallium Nitride on Silicon (GaN/Si) process. The first…”
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Optimization of Al0.29Ga0.71N/GaN High Electron Mobility Heterostructures for High-Power/Frequency Performances : GaN ELECTRONIC DEVICES by RENNESSON, Stephanie, LECOURT, Francois, DEFRANCE, Nicolas, CHMIELOWSKA, Magdalena, CHENOT, Sébastien, LESECQ, Marie, HOEL, Virginie, OKADA, Etienne, CORDIER, Yvon, DE JAEGER, Jean-Claude

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A 10 W, 35 % Power Added Efficiency 6 to 18 GHz GaN Power Amplifier by Gasmi, Ahmed, Leblanc, Remy, Wroblewski, Bertrand, Lecourt, Francois, Poulain, Julien, Cutivet, Adrien, Al Hajjar, Ahmad

“…This paper presents the design and test results of a 6 to 18 GHz power amplifier MMIC fabricated with a Gallium Nitride process, using a reactively matched…”
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Maurice Ohana ou la musique de l'énergie by Lecourt, François

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