Search Results - "Leclercq, J. L."

Symmetry Breaking in Photonic Crystals: On-Demand Dispersion from Flatband to Dirac Cones by Nguyen, H S, Dubois, F, Deschamps, T, Cueff, S, Pardon, A, Leclercq, J-L, Seassal, C, Letartre, X, Viktorovitch, P

“…We demonstrate that symmetry breaking opens a new degree of freedom to tailor energy-momentum dispersion in photonic crystals. Using a general theoretical…”
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Broadband and compact 2-D photonic crystal reflectors with controllable polarization dependence by Boutami, S., Bakir, B.B., Hattori, H., Letartre, X., Leclercq, J.-L., Rojo-Romeo, P., Garrigues, M., Seassal, C., Viktorovitch, P.

“…Two-dimensional (2-D) compact photonic crystal reflectors on suspended InP membranes were studied under normal incidence. We report the first experimental…”
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The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing by Lazar, M., Laariedh, F., Cremillieu, P., Planson, D., Leclercq, J.-L.

“…A strong channeling effect is observed for the ions of Al and N implanted in 4H–SiC due to its crystalline structure. This effect causes difficulties in…”
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Transient thermal conductivity in PECVD SiNx at high temperature: The thermal signature of an on-going irreversible modification by Hadi, M., Pailhès, S., Debord, R., Benamrouche, A., Drouard, E., Gehin, T., Botella, C., Leclercq, J.-L., Noe, P., Fillot, F., Giordano, V.M.

“…[Display omitted] PECVD amorphous silicon nitride (a-SiNx) films are largely used into the dielectric stacks of integrated circuits, as passivation or capping…”
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Electrical characterizations of resistive random access memory devices based on GaV4S8 thin layers by Tranchant, J., Janod, E., Cario, L., Corraze, B., Souchier, E., Leclercq, J.-L., Cremillieu, P., Moreau, P., Besland, M.-P.

“…The Mott insulator compound GaV4S8 exhibits resistive switching (RS) properties under electric pulses which could be used in the domain of data storage for…”
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Ultimate vertical Fabry-Perot cavity based on single-layer photonic crystal mirrors by Boutami, S, Benbakir, B, Letartre, X, Leclercq, J L, Regreny, P, Viktorovitch, P

“…Vertical Fabry Perot cavities (VFPC) have been extensively studied, especially for the realization of vertical-cavity surface emitting lasers (VCSELs). They…”
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Tuneable Dual-Mode Micro-Resonator Associating Photonic Crystal Membrane and Fabry-Perot Cavity by Kusiaku, K., Leclercq, J.-L, Viktorovitch, P., Letartre, X.

“…We report on a tuneable dual-wavelength micro-resonator with a resonant photonic crystal membrane (PCM) inserted in a vertical Fabry-Perot (FP) cavity. Strong…”
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Highly selective and compact tunable MOEMS photonic crystal Fabry-Perot filter by Boutami, S, Ben Bakir, B, Leclercq, J-L, Letartre, X, Rojo-Romeo, P, Garrigues, M, Viktorovitch, P, Sagnes, I, Legratiet, L, Strassner, M

“…The authors report a compact and highly selective tunable filter using a Fabry-Perot resonator combining a bottom micromachined 3-pair-InP/air-gap Bragg…”
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Tunable high-finesse InP/air MOEMS filter by Garrigues, M., Danglot, J., Leclercq, J.-L., Parillaud, O.

“…We have fabricated Fabry-Pe/spl acute/rot tunable filters based on a multi-air-gap/InP suspended structure. High spectral selectivity is achieved by displacing…”
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Switching devices with spatial and spectral resolution combining photonic crystal and MOEMS structures by Letartre, X., Mouette, J., Leclercq, J.L., Rojo Romeo, P., Seassal, C., Viktorovitch, P.

“…One- and two-dimensional photonic crystal slabs have numerous applications in integrated optics. Unfortunately, due to their finite height, their in-plane…”
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Micromachined microwave planar spiral inductors and transformers by Ribas, R.P., Lescot, J., Leclercq, J.-L., Karam, J.M., Ndagijimana, F.

“…A new micromachined planar spiral inductor, with the strips suspended individually, has been fabricated in standard GaAs high electron-mobility transistor…”
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Mechanical design and fabrication of multi-layer indium phosphide freestanding microstructures for a MOEMS microspectrometer by Gil-Sobraques, R., Garrigues, M., Leclercq, J.-L., Parillaud, O.

“…The aim of this paper is to report on the optimization of major technological steps in the fabrication of a micro-opto-electro-mechanical system (MOEMS)…”
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InP bonded membrane photonics components and circuits: toward 2.5 dimensional micro-nano-photonics by Seassal, C., Monat, C., Mouette, J., Touraille, E., Bakir, B.B., Hattori, H.T., Leclercq, J.-L., Letartre, X., Rojo-Romeo, P., Viktorovitch, P.

“…The general objective of this presentation is to demonstrate the great potential of III-V semiconductor -membrane photonic devices, with a special emphasis on…”
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Photonic Crystal-Based MOEMS Devices by Boutami, S., Bakir, B.B., Leclercq, J.-L., Letartre, X., Seassal, C., Rojo-Romeo, P., Regreny, P., Garrigues, M., Viktorovitch, P.

“…In this paper, a new class of microoptoelectromechanical system (MOEMS) devices combining photonic crystals (PCs) formed in in-plane waveguiding membranes…”
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Fabrication of ultrathin and highly flexible InP-based membranes for microoptoelectromechanical systems at 1.55 μm by Strassner, M., Esnault, J.C., Leroy, L., Leclercq, J.-L., Garrigues, M., Sagnes, I.

“…Tunable microcavities have been fabricated to evaluate their tunability in dependence on the membrane thickness. The membrane thickness has been decreased from…”
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Fabrication of ultrathin and highly flexible InP-based membranes for microoptoelectromechanical systems at 1.55 [mu]m by M. Strassner, M. Strassner, J.C. Esnault, J.C. Esnault, L. Leroy, L. Leroy, J.-L. Leclercq, J.-L. Leclercq, M. Garrigues, M. Garrigues, I. Sagnes, I. Sagnes

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III-V Semiconductor based MOEMS devices for optical telecommunications by Garrigues, M., Leclercq, J.L., Viktorovitch, P.

“…The general objective of this presentation is to demonstrate the potential of micro-opto-electro-mechanical system (MOEMS) devices based on III-V semiconductor…”
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Triangular and hexagonal high Q-factor 2-D photonic bandgap cavities on III-V suspended membranes by Pottier, P., Seassal, C., Letartre, X., Leclercq, J.L., Viktorovitch, P., Cassagne, D., Jouanin, C.

“…We demonstrate InP-based triangular and hexagonal two-dimensional (2-D) planar photonic bandgap (PGB) crystal-based microcavities, positioned on a suspended…”
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Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer by Chancerel, F., Regreny, P., Leclercq, J.L., Brottet, S., Volatier, M., Jaouad, A., Darnon, M., Fafard, S., Blanchard, N.P., Gendry, M., Aimez, V.

“…In this work we present a new epitaxial lift-off (ELO) approach based on the use of a strained AlAs/InAlAs superlattice (SL) as sacrificial layer for InP…”
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Realization of a tunable near infra red InP / InGaAs QWs based photodetector integrated in a MOEMS structure for micro-spectrometer applications by Parillaud, O., Huet, O., Decobert, J., Garrigues, M., Gil-Sobraques, R., Leclercq, J.-L.

“…The aim of this paper is to report on the realization of a tunable near infrared InP/GaInAs QWs based photodetector. The device is based on an InGaAs strained…”
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