Search Results - "Leckey, R.C.G"

Structural and electronic properties of graphite layers grown on SiC(0 0 0 1) by Seyller, Th, Emtsev, K.V., Gao, K., Speck, F., Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Rader, O., Varykhalov, A., Shikin, A.M.

“…Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of…”
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Electronic states of an ordered oxide on C-terminated 6H–SiC by Hollering, M., Maier, F., Sieber, N., Stammler, M., Ristein, J., Ley, L., Stampfl, A.P.J., Riley, J.D., Leckey, R.C.G., Leisenberger, F.P., Netzer, F.P.

“…An ordered oxide monolayer with ( 3 × 3 )R30° periodicity was obtained on carbon-terminated 6H–SiC(0001̄) after preparation with a hydrogen microwave plasma…”
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Corrigendum to “An effect of phonon on the electron mean-free-path in ionic crystals”: [ Solid State Communications 116(1) 2000 57–60] by Feng, P.X, Leckey, R.C.G

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Electronic properties of clean unreconstructed 6H–SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy by Emtsev, K.V., Seyller, Th, Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Preuss, M.

“…The properties of the clean and unreconstructed 6H–SiC(0 0 0 1) and 6H–SiC ( 0 0 0 1 ¯ ) surfaces were investigated by means of angle-resolved photoelectron…”
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Surface and bulk properties of GaAs(001) treated by selenium layers by Feng, P.X., Riley, J.D., Leckey, R.C.G., Pigram, P.J., Hollering, M., Ley, L.

“…The surface and bulk properties of GaAs(001) treated by means of different thicknesses of selenium layers has been studied. Insight into the mechanism of this…”
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An effect of phonon on electron mean-free-path in ionic crystals by Feng, P.X., Leckey, R.C.G.

“…Electron inelastic-scattering mean-free-path (MFP) in ionic crystals has been studied. A correction procedure has been considered which is related to the…”
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The Fermi surface dimensions of disordered Cu 3Au as determined by angle resolved photoemission spectroscopy by Con Foo, J.A., Stampfl, A.P.J., Mattern, B., Ziegler, A., Hollering, M., Ley, L., Riley, J.D., Leckey, R.C.G.

“…The bulk Fermi surface of the disordered phase of Cu 3Au has been experimentally mapped using angle resolved constant initial state (CIS) photoemission…”
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The surface valence band structure of the two phases of ZnSe(100) by Xue, J.Y, Stampfl, A.P.J, Wolfframm, D, Evans, D.A, Hollering, M, Ley, L, Riley, J.D, Leckey, R.C.G

“…The valence band structures of the (2×1) and c(2×2) phases of ZnSe{100} have been mapped using angle-resolved photoelectron spectroscopy. The surface band…”
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The fermi surface dimensions of disordered Cu3Au as determined by angle resolved photoemission spectroscopy by CON FOO, J. A, STAMPFL, A. P. J, MATTERN, B, ZIEGLER, A, HOLLERING, M, LEY, L, RILEY, J. D, LECKEY, R. C. G

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Mapping the Fermi surface of Cu using ARUPS by Stampfl, A.P.J., Foo, J.A.Con, Leckey, R.C.G., Riley, J.D., Denecke, R., Ley, L.

“…The topology of the Fermi surface of copper has been illuminated in a direct fashion using the technique of photoelectron spectroscopy. Full emission…”
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The valence band structure of the ZnSe{001}-(2 × 1) surface as determined by angle-resolved photoemission spectroscopy by Zhang, Y., Xue, J.Y., Foo, J.A.Con, Stampfl, A.P.J., Wolfframm, D., Evans, D.A., Riley, J.D., Leckey, R.C.G., Ziegler, A., Mattern, B., Graupner, R., Hollering, M., Denecke, R., Ley, L.

“…The valence band structure of the (2 × 1) reconstructed surface of ZnSe{001} has been investigated using angle-resolved photoemission spectroscopy. The results…”
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Photoelectron holography of GaAs(001) by Denecke, R., Eckstein, R., Ley, L., Bocquet, A.E., Riley, J.D., Leckey, R.C.G.

“…Starting from holograms of GaAs(001) for both Ga 3d and As 3d emission measured with synchrotron radiation, real space images have been obtained. The…”
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Angle resolved photoemission and the band structure of 6H-SiC by Hollering, M., Ziegler, A., Graupner, R., Mattern, B., Ley, L., Stampfl, A.P.J., Riley, J.D., Leckey, R.C.G.

“…Well ordered, unreconstructed, C-terminated surfaces of 6H-SiC(000 1 ) were obtained after treatment with a hydrogen microwave plasma. From angle resolved…”
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A temperature-dependent study of the magnetic surface states on Ni(100) using angle-resolved photoemission by Cai, Y.Q., Bradshaw, A.M., Stampfl, A.P.J., Tkatchenko, S., Riley, J.D., Leckey, R.C.G.

“…A temperature-dependent study of the magnetic surface states on Ni(100) near the Fermi level reported by Plummer and Eberhardt [Phys. Rev. B 20 (1979) 1444]…”
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The use of symmetry for absolute E( K) determinations from IPS measurements of face-centred cubic crystals by Sheils, W, Riley, J.D, Leckey, R.C.G

“…This letter outlines a method for the experimental determination of E( K) within the high symmetry planes of face-centred cubic (FCC) crystals. The method…”
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Surface states and surface umklapp transitions in angle-resolved photoemission from a GaAs( [formula omitted][formula omitted][formula omitted])-2×2 surface by Cai, Y.Q., Leckey, R.C.G., Riley, J.D., Stampfl, A.P.J., Ley, L.

“…Studies of angle-resolved photoemission from an As-rich GaAs( 1 1 1 )-2x2 surface have been extended to off-normal emission. The experimentally observed peak…”
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Photoelectron determination of the attenuation of low-energy electrons in Al 2 O 3 by Battye, F. L., Jenkin, J. G., Liesegang, J., Leckey, R.C.G.

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Strain relief and interfacial structure in ZnSe layers grown on GaAs substrates by Zhang, Y., Usher, B.F., Riley, J.D., Huang, X., Zou, J., Leckey, R.C.G., Wolfframm, D.

“…Most II-VI device structures are grown on GaAs substrates. The lattice mismatch which exists between the epilayer and substrate consequently induces a strain…”
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Electron Distribution in Low-voltage Arcs by LECKEY, R. C. G, HIGGINSON, G. S, EMELEUS, K. G

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