Search Results - "Leckey, R. G. C."

Electronic properties of clean unreconstructed 6H–SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy by Emtsev, K.V., Seyller, Th, Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Preuss, M.

“…The properties of the clean and unreconstructed 6H–SiC(0 0 0 1) and 6H–SiC ( 0 0 0 1 ¯ ) surfaces were investigated by means of angle-resolved photoelectron…”
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Structural and electronic properties of graphite layers grown on SiC(0 0 0 1) by Seyller, Th, Emtsev, K.V., Gao, K., Speck, F., Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Rader, O., Varykhalov, A., Shikin, A.M.

“…Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of…”
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An effect of phonon on electron mean-free-path in ionic crystals by Feng, P.X., Leckey, R.C.G.

“…Electron inelastic-scattering mean-free-path (MFP) in ionic crystals has been studied. A correction procedure has been considered which is related to the…”
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Apparent “three-dimensional” Fermi surface of transition-metal monolayers by Rader, O., Wolf, H., Gudat, W., Tadich, A., Broekman, L., Huwald, E., Leckey, R. C. G., Riley, J. D., Shikin, A. M., Matsui, F., Miyata, H., Daimon, H.

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The use of symmetry for absolute E( K) determinations from IPS measurements of face-centred cubic crystals by Sheils, W, Riley, J.D, Leckey, R.C.G

“…This letter outlines a method for the experimental determination of E( K) within the high symmetry planes of face-centred cubic (FCC) crystals. The method…”
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Fermi Surface of Disordered Cu3Au as Determined by Angle-resolved Photoemission by Con Foo, J. A., Tkatchenko, S., Stampfl, A. P. J., Ziegler, A., Mattern, B., Hollering, M., Denecke, R., Ley, L., Riley, J. D., Leckey, R. C. G.

“…The bulk Fermi surface of the disordered phase of Cu3Au has been experimentally mapped using angle‐resolved constant initial‐state photoemission spectroscopy…”
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Angle‐resolved photoemission and band structure of the alloy Al0.5Ga0.5As compared to that of the superlattice [(AlAs)2/(GaAs)2]10 by Zhang, X. D., Riley, J. D., Leckey, R. C. G., Kemister, G., Denecke, R., Faul, J., Ley, L.

“…A comparison between the electronic structure of the alloy Al0.5Ga0.5As and that of the superlattice [(AlAs)2/(GaAs)2]10 as determined by angle‐resolved…”
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Correlation effects at ideal SiC { 0001 } − ( 1 × 1 ) surfaces by Emtsev, K. V., Seyller, Th, Ley, L., Broekman, L., Tadich, A., Riley, J. D., Leckey, R. G. C., Preuss, M.

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Band structure of InGaAs by Stampfl, A., Kemister, G., Leckey, R. C. G., Riley, J. D., Hillebrecht, F. U., Ehlers, D. H., Ley, L.

“…The valence‐band structure of unstrained In0.27Ga0.73As grown as a 4000‐Å‐thick overlayer on GaAs, has been determined in the (001) direction from…”
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Publisher's Note: Correlation effects at ideal SiC { 0001 } − ( 1 × 1 ) surfaces [Phys. Rev. B 73 , 075412 (2006)] by Emtsev, K. V., Seyller, Th, Ley, L., Broekman, L., Tadich, A., Riley, J. D., Leckey, R. G. C., Preuss, M.

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Effect of strain on the band structure of InGaAs by Stampfl, A, Kemister, G, Leckey, R C G, Riley, J D, Orders, P J, Usher, B, Hillebrecht, F U, Ley, L

“…Angle resolved photoemission measurements covering the photon range 10.0 to 50.0 eV have been made on MBE grown In sub(0.27)Ga sub(0.73)As (100) layers using…”
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Photoemission study of the electronic structure of a (GaAs)2/(AlAs)2 superlattice by CAI, Y. Q, RILEY, J. D, LECKEY, R. C. G, USHER, B, FRAXEDAS, J, LEY, L

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Conduction-band structure of GaAs as determined by angle-resolved photoemission by ZHANG, X. D, RILEY, J. D, LECKEY, R. C. G, LEY, L

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Al 2 O 3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) by Gao, K. Y., Seyller, Th, Ley, L., Ciobanu, F., Pensl, G., Tadich, A., Riley, J. D., Leckey, R. G. C.

“…Al 2 O 3 films were deposited as alternative gate dielectric on hydrogen-terminated 6H-SiC(0001) by atomic layer chemical vapor deposition and characterized by…”
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Electronic band structure of the alkali halides. I. Experimental parameters by Poole, R. T., Jenkin, J. G., Liesegang, J., Leckey, R. C. G.

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Electronic states of an ordered oxide on C-terminated 6H–SiC by Hollering, M., Maier, F., Sieber, N., Stammler, M., Ristein, J., Ley, L., Stampfl, A.P.J., Riley, J.D., Leckey, R.C.G., Leisenberger, F.P., Netzer, F.P.

“…An ordered oxide monolayer with ( 3 × 3 )R30° periodicity was obtained on carbon-terminated 6H–SiC(0001̄) after preparation with a hydrogen microwave plasma…”
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Angle-resolved constant-initial-state spectroscopy of GaAs by FRAXEDAS, J, STAMPFL, A, LECKEY, R. C. G, RILEY, J. D, LEY, L

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Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center by FAUL, J, NEUHOLD, G, LEY, L, FRAXEDAS, J, ZOLLNER, S, RILEY, J. D, LECKEY, R. C. G

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Polarization-dependent angle-resolved photoemission study of a surface state on GaSb(110) by ZHANG, X. D, LECKEY, R. C. G, RILEY, J. D, FAUL, J, LEY, L

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Photoelectron Emission from Alkali Halide Surfaces by Poole, R. T., Jenkin, J. G., Leckey, R. C. G., Liesegang, J.

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