Search Results - "Lebedev, Mikhail V."
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Synchrotron Photoemission Spectroscopy Study of p‑GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions
Published in Journal of physical chemistry. C (27-04-2017)“…(Photo)electrochemical processes occurring under cathodic polarization at the p-GaInP2(100)/1 M HClaq solution interface were investigated in detail by…”
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Sulfur Passivation of GaSb(100) Surfaces: Comparison of Aqueous and Alcoholic Sulfide Solutions Using Synchrotron Radiation Photoemission Spectroscopy
Published in Journal of physical chemistry. C (08-08-2013)“…In an attempt to rationalize empirically developed GaSb device optimization using alcoholic versus aqueous sulfide solutions, synchrotron radiation…”
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3
Synchrotron photoemission spectroscopy study of ammonium hydroxide etching to prepare well-ordered GaAs(1 0 0) surfaces
Published in Applied surface science (15-05-2004)“…Synchrotron-induced photoelectron spectroscopy was used to investigate the native-oxide-covered GaAs(100) surface and changes induced by etching with aqueous…”
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4
Photoelectrochemical Processes at n‑GaAs(100)/Aqueous HCl Electrolyte Interface: A Synchrotron Photoemission Spectroscopy Study of Emersed Electrodes
Published in Journal of physical chemistry. C (19-06-2014)“…High-resolution synchrotron photoemission spectroscopy has been applied to detail the electrochemical and photoelectrochemical corrosion reactions at the…”
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5
Semiconductor/electrolyte interfaces for solar energy conversion: Interface studies by synchrotron induced photoelectron spectroscopy
Published in Journal of electron spectroscopy and related phenomena (01-11-2017)“…•Introduction to the electronic structure of the semiconductor/electrolyte interface.•Valence state structure of the energy converting interface of a dye…”
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6
Superior electronic passivation of n-GaP(100) surface using alcoholic as compared to aqueous ammonium sulfide solution: Wet processing studied with synchrotron photoelectron spectroscopy
Published in Physica status solidi. A, Applications and materials science (01-09-2014)“…The chemical composition and the electronic properties of the n‐GaP(100) surface treated with ammonium sulfide dissolved in water versus 2‐propanol is…”
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7
Wet-chemical bromination of Ge (100): A facile surface passivation tool
Published in Applied physics letters (06-08-2018)“…We demonstrate that wet-chemical surface bromination is an effective and a simple etching method for Ge surface oxide removal, providing excellent reoxidation…”
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Sulfur passivation of InSb(100) surfaces: Comparison of aqueous and alcoholic ammonium sulfide solutions using X-ray photoemission spectroscopy
Published in Applied surface science (30-08-2014)“…•Interaction between InSb(100) surface and sulfide solution is determined by solvent.•Aqueous ammonium sulfide solution withdraws Sb atoms from InSb(100)…”
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Sulfur Adsorption at GaAs: Role of the Adsorbate Solvation and Reactivity in Modification of Semiconductor Surface Electronic Structure
Published in The journal of physical chemistry. B (14-06-2001)“…Density functional theory was used to calculate the global hardness and the local (condensed) softness of the free and monosolvated hydrosulfide-ion HS- in…”
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10
Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(100)
Published in Applied surface science (15-02-2013)“…► Free carriers dynamics in GaAs treated with various sulfide solutions are studied. ► Treatment with sulfide solutions decreases surface recombination…”
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11
Etching of GaAs(100) with Aqueous Ammonia Solution: A Synchrotron-Photoemission Spectroscopy Study
Published in Journal of physical chemistry. C (16-12-2010)“…Etching of the GaAs(100) surface with aqueous ammonia solution is studied by highly surface-sensitive synchrotron-radiation photoemission spectroscopy. It is…”
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12
Passivation at semiconductor/electrolyte interface: Role of adsorbate solvation and reactivity in surface atomic and electronic structure modification of III–V semiconductor
Published in Applied surface science (15-10-2008)“…These studies are focused on understanding the role played by a solvent in chemical and electronic processes occurred in the course of semiconductor surface…”
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Chemical analysis of a sulfur-treated InSb(111)A surface by XPS
Published in Surface and interface analysis (01-06-2010)“…Chemistry of an InSb(111)A surface treated with ammonium sulfide solution followed by annealing at various temperatures has been studied by x‐ray photoelectron…”
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14
Interaction of 2-Propanol with the GaAs(100) Surface
Published in Journal of physical chemistry. C (26-11-2009)“…Synchrotron photoemission spectroscopy is applied to study the interaction of 2-propanol with the clean GaAs(100) surface to understand the solid−solvent…”
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15
Wet Etching of GaAs(100) in Acidic and Basic Solutions: A Synchrotron−Photoemission Spectroscopy Study
Published in Journal of physical chemistry. C (27-11-2008)“…The interaction of the oxide-free GaAs(100) surface with acidic (HCl + 2-propanol) and basic (aqueous NH3) solutions is studied by synchrotron−photoemission…”
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Electronic properties of GaAs(100) surface passivated in alcoholic sulfide solutions
Published in Applied surface science (01-05-1998)“…Using Raman spectroscopy and the Kelvin probe method the surface band bending and electron work function of GaAs(100) passivated in aqueous and alcoholic…”
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Sulfur adsorption at GaAs(1 0 0) from solution: role of the solvent in surface chemistry
Published in Surface science (10-12-2003)“…The chemistry of GaAs(1 0 0) oxide-free surfaces treated with solutions of ammonium sulfide in different amphiprotic solvents (water, alcohols) was studied by…”
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Synchrotron Photoemission Analysis of Semiconductor/Electrolyte Interfaces by the Frozen-Electrolyte Approach: Interaction of HCl in 2-Propanol with GaAs(100)
Published in The journal of physical chemistry. B (09-02-2006)“…Perspectives of a new approach for the synchrotron photoemission spectroscopic analysis of chemical processes at solid/liquid interfaces under UHV conditions…”
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19
Dipole modification of the surface electronic structure of III–V semiconductors
Published in Solid state communications (01-06-2024)“…A simple electrostatic model is proposed to account for the effect of dipoles associated with surface chemical bonds on the electronic structure of the…”
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Chemical modification of the GaP(001) surface electric field with sulfide solutions
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-05-2023)“…•Electric field on sulfur-passivated n- and p-GaP(001) surfaces is probed by RAS and SXPS;•Sulfur passivation of n-GaP(001) surface causes decrease in the…”
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