Search Results - "Lebedev, A.O."

Justification for the Body Construction Selection of the Unmanned Uninhabited Underwater Apparatus by Lebedeva, M.P., Lebedev, A.O., Butsanets, A.A.

“…The paper explores the possibility of creating an underwater apparatus in the form of a body of rotation. The form of the device will allow to effectively…”
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On the Structural Perfection of Large-Diameter Silicon Carbide Ingots by Bykov, Yu. O., Lebedev, A. O., Shcheglov, M. P.

“…4 H -silicon carbide ingots with high structural perfection have been grown by the modified Lely method (LETI method) on 100-mm-diameter seeds. Using our…”
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Peculiarities of Using Lymphocyte Test to Predict the Severity of Acute Radiation Injury by Lebedev, A.O., Samoylov, A.S., Solovyev, V.Yu, Baranova, N.N., Gudkov, E.A.

“…One of the methods of biological dosimetry is the use of information on the concentration of lymphocytes in the peripheral blood of victims in the first days…”
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Issues of Scientific Support of Radiation Safety Based on the Experience of Overcoming the Consequences of the Chernobyl Accident by Kvacheva, Yu.E., Shandala, N.K., Parinov, O.V., Metlyaev, E.G., Lebedev, A.O.

“…The measures on liquidation of the Chernobyl accident consequences are analyzed from the point of view of topical issues of ensuring radiation safety of the…”
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Polytype inclusions and polytype stability in silicon-carbide crystals by Avrov, D. D., Lebedev, A. O., Tairov, Yu. M.

“…On the basis of both published data and our own experimental data we consider the main aspects of the problem related to ensuring polytype stability for ingots…”
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Growth of 4H silicon carbide crystals on a (112) seed by Fadeev, A. Yu, Lebedev, A. O., Tairov, Yu. M.

“…The features of the defect structure of 4 H silicon carbide ingots grown by the modified Lely method on (11 2)-oriented seeds are studied. It is shown that…”
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Defect structure of 4H silicon carbide ingots by Lebedev, A.O., Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Tairov, Yu.M., Fadeev, A.Yu

“…Defects caused by 15R polytype inclusions in 4H silicon carbide ingots have been considered. Growth rate along with curvature of the interface determines the…”
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Mechanisms of defect formation in ingots of 4H silicon carbide polytype by Avrov, D. D., Bulatov, A. V., Dorozhkin, S. I., Lebedev, A. O., Tairov, Yu. M., Fadeev, A. Yu

“…The methods of optical microscopy and X-ray diffractometry have been used to study the features of defect structure in ingots of the SiC-4 H polytype; the…”
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Defect formation in silicon carbide large-scale ingots grown by sublimation technique by Avrov, D.D., Bulatov, A.V., Dorozhkin, S.I., Lebedev, A.O., Tairov, Yu.M.

“…A model that includes both thermophoretic force and advective flow is developed to describe the mechanism of appearance of carbon macroinclusions in silicon…”
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Stress and misoriented area formation under large silicon carbide boule growth by Bakin, A.S., Dorozhkin, S.I., Lebedev, A.O., Kirillov, B.A., Ivanov, A.A., Tairov, Yu.M.

“…The presence of slightly misoriented (less than 1°) comparatively large areas in silicon carbide boules grown by the sublimation method is one of the types of…”
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Features of SiC single-crystals grown in vacuum using the LETI method by Rastegaev, V.P, Avrov, D.D, Reshanov, S.A, Lebedev, A.O

“…The growth of silicon carbide crystals in vacuum by the LETI method gives 6H and 4H polytypes of n- and p-type conductivity. This is done by the appropriate…”
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Phonon spectrum of wurtzite GaN and AlN: Experiment and theory by Davydov, V.Yu, Kitaev, Yu.E, Goncharuk, I.N, Tsaregorodtsev, A.M, Smirnov, A.N, Lebedev, A.O, Botnaryk, V.M, Zhilyaev, Yu.V, Smirnov, M.B, Mirgorodsky, A.P, Semchinova, O.K

“…We present the results of a detailed study of the first and second-order Raman scattering in wurtzite GaN and AlN at room and liquid helium temperatures. A…”
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Symmetry constraints and epitaxial growth on non-isomorphic substrate by Efimov, A.N., Lebedev, A.O.

“…Symmetry considerations discussed in the paper enable one to determine the constraints on single crystal growth in deposition on non-isomorphic substrates…”
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Phonon spectrum of wurtzite GaN and AlN by Davydov, V.Yu, Kitaev, Yu.E, Goncharuk, I.N, Tsaregorodtsev, A.M, Smirnov, A.N, Lebedev, A.O, Botnaryk, V.M, Zhilyaev, Yu.V, Smirnov, M.B, Mirgorodsky, A.P, Semchinova, O.K

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Coherent heterostructures with non-cubic components: strains and stresses for arbitrary interface orientations — theory and applications by Efimov, A.N., Lebedev, A.O.

“…A method for calculating strain and stress tensors and the density of elastic energy in the framework of linear anisotropic elasticity theory has been…”
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Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K by Avrov, D.D., Bakin, A.S., Dorozhkin, S.I., Rastegaev, V.P., Tairov, Yu.M., Bilalov, B.A., Safaraliev, G.K., Shabanov, S.A., Lebedev, A.O.

“…The electrophysical properties of SiC-AlN, SiC-BeO, and Al/sub 2/O/sub 3/ ceramics at high temperatures were investigated. Samples of ceramics were obtained by…”
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