Search Results - "Leary, M.H."

High temperature continuous-wave operation of 1.3- and 1.55-μm VCSELs with InP/Air-Gap DBRs by Chao-Kun Lin, Bour, D.P., Jintian Zhu, Perez, W.H., Leary, M.H., Tandon, A., Corzine, S.W., Tan, M.R.T.

“…We demonstrate novel electrically pumped 1.3- and 1.55- mu m vertical cavity surface emitting lasers (VCSELs) with two InP/air-gap distributed Bragg reflectors…”
Get full text

High temperature continuous-wave operation of 1.3- and 1.55-/spl mu/m VCSELs with InP/air-gap DBRs by Chao-Kun Lin, Bour, D.P., Jintian Zhu, Perez, W.H., Leary, M.H., Tandon, A., Corzine, S.W., Tan, M.R.T.

“…We demonstrate novel electrically pumped 1.3- and 1.55-/spl mu/m vertical cavity surface emitting lasers (VCSELs) with two InP/air-gap distributed Bragg…”
Get full text

High temperature continuous-wave operation of 1.3- and 1.55-[micro]m VCSELs with InP/air-gap DBRs by Lin, Chao-Kun, Bour, D.P, Zhu, Jintian, Perez, W.H, Leary, M.H, Tandon, A, Corzine, S.W, Tan, M.R.T

“…For both 1.3and 1.55-μm emission wavelengths, air-gap DBR VCSELs exhibit room-temperature continuous wavelength (CW) threshold current density as low as 1.1…”
Get full text

Long-wavelength triangular ring laser by Ji, C., Leary, M.H., Ballantyne, J.M.

“…Single-lateral mode, long-wavelength, waveguide diode-ring lasers have been fabricated in InP-InGaAsP with facets etched using CAIBE. The devices lase at…”
Get full text

Mesa-sidewall gate leakage in InAlAs/InGaAs heterostructure field-effect transistors by Bahl, S.R., Leary, M.H., del Alamo, J.A.

“…InAlAs/InGaAs HFETs fabricated by conventional mesa isolation have a potential parasitic gate-leakage path where the gate metallization overlaps the exposed…”
Get full text

MSM waveguide photodetectors optimized for monolithic integration with high electron mobility transistors by Leary, M.H., Ballantyne, J.M.

“…This paper describes the design of two types of MSM photodetectors, one with interdigitated fingers running across a waveguide and one with electrodes running…”
Get full text

MSM waveguide photodetectors optimized for monolithic integration with HEMTs by Leary, M.H., Ballantyne, J.M.

“…The authors describe the design of two MSM waveguide photodetectors which share their layer structure with high electron mobility transistors. This design…”
Get full text

Triangular ring laser in InP/InGaAsP by Ji, C., Leary, M.H., Ballantyne, J.M.

“…A fabricated InP-InGaAsP triangular ring laser is shown. Light is coupled out through the facet at bottom. The two nearly total internal reflection (TIR)…”
Get full text