Search Results - "Leach, Jacob H."

Ga2O3‑on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics by Song, Yiwen, Shoemaker, Daniel, Leach, Jacob H, McGray, Craig, Huang, Hsien-Lien, Bhattacharyya, Arkka, Zhang, Yingying, Gonzalez-Valle, C. Ulises, Hess, Tina, Zhukovsky, Sarit, Ferri, Kevin, Lavelle, Robert M, Perez, Carlos, Snyder, David W, Maria, Jon-Paul, Ramos-Alvarado, Bladimir, Wang, Xiaojia, Krishnamoorthy, Sriram, Hwang, Jinwoo, Foley, Brian M, Choi, Sukwon

“…β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor (E G ∼ 4.8 eV), which promises generational improvements in the performance…”
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Universal phonon mean free path spectra in crystalline semiconductors at high temperature by Freedman, Justin P., Leach, Jacob H., Preble, Edward A., Sitar, Zlatko, Davis, Robert F., Malen, Jonathan A.

“…Thermal conductivity in non-metallic crystalline materials results from cumulative contributions of phonons that have a broad range of mean free paths. Here we…”
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Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results by Edwards, Paul R, O'Donnell, Kevin P, Singh, Akhilesh K, Cameron, Douglas, Lorenz, Katharina, Yamaga, Mitsuo, Leach, Jacob H, Kappers, Menno J, Boćkowski, Michal

“…Europium is the most-studied and least-well-understood rare earth ion (REI) dopant in GaN. While attempting to increase the efficiency of red GaN…”
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Ultra-Wide Band Gap Ga2O3‑on-SiC MOSFETs by Song, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H., Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon

“…Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and…”
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Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers by Leach, Jacob H., Udwary, Kevin, Dodson, Gregg, Tran, Tinh B., Splawn, Heather A.

“…The halide vapor‐phase epitaxy (HVPE) technique has been extensively used for the production of freestanding GaN crystals for GaN wafer manufacturing, but has…”
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Ultra-Wide Band Gap Ga 2 O 3 -on-SiC MOSFETs by Song, Yiwen, Bhattacharyya, Arkka, Karim, Anwarul, Shoemaker, Daniel, Huang, Hsien-Lien, Roy, Saurav, McGray, Craig, Leach, Jacob H, Hwang, Jinwoo, Krishnamoorthy, Sriram, Choi, Sukwon

“…Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga O ) offer the potential to achieve higher switching performance and efficiency and…”
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Study of interface trap density of AlOxNy/GaN MOS structures by Song, Jianan, Han, Sang-Woo, Luo, Haoting, Rumsey, Jaime, Leach, Jacob H., Chu, Rongming

“…GaN metal–oxide–semiconductor structures were fabricated by atomic layer deposition of aluminum oxynitride thin films on bulk GaN substrates with c-, a-, and…”
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Small Signal Equivalent Circuit Modeling for AlGaN/GaN HFET: Hybrid Extraction Method for Determining Circuit Elements of AlGaN/GaN HFET by Fan, Qian, Leach, Jacob H., Morkoc, Hadis

“…The developments in AlGaN/GaN heterojunction field effect transistors (HFETs) are beginning to allow harnessing of the great potential of this technology in…”
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Status of Reliability of GaN-Based Heterojunction Field Effect Transistors by Leach, Jacob H., Morkoc, Hadis

“…GaN-based heterojunction field effect transistors (HFETs) will play major roles in the high-power, high-frequency military and commercial arenas for microwave…”
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Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping by Slomski, Michael, Paskov, Plamen P., Leach, Jacob H., Muth, John F., Paskova, Tania

“…The thermal conductivity of bulk GaN grown by Hydride Phase Vapor Epitaxy with intentional Si doping was measured using the 3ω method. The effect of Si…”
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High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors by Xie, Jinqiao, Ni, Xianfeng, Wu, Mo, Leach, Jacob H., Özgür, Ümit, Morkoç, Hadis

“…High electron mobility was achieved in Al1−xInxN∕AlN∕GaN (x=0.20–0.12) heterostructure field effect transistors (HFETs) grown by metal-organic chemical vapor…”
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Growth of AlGaAs, AlInP, and AlGaInP by Hydride Vapor Phase Epitaxy by Schulte, Kevin L, Metaferia, Wondwosen, Simon, John, Guiling, David, Udwary, Kevin, Dodson, Gregg, Leach, Jacob H, Ptak, Aaron J

“…We demonstrate hydride vapor phase epitaxy (HVPE) of Al x Ga1–x As, Al x In1–x P, and Al x Ga y ­In1–x–y P using an AlCl3 precursor. We study the growth of the…”
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HVPE GaN for high power electronic Schottky diodes by Tompkins, Randy P., Walsh, Timothy A., Derenge, Michael A., Kirchner, Kevin W., Zhou, Shuai, Nguyen, Cuong B., Jones, Kenneth A., Mulholland, Gregory, Metzger, Robert, Leach, Jacob H., Suvarna, Puneet, Tungare, Mihir, Shahedipour-Sandvik, Fatemeh (Shadi)

“…► Vertical and front-side Schottky diodes were fabricated on HVPE GaN substrates. ► FOM of ≈250MW/cm2 was extracted after subtracting Rsub. ► Large variation…”
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Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric by Kayis, C, Leach, J H, Zhu, C Y, Wu, M, Li, X, Özgür, Ümit, Morkoç, H, Yang, X, Misra, V, Handel, P H

“…We report on the low-frequency phase-noise measurements of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors employing HfAlO as the…”
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Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures by Leach, Jacob H., Wu, Mo, Ni, Xianfeng, Li, Xing, Özgür, Ümit, Morkoç, Hadis, Liberis, Juozas, Šermukšnis, Emilis, Matulionis, Arvydas, Cheng, Hailing, Kurdak, Çagliyan, Moon, Yong-Tae

“…InAlN/GaN heterostructures offer some benefits over existing AlGaN/GaN heterostructures for HFET device applications. In addition to having a larger bandgap…”
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Ga 2 O 3 -on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics by Song, Yiwen, Shoemaker, Daniel, Leach, Jacob H., McGray, Craig, Huang, Hsien-Lien, Bhattacharyya, Arkka, Zhang, Yingying, Gonzalez-Valle, C. Ulises, Hess, Tina, Zhukovsky, Sarit, Ferri, Kevin, Lavelle, Robert M., Perez, Carlos, Snyder, David W., Maria, Jon-Paul, Ramos-Alvarado, Bladimir, Wang, Xiaojia, Krishnamoorthy, Sriram, Hwang, Jinwoo, Foley, Brian M., Choi, Sukwon

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Characterization of the Thermal Boundary Resistance of a Ga2O3/4H-SiC Composite Wafer by Song, Yiwen, Chatterjee, Bikramjit, McGray, Craig, Zhukovsky, Sarit, Leach, Jacob H., Hess, Tina, Foley, Brian M., Choi, Sukwon

“…The β-gallium oxide (Ga 2 O 3 ) material system offers the potential to dramatically improve the electrical performance and cost-effectiveness of…”
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Epitaxial growth of (001)-oriented Ba0.5Sr0.5TiO3 thin films on a-plane sapphire with an MgO/ZnO bridge layer by Xiao, Bo, Liu, Hongrui, Avrutin, Vitaliy, Leach, Jacob H., Rowe, Emmanuel, Liu, Huiyong, Özgür, Ümit, Morkoç, Hadis, Chang, W., Alldredge, L. M. B., Kirchoefer, S. W., Pond, J. M.

“…High quality (001)-oriented Ba0.5Sr0.5TiO3 (BST) thin films have been grown on a-plane sapphire (112¯0) by rf magnetron sputtering using a double bridge layer…”
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High electron mobility in nearly lattice-matched Al In N ∕ Al N ∕ Ga N heterostructure field effect transistors by Xie, Jinqiao, Ni, Xianfeng, Wu, Mo, Leach, Jacob H., Özgür, Ümit, Morkoç, Hadis

“…High electron mobility was achieved in Al 1 − x In x N ∕ Al N ∕ Ga N ( x = 0.20 - 0.12 ) heterostructure field effect transistors (HFETs) grown by…”
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Frequency conversion in periodically oriented gallium nitride by Bowman, Steven R., Brown, Christopher G., Hite, Jennifer K., Freitas, Jaime A., Kub, Francis J., Eddy, Charles R., Vurgaftman, Igor, Meyer, Jerry R., Leach, Jacob H., Udwary, Kevin

“…Broadband transparency, high thermal conductivity, and strong nonlinearity make gallium nitride a promising material for high power frequency conversion. We…”
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