Search Results - "Le Si Dang, D."

Study of Au/ZnO nanorods Schottky light-emitting diodes grown by low-temperature aqueous chemical method by Bano, N., Hussain, I., Nur, O., Willander, M., Kwack, H. S., Le Si Dang, D.

“…High quality vertically aligned ZnO nanorods (NRs) were grown by low-temperature aqueous chemical technique on 4H-n-SiC substrates. Schottky light-emitting…”
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Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate by Chen, X.J., Hwang, J.S., Perillat-Merceroz, G., Landis, S., Martin, B., Le Si Dang, D., Eymery, J., Durand, C.

“…Selective area growth of GaN nanostructures has been performed on full 2″ c-sapphire substrates using Si 3N 4 mask patterned by nanoimprint lithography (array…”
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Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC by Bano, N., Hussain, I., Nur, O., Willander, M., Wahab, Q., Henry, A., Kwack, H.S., Le Si Dang, D.

“…Optical properties of ZnO nanorods (NRs) grown by vapour–liquid–solid (VLS) technique on 4H-p-SiC substrates were probed by cathodoluminescence (CL)…”
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Experimental determination of intrinsic nonlinearities in semiconductor microcavities by Huynh, A., Tignon, J., Roussignol, Ph, Delalande, C., Romestain, R., Le Si Dang, D., André, Régis

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The growth and rare-earth doping of GaN quantum dots on Alx Ga1-x N layer by plasma-assisted molecular beam epitaxy by Hori, Y., Andreev, T., Bellet-Amalric, E., Oda, O., Le Si Dang, D., Daudin, B.

“…We report on the self organized growth of GaN quantum dots deposited on Alx Ga1–x N layer by plasma‐assisted molecular beam epitaxy. It is found that the…”
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Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy by Brault, J., Bellet-Amalric, E., Tanaka, S., Enjalbert, F., Le Si Dang, D., Sarigiannidou, E., Rouviere, J.-L., Feuillet, G., Daudin, B.

“…We present the growth of AlN films on vicinal substrates of SiC(0001). The layers were grown by plasma‐assisted molecular beam epitaxy (PAMBE) and examined…”
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Coherent dynamics of microcavity polaritons in the nonlinear regime by Huynh, A, Tignon, J, Roussignol, Ph, Delalande, C, André, R, Romestain, R, Le Si Dang, D

“…We report an experimental study of polariton coherent dynamics in II–VI semiconductor microcavities in the nonperturbative regime, using transient four-wave…”
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Electro-optical and cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes by Kishwar, S., Hasan, K. ul, Tzamalis, G., Nur, O., Willander, M., Kwack, H. S., Dang, D. Le Si

“…Vertically aligned ZnO nanorods (NRs) with a diameter in the range of 160–200 nm were grown on p‐GaN/sapphire substrates by aqueous chemical growth technique…”
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Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy by Helman, A., Tchernycheva, M., Lusson, A., Warde, E., Julien, F. H., Moumanis, Kh, Fishman, G., Monroy, E., Daudin, B., Le Si Dang, D., Bellet-Amalric, E., Jalabert, D.

“…We report experimental and theoretical results on interband and intersubband transitions in GaN quantum wells with strained AlN barriers. All of the samples…”
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The growth and rare‐earth doping of GaN quantum dots on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy by Hori, Y., Andreev, T., Bellet‐Amalric, E., Oda, O., Le Si Dang, D., Daudin, B.

“…Abstract We report on the self organized growth of GaN quantum dots deposited on Al x Ga 1– x N layer by plasma‐assisted molecular beam epitaxy. It is found…”
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Nonlinear emission in II–VI pillar microcavities: Strong versus weak coupling by Obert, M., Renner, J., Forchel, A., Bacher, G., André, R., Le Si Dang, D.

“…Pillar microcavities based on CdMnTe/CdMgTe heterostructures have been investigated by means of spatially resolved optical spectroscopy. Strong coupling with a…”
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Experimental Determination of Intrinsic Non-Linearities in Semiconductor Microcavities in the Coherent Regime by Huynh, A., Tignon, J., Roussignol, Ph, Delalande, C., André, R., Romestain, R., Le Si Dang, D.

“…We propose a method to determine the intrinsic non‐linearities in semiconductor microcavities in the non‐perturbative regime. The polariton coherent dynamics…”
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Emission spectroscopy of alkali halide phosphors doped with s 2 ions: KI: Sn 2 by Kamishina, Y., Jacobs, P. W. M., Simkin, D. J., Martin, J. -P., Oyama-Gannon, K., Si Dang, D. Le

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