Search Results - "Le Pouliquen, J"

23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers by Klaime, K, Calò, C, Piron, R, Paranthoen, C, Thiam, D, Batte, T, Dehaese, O, Le Pouliquen, J, Loualiche, S, Le Corre, A, Merghem, K, Martinez, A, Ramdane, A

“…Here we report for the first time a passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots(QDs) grown on (113)B InP…”
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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate by Salman, S., Folliot, H., Le Pouliquen, J., Chevalier, N., Rohel, T., Paranthoën, C., Bertru, N., Labbé, C., Letoublon, A., Le Corre, A.

“…► The thermal conductivity of InAs on InP (113)B quantum dots stacks is measured. ► The growth of a close stack of 100 layers of InAs using AlAs strain…”
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InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate by Klaime, K., Calo, C., Piron, R., Paranthoen, C., Thiam, D., Batte, T., Dehaese, O., Le Pouliquen, J., Loualiche, S., Le Corre, A., Merghem, K., Martinez, A., Ramdane, A.

“…We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate…”
Get full text