Search Results - "Lavanga, Simone"
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Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
Published in IEEE electron device letters (01-04-2014)“…Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic RDS,on…”
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Journal Article -
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Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin
Published in IEEE transactions on electron devices (01-03-2017)“…This paper demonstrates that-for high-electric fields and drain current levels-the electroluminescence (EL) versus VGS curves of GaN-on-Si radio frequency…”
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Thermal storage effects on AlGaN/GaN HEMT
Published in Microelectronics and reliability (01-08-2008)“…The effects of thermal storage on GaN–HEMT devices grown on SiC substrate have been investigated by DC and pulsed electrical measurements, breakdown…”
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Journal Article Conference Proceeding -
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Superconductivity and interlayer coupling in ultrathin artificially layered cuprates
Published in Physica. C, Superconductivity (01-08-2002)“…A structural requirement for high- T c (HTS) cuprates is the simultaneous presence in a layered structure of two different functional blocks, individually…”
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Journal Article