Search Results - "Lausecker, E"

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  1. 1

    UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays by Lausecker, E., Brehm, M., Grydlik, M., Hackl, F., Bergmair, I., Mühlberger, M., Fromherz, T., Schäffler, F., Bauer, G.

    Published in Applied physics letters (04-04-2011)
    “…We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam…”
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    Journal Article
  2. 2

    Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication by Lausecker, E., Huang, Y., Fromherz, T., Sturm, J. C., Wagner, S.

    Published in Applied physics letters (28-06-2010)
    “…We developed self-aligned imprint lithography (SAIL) for top-gate amorphous silicon (a-Si) thin-film transistors (TFTs). Our SAIL process enables a device…”
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    Journal Article
  3. 3

    Anisotropic remastering for reducing feature sizes on UV nanoimprint lithography replica molds by Lausecker, E, Grydlik, M, Brehm, M, Bergmair, I, Mühlberger, M, Fromherz, T, Bauer, G

    Published in Nanotechnology (27-04-2012)
    “…We present an approach that uses existing nanoimprint molds and reduces the size of the resulting features significantly via a remastering process utilizing…”
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    Journal Article
  4. 4

    Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands by Brehm, M, Grydlik, M, Hackl, F, Lausecker, E, Fromherz, T, Bauer, G

    Published in Nanoscale research letters (01-12-2010)
    “…For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when…”
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    Journal Article
  5. 5

    Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5 nm hp by MUEHIBERGER, M, BOEHM, M, PLATZGUMMER, E, LOESCHNER, H, JOECHL, P, EDER-KAPI, S, NARZT, T, LAUSECKER, E, FROMHERZ, T, BERGMAIR, I, CHOUIKI, M, SCHOEFTNER, R, KREINDL, G, KAST, M, TREIBLMAYR, D, GLINSNER, T, MILLER, R

    Published in Microelectronic engineering (01-08-2011)
    “…The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp - working…”
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    Conference Proceeding Journal Article
  6. 6

    Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands by Brehm, M, Grydlik, M, Hackl, F, Lausecker, E, Fromherz, T, Bauer, G

    Published in Nanoscale research letters (05-08-2010)
    “…For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when…”
    Get full text
    Journal Article
  7. 7

    Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition by Klenovský, P., Brehm, M., Křápek, V., Lausecker, E., Munzar, D., Hackl, F., Steiner, H., Fromherz, T., Bauer, G., Humlíček, J.

    “…The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001)…”
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    Journal Article
  8. 8
  9. 9

    Amorphous silicon: The other silicon by Sturm, J C, Huang, Y, Han, L, Liu, T, Hekmatshoar, B, Cherenack, K, Lausecker, E, Wagner, S

    Published in Ulis 2011 Ultimate Integration on Silicon (01-03-2011)
    “…While crystalline silicon FET's are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the…”
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    Conference Proceeding
  10. 10

    Nanoimprinted superlattice metallic photonic crystal as ultraselective solar absorber by Rinnerbauer, Veronika, Lausecker, E., Schaffler, F., Reininger, P., Strasser, G., Geil, R. D., Joannopoulos, J. D., Soljacic, M., Celanovic, I.

    Published in Optica (12-08-2015)
    “…Here, a two-dimensional superlattice metallic photonic crystal (PhC) and its fabrication by nanoimprint lithography on tantalum substrates are presented. The…”
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    Journal Article
  11. 11

    UV nanoimprint lithography for the realization of large-area orderedSiGe/Si(001) island arrays by Lausecker, E., Brehm, M., Grydlik, M., Hackl, F., Bergmair, I., Mühlberger, M., Fromherz, T., Schäffler, F., Bauer, G.

    Published in Applied physics letters (04-04-2011)
    “…We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam…”
    Get full text
    Journal Article
  12. 12
  13. 13

    Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5nmhp by Muehlberger, M., Boehm, M., Bergmair, I., Chouiki, M., Schoeftner, R., Kreindl, G., Kast, M., Treiblmayr, D., Glinsner, T., Miller, R., Platzgummer, E., Loeschner, H., Joechl, P., Eder-Kapl, S., Narzt, T., Lausecker, E., Fromherz, T.

    Published in Microelectronic engineering (01-08-2011)
    “…The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp – working…”
    Get full text
    Journal Article
  14. 14

    Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition by Klenovský, P, Brehm, M, Křápek, V, Lausecker, E, Munzar, D, Hackl, F, Steiner, H, Fromherz, T, Bauer, G, Humlíček, J

    Published 27-09-2012
    “…Physical Review B 86, 115305 (2012) The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered…”
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    Journal Article