Search Results - "Lausecker, E"
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UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays
Published in Applied physics letters (04-04-2011)“…We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam…”
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Journal Article -
2
Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication
Published in Applied physics letters (28-06-2010)“…We developed self-aligned imprint lithography (SAIL) for top-gate amorphous silicon (a-Si) thin-film transistors (TFTs). Our SAIL process enables a device…”
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Journal Article -
3
Anisotropic remastering for reducing feature sizes on UV nanoimprint lithography replica molds
Published in Nanotechnology (27-04-2012)“…We present an approach that uses existing nanoimprint molds and reduces the size of the resulting features significantly via a remastering process utilizing…”
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Journal Article -
4
Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
Published in Nanoscale research letters (01-12-2010)“…For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when…”
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Journal Article -
5
Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5 nm hp
Published in Microelectronic engineering (01-08-2011)“…The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp - working…”
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Conference Proceeding Journal Article -
6
Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
Published in Nanoscale research letters (05-08-2010)“…For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when…”
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Journal Article -
7
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Published in Physical review. B, Condensed matter and materials physics (04-09-2012)“…The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001)…”
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Journal Article -
8
Nanoimprinted superlattice metallic photonic crystal as ultraselective solar absorber
Published in Optica (20-08-2015)Get full text
Journal Article -
9
Amorphous silicon: The other silicon
Published in Ulis 2011 Ultimate Integration on Silicon (01-03-2011)“…While crystalline silicon FET's are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the…”
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Conference Proceeding -
10
Nanoimprinted superlattice metallic photonic crystal as ultraselective solar absorber
Published in Optica (12-08-2015)“…Here, a two-dimensional superlattice metallic photonic crystal (PhC) and its fabrication by nanoimprint lithography on tantalum substrates are presented. The…”
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Journal Article -
11
UV nanoimprint lithography for the realization of large-area orderedSiGe/Si(001) island arrays
Published in Applied physics letters (04-04-2011)“…We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam…”
Get full text
Journal Article -
12
Nanoimprinted superlattice metallic photonic crystal as ultraselective solar absorber
Published in Optica (01-01-2015)Get full text
Journal Article -
13
Nanoimprint lithography from CHARPAN Tool exposed master stamps with 12.5nmhp
Published in Microelectronic engineering (01-08-2011)“…The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp – working…”
Get full text
Journal Article -
14
Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition
Published 27-09-2012“…Physical Review B 86, 115305 (2012) The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered…”
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Journal Article