Search Results - "Laurenti, J. P."
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Mass spectrometry techniques in the context of nanometrology
Published in Microelectronic engineering (01-08-2013)“…[Display omitted] ► CdS QDs smaller than 6nm diameter were produced by soft chemistry methods. ► MALDI-TOF mass spectrometry technique is applied to QDs for…”
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Physical and chemical analyses on single source precursor growth CdSe semiconductor nanomaterials
Published in Materials chemistry and physics (01-11-2010)“…CdSe nanocrystals (NCs) are synthesized by the single source precursor thermal method. The use of a temperature ramp allows to obtain faster elaboration and…”
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3
Piezomodulation of excitonic reflectance spectra in CuCl
Published in Journal of materials science (01-01-2005)“…We have investigated the piezoreflectance spectra of the 1s Z₃ and Z₁₂ excitons in single crystals of copper chloride CuCl at 95 K with linearly polarized…”
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Giant LO oscillation in the Zn1-xBex(Se, Te) multi-phonons percolative alloys
Published in Thin solid films (22-02-2004)“…We enrich a percolation-based picture for the basic understanding of the atypical two-modes behavior observed by Raman scattering in the Be-VI optical range of…”
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5
A percolation context evidenced by thermostimulated currents in oil-resin art media
Published in Applied physics. A, Materials science & processing (01-07-2004)“…Degradation over time of home-made thixotropic oil/resin mixtures, similar to those used as natural media by the art painter J.M. William Turner (1775--1851)…”
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Electronic structure of interdiffused GaInAs(P)/GaInAsP quantum wells
Published in Computational materials science (01-06-2000)“…Band structure calculations are performed by k·p theory on lattice-matched (LM) and strain-compensated (SC) interdiffused GaInAs(P)/GaInAsP quantum wells (QWs)…”
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7
Raman and photoreflectance studies of electronic band bending at ZnSe/GaAs interfaces
Published in Thin solid films (30-12-1998)“…Specific space charge zones on the substrate side of (100) ZnSe/GaAs interfaces, corresponding to strong band bending, were investigated within the vibrational…”
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8
Percolation effect in the vibrational spectra of mixed crystals with highly contrasted bond stiffness
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-08-2003)“…We present a detailed investigation by Raman spectroscopy of the zone-center longitudinal (LO) and transverse (TO) optical phonons from Zn 1− x Be x Te…”
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Vibrational Evidence for Percolative Behavior in ZnBeSe
Published in Physica status solidi. B. Basic research (01-01-2002)“…We propose a picture based on simple percolative concepts for the basic understanding of vibrational properties in the new attractive class of ternary…”
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10
Raman study of ZnxBe1-xSe solid solutions
Published in Optical materials (01-06-2001)Get full text
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11
Valence band structure of very narrow InGaAs/InP quantum wells
Published in Solid state communications (01-04-1996)“…We performed valence band structure calculations on very narrow lattice-matched GaInAs/InP quantum wells using the 6×6 Luttinger-Kohn Hamiltonian which…”
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Bi-modal Raman response of Be–Se vibration in Zn1−x−yMgyBexSe alloys
Published in Journal of alloys and compounds (17-11-2004)“…The longitudinal (LO) and transverse (TO) optical phonons of zincblende Zn1−x−yMgyBexSe with (x, y) ∼ 0.15 are identified by Raman scattering. BeSe bonds in…”
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13
LO multi-phonons cooperative phenomenon in ZnSe-BeSe mixed crystals
Published in The Journal of physics and chemistry of solids (01-11-2005)Get full text
Conference Proceeding -
14
Raman study of ZnxBe1−xSe alloy (100) epitaxial layers
Published in Applied physics letters (24-07-2000)“…Long wavelength longitudinal optical (LO) and transverse optical (TO) phonons of BeSe and ZnxBe1−xSe layers are identified in a wide composition range by using…”
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15
Optical characterization of strained InGaAs/InP quantum well structures
Published in ESSDERC '91: 21st European Solid State Device Research Conference (1991)“…The effects of strain on the optical properties of In 1-x Ga x As/InP multiple-quantum well structures grown by low pressure metal organic vapor phase epitaxy…”
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Conference Proceeding -
16
Percolation picture for long wavelength phonons in zinc blende alloys: application to GaInAs
Published in The Journal of physics and chemistry of solids (01-11-2005)“…We propose a ‘one bond→two modes’ model for the long wavelength optical phonons in random zinc-blende A x B 1− x C ternary alloys, based on the percolation…”
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Interface Properties of Strained InGaAs/InP Quantum Wells Grown by LP-MOVPE
Published in ESSDERC '92: 22nd European Solid State Device Research conference (1992)“…We have analysed ultrathin (5-10 monolayers) In 1-x Ga x As/InP (0.17 < x > 1) quantum wells grown by low-pressure metal organic vapour phase epitaxy using…”
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Conference Proceeding -
18
Piezoreflectance spectra of 1s Z12 exciton in CuBr
Published in Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy (01-01-2000)“…We have investigated the piezoreflectance spectra (deltaR/R) of the 1s Z12 exciton in single crystals of copper bromide CuBr at the temperature of 95 K with…”
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19
Investigation of residual impurity content in GaAs layers grown by VPE under very low pressure conditions
Published in Journal of electronic materials (1991)Get full text
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20
Band structure of very narrow InGaAs/InP quantum wells with gradual interface effects
Published in Superlattices and microstructures (01-01-1997)“…Band structure calculations are performed on narrow InGaAs/InP quantum wells (QWs) including gradual interface effects. Within the confines of the envelope…”
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