Search Results - "Laumer, Bernhard"

p‑GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity by Schuster, Fabian, Laumer, Bernhard, Zamani, Reza R, Magén, Cesar, Morante, Joan Ramon, Arbiol, Jordi, Stutzmann, Martin

“…In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface are presented. In contrast to homojunctions, an additional energy…”
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Intra-excitonic relaxation dynamics in ZnO by Chernikov, Alexej, Koch, Martin, Laumer, Bernhard, Wassner, Thomas A., Eickhoff, Martin, Koch, Stephan W., Chatterjee, Sangam

“…The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is…”
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Growth study of nonpolar Zn 1− x Mg x O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy by Laumer, Bernhard, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Günther, Vogel, Stephen, Gries, Katharina I., Volz, Kerstin, Eickhoff, Martin

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Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy by Laumer, Bernhard, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, nther, Vogel, Stephen, Gries, Katharina I, Volz, Kerstin, Eickhoff, Martin

“…Nonpolar Zn1-xMgxO epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was accomplished…”
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Growth study of nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy by Laumer, Bernhard, I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Schuster, Fabian, Stutzmann, Martin, Bergmaier, Andreas, Dollinger, Guenther, Vogel, Stephen, Gries, Katharina I., Volz, Kerstin, Eickhoff, Martin

“…Nonpolar Zn{sub 1-x}Mg{sub x}O epitaxial films were grown by plasma-assisted molecular beam epitaxy on a-plane ZnO substrates. A smooth surface morphology was…”
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