Search Results - "Laugt, S."

Stress and density of defects in Si-doped GaN by Chine, Z., Rebey, A., Touati, H., Goovaerts, E., Oueslati, M., Jani, B. El, Laugt, S.

“…We report a study by photoluminescence (PL), Raman scattering, and highly resolved X‐ray diffraction (HRXRD) of a series of Si‐doped n‐type GaN layers grown by…”
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Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111) by Natali, F., Semond, F., Massies, J., Byrne, D., Laügt, S., Tottereau, O., Vennéguès, P., Dogheche, E., Dumont, E.

“…We report on the influence of the structural properties on the refractive index of AlN films grown on Si(111) substrates by molecular-beam epitaxy using…”
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Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes by Tinjod, F., de Mierry, P., Lancefield, D., Bougrioua, Z., Laügt, S., Tottereau, O., Lorenzini, P., Chenot, S., Virey, E., Kokta, M.R., Stone-Sundberg, J.L., Pauwels, D.

“…A new substrate material, alumina-rich spinel, with better thermal and lattice match to GaN than sapphire, has been developed for growing high-quality…”
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In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs by REBEY, A, EL JANI, B, LEYCURAS, A, LAUGT, S, GIBART, P

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Optical Characterization of AlxGa1-xN Alloys (x < 0.7) Grown on Sapphire or Silicon by Leroux, M., Dalmasso, S., Natali, F., Helin, S., Touzi, C., Laügt, S., Passerel, M., Omnes, F., Semond, F., Massies, J., Gibart, P.

“…The optical properties of AlxGa1—xN samples (x < 0.7) have been studied by photoluminescence (PL) and reflectivity in the 10–300 K temperature range. Various…”
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Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs by Rebey, A., Chine, Z., Fathallah, W., El Jani, B., Goovaerts, E., Laugt, S.

“…Heavily C-doped GaAs epilayers have been grown by atmospheric pressure metalorganic vapor phase epitaxy with hole concentration ranging from 2×1019 to…”
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Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy by NATAF, G, LEROUX, M, LAÜGT, S. M, GIBART, P

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GaAs epitaxy by chemical vapour transport under high, earth and low-gravity conditions by Chevrier, Véronique, Launay, Jean-Claude, Laügt, Sophie, Viraphong, Oudomsack, Gibart, Pierre

“…Homoepitaxy of GaAs on hemispherical substrates have been realised by chemical vapour transport in four different gravity levels. Experiments have been…”
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Band-edge photoluminescence and reflectivity of nonpolar ( 11 2 ¯ 0 ) and semipolar ( 11 2 ¯ 2 ) GaN formed by epitaxial lateral overgrowth on sapphire by Gühne, T., Bougrioua, Z., Laügt, S., Nemoz, M., Vennéguès, P., Vinter, B., Leroux, M.

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Molecular beam epitaxy of [formula omitted] quantum well structures by Massies, J., Leroux, M., Martinez, Y., Vennegues, P., Laügt, S.

“…Molecular beam epitaxy (MBE) is used to grow GaSb Al x Ga 1 − x Sb quantum well (QW) structures on GaSb(001) substrates using both Sb 2 and Sb 4 molecules…”
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Molecular beam epitaxy of GaSb/A1xGa1-xSb quantum well structures by MASSIES, J, LEROUX, M, MARTINEZ, Y, VENNEGUES, P, LAÜGT, S

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