Search Results - "Lau, Kei May"

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics by Li, Qiang, Lau, Kei May

“…Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research…”
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Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology by Han, Hau-Vei, Lin, Huang-Yu, Lin, Chien-Chung, Chong, Wing-Cheung, Li, Jie-Ru, Chen, Kuo-Ju, Yu, Peichen, Chen, Teng-Ming, Chen, Huang-Ming, Lau, Kei-May, Kuo, Hao-Chung

“…Colloidal quantum dots which can emit red, green, and blue colors are incorporated with a micro-LED array to demonstrate a feasible choice for future display…”
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Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors by Liu, Zhaojun, Ma, Jun, Huang, Tongde, Liu, Chao, May Lau, Kei

“…In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility…”
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Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition by Lu, Xing, Ma, Jun, Jiang, Huaxing, May Lau, Kei

“…We report an investigation of in situ SiNx gate dielectric grown on AlN/GaN heterostructures by metal-organic chemical vapor deposition. It is revealed that…”
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Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers by Ma, Jun, Zhu, Xueliang, Wong, Ka Ming, Zou, Xinbo, Lau, Kei May

“…We report the growth of high crystalline quality GaN-based light emitting diodes (LEDs) on Si (111) substrates with AlN/GaN superlattice interlayer for both…”
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Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping by Liu, Chao, Liu, Zhaojun, Huang, Tongde, Ma, Jun, May Lau, Kei

“…We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of…”
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Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces by Ya-Ju Lee, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Kar Wai Ng, Kei May Lau, Zu-Po Yang, Chang, A.S.-P., Shawn-Yu Lin

“…We investigate the mechanism responding for performance enhancement of gallium nitride (GaN)-based light-emitting diode (LED) grown on chemical…”
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A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors by Xing Lu, Jun Ma, Yue, C. P., Kei May Lau

“…This letter presents the first fully integrated GaN-based Lamb-wave oscillator on Si substrate for high temperature operation. The 58 MHz oscillator prototype…”
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Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon by Li, Qiang, Ng, Kar Wei, Lau, Kei May

“…We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films…”
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High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown by Jiang, Huaxing, Zhu, Renqiang, Lyu, Qifeng, Lau, Kei May

“…In this letter, we report high-performance p-GaN HEMTs on Si with robust gate operation. For the first time, the preserved OFF-state drain blocking capability…”
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Selectively Grown III-V Lasers for Integrated Si-Photonics by Han, Yu, Xue, Ying, Yan, Zhao, Lau, Kei May

“…Epitaxially integrating III-V lasers with Si-photonics is the key for compact, efficient, and scalable photonic integrated circuits (PICs). Here we present an…”
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1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current by Jiang, Huaxing, Lyu, Qifeng, Zhu, Renqiang, Xiang, Peng, Cheng, Kai, Lau, Kei May

“…In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage (<inline-formula>…”
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1.55-μm Lasers Epitaxially Grown on Silicon by Shi, Bei, Han, Yu, Li, Qiang, Lau, Kei May

“…We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges…”
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Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance by Lu, Xing, Zhang, Xu, Jiang, Huaxing, Zou, Xinbo, Lau, Kei May, Wang, Gang

“…Herein, vertical Schottky barrier diodes (SBDs) based on a bulk β‐Ga2O3 substrate are developed. The devices feature an ion‐implanted planar edge termination…”
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Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric by Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

“…In this letter, we report the enhancement of ON- and OFF-state performance in vertical GaN trench MOSFETs through fabrication process optimization. The…”
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Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters by Cai, Yuefei, Zou, Xinbo, Liu, Chao, Lau, Kei May

“…This letter reports a novel voltage-controlled light emitter with fast switching speed and dimming capability using a monolithically integrated GaN HEMT-LED…”
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Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator by Li, Jie, Xue, Ying, Lin, Liying, Xing, Zengshan, Wong, Kam Sing, Lau, Kei May

“…To achieve on-chip lasers for Si-photonics, monolithic integration using selective epitaxy is a favorable option due to the unique defect engineering and…”
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Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs by Jiang, Huaxing, Liu, Chao, Chen, Yuying, Lu, Xing, Tang, Chak Wah, Lau, Kei May

“…In this paper, we present a systematic investigation of metal-organic chemical vapor depositiongrown in situ SiN as the gate dielectric and surface passivation…”
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Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs by Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

“…In this letter, we report the influence of p-GaN body doping concentration on the ON-state performance of vertical GaN trench MOSFETs. Decreasing the p-GaN…”
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Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology by Li, Peian, Zhang, Xu, Chong, Wing Cheung, Lau, Kei May

“…A monolithic thin film red light emitting diode (LED) active-matrix (AM) micro-display driven by a complementary metal-oxide semiconductor (CMOS) driver is…”
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