Search Results - "Larue, R.A."

A 2-20 GHz High-Gain Monolithic HEMT Distributed Amplifier by Bandy, S.G., Nishimoto, C.K., Yuen, C., Larue, R.A., Day, M., Eckstein, J., Tan, Z.C.H., Webb, C., Zdasiuk, G.A.

“…A low-noise 2-21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12+-0.5 dB of gain. This represents the…”
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A 920-1650-nm high-current photodetector by Davis, G.A., Weiss, R.E., LaRue, R.A., Williams, K.J., Esman, R.D.

“…We present novel (InGa)As photodetectors which exhibit 150 mA continuous photocurrent at 2 W power dissipation. A responsivity of 0.97 A/W at 1319 nm is…”
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A CCD frequency prescaler for broadband applications by Colbeth, R.E., LaRue, R.A.

“…A broadband, compact, and power-efficient frequency prescaler based on two-phase CCDs (CCD-FP) is described. It is similar in operation to flip-flop-based…”
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A 2 DEG-CCD frequency divider for microwave and millimeter wave applications by Colbeth, R.E., LaRue, R.A.

“…A frequency prescaler based on a 2 DEG-CCD (2-D electron gas charge-coupled device) technology, which has CCD gate length of 1 mu m, has been demonstrated at…”
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A 12-dB High-Gain Monolithic Distributed Amplifier by Larue, R.A., Bandy, S.G., Zdasiuk, G.A.

“…By reducing gate and drain line loss associated with the active elements of a distributed amplifier, significant gain improvements are possible. Loss reduction…”
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High-efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnects by Ludowise, M J, LaRue, R A, Borden, P G, Gregory, P E, Dietze, W T

“…A two-junction solar cell has been fabricated using an Al0.30Ga0.70As (1.82 eV) tap cell and a GaAs (1.43 eV) bottom cell. A processed metal interconnect is…”
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A 12-dB high-gain monolithic distributed amplifier by Larue, R.A., Bandy, S.G., Zdasiuk, G.A.

“…By reducing gate and drain line loss associated with the active elements of a distributed amplifier, significant gain improvements are possible. Loss reduction…”
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A 2-20 GHz high-gain monolithic HEMT distributed amplifier by Bandy, S.G., Nishimoto, C.K., Yuen, C., Larue, R.A., Day, M., Eckstein, J., Tan, Z.C.H., Webb, C., Zdasiuk, G.A.

“…A low-noise 2-21 GHz monolithic distributed amplifier utilizing 0.35-micrometer-gate-length HEMT devices has achieved 12 ± 0.5 dB of gain. This represents the…”
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A monolithic Ka-band HEMT low-noise amplifier by Yuen, C., Nishimoto, C.K., Glenn, M.W., Yi-Ching Pao, LaRue, R.A., Norton, R., Day, M., Zubeck, I., Bandy, S.G., Zdasiuk, G.A.

“…A monolithic, single-stage HEMT low-noise amplifier has been developed for the 20-40-GHz band. it includes a single 0.25- mu m-gate-length HEMT active device…”
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A distributed resistance model of an AlGaAs/GaAs concentrator solar cell illuminated with a curved groove Fresnel lens by LaRue, R.A., Borden, P.G., Gregory, P.E.

“…A distributed model of an AlGaAs/GaAs solar cell is coupled to a ray trace model of a curved groove fresnel lens to predict cell performance under sunlight…”
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A microwave 2DEG-CCD for high speed signal acquisition by LaRue, R.A., Colbeth, R.E., Davis, G.A., Yuen, C., Shih, C., Chung, Y., Weiss, R.E., Rossi, D.V.

“…A two-phase, 2DEG-CCD intended for signal acquisition and delay with sample rates in the 1 to 20 GHz range is described. Signal delay versus clock frequency…”
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A 920-1650-nm high-current photodiode by Davis, G.A., Weiss, R.E., LaRue, R.A., Williams, K.J., Esman, R.D.

“…Summary form only given. In this paper we describe an InGaAs-based photodiode, which has demonstrated continuous 140-mA output current at 2-W power dissipation…”
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Millimeter wave AlGaAs/InGaAs 2DEG-CCDs by Colbeth, R.E., LaRue, R.A., Davis, G.A., Yuen, C., Webb, C., Shih, C., Weiss, R.E.

“…A two-phase, InGaAs channel 2DEG-CCD (charge coupled device) intended for millimeter-wave signal acquisition and delay is presented. Signal delay versus clock…”
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