Search Results - "Larrey, V."

Interface water diffusion in silicon direct bonding by Tedjini, M., Fournel, F., Moriceau, H., Larrey, V., Landru, D., Kononchuk, O., Tardif, S., Rieutord, F.

“…The kinetics of water diffusion through the gap formed by the direct bonding of two silicon wafers is studied using two different techniques. X-ray…”
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ by Larrey, V., Villegier, J.-C., Salez, M., Miletto-Granozio, F., Karpov, A.

“…A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz…”
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Transmission measurements of multilayer interference filters developed for a full integration on Complementary Metal Oxide Semiconductor chips by Masarotto, L., Frey, L., Charles, M.L., Roule, A., Rodriguez, G., Souil, R., Morales, C., Larrey, V.

“…We present in this paper a method to measure the transmission spectra of optical filters composed of Complementary Metal-Oxide-Semiconductor (CMOS) compatible…”
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Development of millimeter wave integrated circulator based on barium ferrite by Dehlinger, A.-S., Le Berre, M., Bènevent, E., Hassane, H., Givord, D., Larrey, V., Vincent, D.

“…The development of telecommunications networks requires low-cost microwave and millimeter waves integrated devices. Among the microwave devices based on the…”
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Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films by Beche, E., Fournel, F., Larrey, V., Rieutord, F., Fillot, F.

“…SOI circuit exhibits excellent performance and rehabilitee but with the component miniaturization trend and the clock frequency increase, the self-heating…”
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Record Performance of 500°C Low-Temperature nMOSFETs for 3D Sequential Integration using a Smart CutTM Layer Transfer Module by Brunet, L., Reboh, S., Januel, T., Garros, X., Frutuoso, T. Mota, Casse, M., Sklenard, B., Brevard, L., Ribotta, M., Magalhaes-Lucas, A., Kanyandekwe, J., Hartmann, J.-M., Milesi, F., Mazen, F., Acosta-Alba, P., Kerdiles, S., Tavernier, A., Loup, V., Morales, C., Larrey, V., Fournel, F., Van-Jodin, L. Le, Leforestier, S., Rolland, E., Romano, G., Gaudin, G., Lugo, J., Lacord, J., Maitrejean, S., Arcamone, J., Batude, P., Radu, I., Fenouillet-Beranger, C., Andrieu, F.

“…We report record performances in Top-tier nMOSFETs fabricated by 3D sequential integration, as well as junction optimization guidelines to further optimize the…”
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Fabrication of NbN/AlN/NbN junctions with Al embedding circuits on Si membrane for 1.5 THz SIS mixers by Villégier, J.-C, Delaet, B, Larrey, V, Salez, M, Delorme, Y, Munier, J.-M

“…A process has been developed to fabricate NbN tunnel junctions and 1.5 THz SIS mixers with Al electrodes and Al/SiO 2/Al microstrip tuning circuits on thin Si…”
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Mechanical understanding of 100 mm InP and GaAs direct bonded heterostructure by Imbert, B., Blot, X., Tauzin, A., Salvetat, T., Lagoutte, E., Lecouvey, C., Chaira, T., Larrey, V., Bridoux, C., Fournel, F., Delaye, V., Papon, A.-M., Moriceau, H., Carron, V.

“…Indium phosphide (InP) and gallium arsenide (GaAs) 100 mm wafers were bonded by direct wafer bonding in a cleanroom environment. Unexpected high bow values…”
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Stripline Y-junction circulator using barium hexagonal ferrite thin films by Benevent, E., Rouiller, T., Sauviac, B., Larrey, V., Vincent, D., Madelaine, A.

“…In order to miniaturize a microwave passive component carrying out the function of circulation, several structures were considered. Among those, the stripline…”
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Breakthroughs in 3D Sequential technology by Brunet, L., Fenouillet-Beranger, C., Batude, P., Beaurepaire, S., Ponthenier, F., Rambal, N., Mazzocchi, V., Pin, J-B., Acosta-Alba, P., Kerdiles, S., Besson, P., Fontaine, H., Lardin, T., Fournel, F., Larrey, V., Mazen, F., Balan, V., Morales, C., Guerin, C., Jousseaume, V., Federspiel, X., Ney, D., Garros, X., Roman, A., Scevola, D., Perreau, P., Kouemeni-Tchouake, F., Arnaud, L., Scibetta, C., Chevalliez, S., Aussenac, F., Aubin, J., Reboh, S., Andrieu, F., Maitrejean, S., Vinet, M.

“…The 3D sequential integration, of active devices requires to limit the thermal budget of top tier processing to low temperature (LT) (i.e…”
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From Direct Bonding Mechanism to 3D Applications by Fournel, F., Moriceau, H., Larrey, V., Morales, C., Mauguen, C., Bridoux, C., Rieutord, F.

“…Nowadays Silicon direct wafer bonding is a mass production technology in many different applications. Starting around the sixties for industrial optical system…”
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Various GaAs to Si wafer bonding approaches for solar cells applications by Larrey, V., Vauche, L., Veinberg-Vidal, E., Tedjini, M., Morales, C., Foumel, F., Abadie, K.

“…Different GaAs//Si wafer bonding approaches are compared in order to fabricate III-V tandem solar cells. Bonding interface characteristics and electrical…”
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Low temperature direct bonding comparison by Fournel, F., Larrey, V., Morales, C., Bridoux, C., Moriceau, H., Rieutord, F.

“…Low temperature direct bonding technologies are now widely used for many applications. Mechanisms of some of these techniques will be presented. The different…”
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Die to wafer direct bonding: from fundamental mechanisms to optoelectronic and 3D applications by Fournel, F., Sanchez, L., Montmayeul, B., Castan, C., Laugier, M., Bally, L., Larrey, V., Mauguen, G., Cheramy, S., Jouve, A., Rolland, E., Morales, C., Szelag, B., Hassan, K., Adelimini, L., Rieutord, F.

“…Direct wafer bonding of wafers is now well establish. However in many interesting applications, direct bonding of die to wafer can lead to innovative devices…”
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First demonstration of a back-side integrated heterogeneous hybrid III-V/Si DBR lasers for Si-photonics applications by Durel, J., Ben Bakir, B., Jany, C., Cremer, S., Szelag, B., Bria, T., Larrey, V., Sanchez, L., Brianceau, P., Dallery, J.-A, Guiavarch, R., Card, T., Thibon, R., Broquin, J.-E, Bouf, F.

“…In this paper, we demonstrate for the first time the integration of a III-V/Si hybrid laser on the back-side of a SOI wafer. This integration allows preserving…”
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Extraction of material parameters in NbN multilayer technology for RSFQ circuits by Villegier, J.-C., Delaet, B., Larrey, V., Febvre, P., Tao, J.W., Angenieux, G.

“…NbN/MgO/NbN Josephson tunnel junctions and multilayers have been achieved on 3 inch. Si and SOI substrates in order to develop high-speed RSFQ logic gates with…”
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Back-side integration of Hybrid III-V on Silicon DBR lasers by Durel, J., Ben Bakir, B., Jany, C., Cremer, S., Hassan, K., Szelag, B., Bria, T., Larrey, V., Sanchez, L., Brianceau, P., Dallery, J-A, Guiavarch, R., Card, T., Thibon, R., Broquin, J-E, Boeuf, F.

“…In this paper we demonstrate the monolithic integration of a fully CMOS compatible hybrid DBR laser on the backside of a SOI wafer. This innovative approach…”
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Losses' origins in a 40 GHz stripline circulator with 10 μm thick barium hexagonal ferrite films by Benevent, E., Larrey, V., Vincent, D., Dehlinger, A.S.

“…DIOM Laboratory in collaboration with RADIALL designs and manufactures a 40 GHz circulator with 10 μm barium hexagonal ferrite films. The origin of losses in a…”
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