Search Results - "Larie, Aurelien"
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A Broadband 4.5-15.5-GHz SiGe Power Amplifier With 25.5-dBm Peak Saturated Output Power and 28.7% Maximum PAE
Published in IEEE transactions on microwave theory and techniques (01-05-2015)“…This paper presents the design of a broadband power amplifier (PA) in 130-nm SiGe BiCMOS technology. First, a single-stage broadband single-cell PA covering…”
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Journal Article -
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A 1.2V 20 dBm 60 GHz power amplifier with 32.4 dB Gain and 20 % Peak PAE in 65nm CMOS
Published in ESSCIRC 2014 - 40th European Solid State Circuits Conference (ESSCIRC) (01-09-2014)“…A 60 GHz highly linear Power Amplifier (PA) is implemented in 65-nm Low Power (LP) CMOS technology. The structure consists of four common-source…”
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Conference Proceeding
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Dual-mode power amplifier module with in-band reconfigurable output power for multifunctional radar and radio communication systems
Published in 2014 International Radar Conference (01-10-2014)“…This paper presents a concept of dual-mode power amplifier (PA) module with in-band reconfigurable gain and output power. In the first mode, a wideband PA…”
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Conference Proceeding -
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60GHz highly reliable power amplifier with 13dBm Psat 15% peak PAE in 65nm CMOS technology
Published in 2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01-01-2015)“…A 60 GHz highly reliable single-ended two-stage Power Amplifier (PA) is fabricated for the Wireless Personal Area Network (WPAN) applications. The PA consists…”
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Conference Proceeding -
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A highly linear bidirectional phase shifter based on vector modulator for 60GHz applications
Published in 2017 IEEE MTT-S International Microwave Symposium (IMS) (01-06-2017)“…This paper presents a phase shifter for beam steered systems at mmW frequencies. It is based on an I/Q hybrid transformer feeding a vector modulator that…”
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Conference Proceeding -
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2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC
Published in 2015 IEEE International Solid State Circuits Conference (ISSCC) (01-02-2015)“…The widespread deployment of high-data-rate wireless connectivity was enabled by the adoption of the WiGig (802.11ad) standard, consequently placing a…”
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Conference Proceeding Journal Article -
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A wideband 65nm CMOS transformer-coupled power amplifier for WiGig applications
Published in 2014 9th European Microwave Integrated Circuit Conference (01-10-2014)“…This paper describes a compact two-stage pseudodifferential cascode power amplifier implemented in 7-metal-layer 65nm Low-Power CMOS process. A cascode…”
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Conference Proceeding -
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A broad-band 55-nm BiCMOS T/R switch for mmW 5G small cell access point
Published in 2016 14th IEEE International New Circuits and Systems Conference (NEWCAS) (01-06-2016)“…This paper shows a passive broad-band SPDT T/R switch in 55-nm BiCMOS technology which covers most of the millimetre-wave bands considered for 5G (from 28 to…”
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Conference Proceeding -
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A compact 60GHz power amplifier using slow-wave transmission lines in 65nm CMOS
Published in 2013 European Microwave Integrated Circuit Conference (01-10-2013)“…This paper describes a 60GHz power amplifier implemented in 7-metal-layer 65nm Low-Power (LP) CMOS process. Matching networks with slow-wave transmission-lines…”
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Conference Proceeding