Search Results - "Largeau, L."

Surface-acoustic-wave-driven ferromagnetic resonance in (Ga,Mn)(As,P) epilayers by Thevenard, L., Gourdon, C., Prieur, J. Y., von Bardeleben, H. J., Vincent, S., Becerra, L., Largeau, L., Duquesne, J.-Y.

“…Surface acoustic waves (SAW) were generated on a thin layer of the ferromagnetic semiconductor (Ga,Mn)(As,P). The out-of-plane uniaxial magnetic anisotropy of…”
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GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity by Pelati, D., Patriarche, G., Mauguin, O., Largeau, L., Travers, L., Brisset, F., Glas, F., Oehler, F.

“…•First report of GaAs (111)A on Ge (111) using MBE.•No antiphase domain form during the growth of GaAs(111) A/Ge(111).•Twinned domains are the main defects…”
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Optical spectroscopy of two-dimensional layered (C_6H_5C_2H_4-NH_3)_2-PbI_4 perovskite by Gauthron, K., Lauret, J-S., Doyennette, L., Lanty, G., Al Choueiry, A., Zhang, S. J., Brehier, A., Largeau, L., Mauguin, O., Bloch, J., Deleporte, E.

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Confinement of superconducting fluctuations due to emergent electronic inhomogeneities by Carbillet, C, Caprara, S, Grilli, M, Brun, C, Cren, T, Debontridder, F, Vignolle, Baptiste, Tabis, Wojciech, Demaille, D, Largeau, L, Ilin, K, Siegel, M, Roditchev, D, Leridon, B

“…The microscopic nature of an insulating state in the vicinity of a superconducting state in the presence of disorder is a hotly debated question. While the…”
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Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography by Di Russo, E, Moyon, F, Gogneau, N, Largeau, L, Giraud, E, Carlin, J.-F, Grandjean, N, Chauveau, J. M, Hugues, M, Blum, I, Lefebvre, W, Vurpillot, F, Blavette, D, Rigutti, L

“…Ternary semiconductor alloys based on the A y B1–y C stoichiometry are widely employed in electronic devices, and their composition plays a key role in band…”
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Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma by Pelati, D., Mauguin, O., Largeau, L., Brisset, F., Glas, F., Oehler, F.

“…The fabrication of strongly-textured thin crystalline germanium layers on amorphous silica substrates can be achieved by aluminium induced crystallization…”
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Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE by Pantzas, K., El Gmili, Y., Dickerson, J., Gautier, S., Largeau, L., Mauguin, O., Patriarche, G., Suresh, S., Moudakir, T., Bishop, C., Ahaitouf, A., Rivera, T., Tanguy, C., Voss, P.L., Ougazzaden, A.

“…In this paper we demonstrate a solution to systematically obtain thick, single phase InGaN epilayers by MOVPE. The solution consists in periodically inserting…”
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Al5+αSi5+δN12, a new Nitride compound by Dagher, R., Lymperakis, L., Delaye, V., Largeau, L., Michon, A., Brault, J., Vennéguès, P.

“…The family of III-Nitride semiconductors has been under intensive research for almost 30 years and has revolutionized lighting applications at the dawn of the…”
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In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge by Pelati, D, Patriarche, G, Mauguin, O, Largeau, L, Brisset, F, Glas, F, Oehler, F

“…We use high-resolution optical microscopy to characterize in situ the processes at play during the Al-induced crystallization of amorphous Ge. In addition to…”
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Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure by Pateras, A. I., Allain, M., Godard, P., Largeau, L., Patriarche, G., Talneau, A., Pantzas, K., Burghammer, M., Minkevich, A. A., Chamard, V.

“…We report the 3D mapping of strain and tilts of crystal planes in an extended InP nanostructured layer bonded onto silicon, measured without sample…”
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Dual antiferromagnetic coupling at La0.67Sr0.33MnO3/SrRuO3 interfaces by Solignac, A, Guerrero, R, Gogol, P, Maroutian, T, Ott, F, Largeau, L, Lecoeur, Ph, Pannetier-Lecoeur, M

“…We have studied the magnetic hysteresis cycle of La0.67Sr0.33MnO3/SrRuO3 antiferromagnetically coupled bilayers, by magnetometry and polarized neutron…”
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Bloch oscillations of THz acoustic phonons in coupled nanocavity structures by Lanzillotti-Kimura, N D, Fainstein, A, Perrin, B, Jusserand, B, Mauguin, O, Largeau, L, Lemaître, A

“…Nanophononic Bloch oscillations and Wannier-Stark ladders have been recently predicted to exist in specifically tailored structures formed by coupled…”
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High quality tensile-strained n -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition by Jakomin, R., de Kersauson, M., El Kurdi, M., Largeau, L., Mauguin, O., Beaudoin, G., Sauvage, S., Ossikovski, R., Ndong, G., Chaigneau, M., Sagnes, I., Boucaud, P.

“…We show that high quality tensile-strained n -doped germanium films can be obtained on InGaAs buffer layers using metal-organic chemical vapor deposition with…”
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Molecular beam epitaxy of SrTiO3 on GaAs(001): GaAs surface treatment and structural characterization of the oxide layer by Louahadj, L., Bachelet, R., Regreny, P., Largeau, L., Dubourdieu, C., Saint-Girons, G.

“…Epitaxial SrTiO3 (STO) layers were grown on GaAs(001) substrates by molecular beam epitaxy. A Ti-based surface passivation was used prior to STO growth. The…”
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Sol–gel deposition of Pb(Zr,Ti)O3 on GaAs/InGaAs quantum well heterostructure via SrTiO3 templates: Stability of the semiconductor during oxide growth by Meunier, B., Largeau, L., Regreny, P., Bachelet, R., Vilquin, B., Penuelas, J., Saint-Girons, G.

“…Pb(Zr,Ti)O3 (PZT) layers were grown by sol–gel deposition on a InGaAs/GaAs quantum well heterostructure. Prior to PZT deposition, a thin SrTiO3 template is…”
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Silicon surface preparation for III-V molecular beam epitaxy by Madiomanana, K., Bahri, M., Rodriguez, J.B., Largeau, L., Cerutti, L., Mauguin, O., Castellano, A., Patriarche, G., Tournié, E.

“…We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ…”
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Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties by Ouerghi, A., Marangolo, M., Belkhou, R., El Moussaoui, S., Silly, M. G., Eddrief, M., Largeau, L., Portail, M., Fain, B., Sirotti, F.

“…Structural and electronic properties of epitaxial graphene on 3C-SiC(111) pseudosubstrate epilayers on silicon was investigated in detail by scanning tunneling…”
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Structural coherency of epitaxial graphene on 3C-SiC(111)epilayers on Si(111) by Ouerghi, A., Belkhou, R., Marangolo, M., Silly, M. G., El Moussaoui, S., Eddrief, M., Largeau, L., Portail, M., Sirotti, F.

“…Graphene has emerged as a promising nanoelectronic material in electronic devices applications and studying two-dimensional electron gases with relativistic…”
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Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon by Talneau, A., Roblin, C., Itawi, A., Mauguin, O., Largeau, L., Beaudouin, G., Sagnes, I., Patriarche, G., Pang, C., Benisty, H.

“…An oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells on Si showing an atomic-plane-thick reconstruction across the InP-Si interface and no…”
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Ferroelectric Pb(Zr,Ti)O3 epitaxial layers on GaAs by Louahadj, L., Le Bourdais, D., Largeau, L., Agnus, G., Mazet, L., Bachelet, R., Regreny, P., Albertini, D., Pillard, V., Dubourdieu, C., Gautier, B., Lecoeur, P., Saint-Girons, G.

“…Ferroelectric epitaxial Pb(Zr,Ti)O3 (PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The…”
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