High Speed Diamond Photoconductive Devices for UV Detection

High Speed Diamond Photoconductive Devices for UV Detection

Deep UV visible blind photoconductive devices can be fabricated on polycrystalline CVD diamond, a material that is intrinsically radiation hard and visible blind. However, the performance of detectors fabricated on as‐grown material is insufficient to meet the requirements of many laser‐based applic...

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Bibliographic Details
Published in:Physica status solidi. A, Applied research Vol. 185; no. 1; pp. 99 - 106
Main Authors: Whitfield, M.D., Lansley, St.P., Gaudin, O., McKeag, R.D., Rizvi, N., Jackman, R.B.
Format: Journal Article Conference Proceeding
Language:English
Published: Berlin WILEY-VCH Verlag Berlin GmbH 01-05-2001
WILEY‐VCH Verlag Berlin GmbH
Wiley-VCH
Subjects:
61.80.Ba
73.50.Pz
Applied sciences
Electronics
Exact sciences and technology
Lithography, masks and pattern transfer
Microelectronic fabrication (materials and surfaces technology)
Optoelectronic devices
Photodetectors (including infrared and CCD detectors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ultraviolet detector
Photoconducting device
Transient photoconductivity
DLTS
Polycrystal
Diamond
Experimental study
Chemical vapor deposition
High-speed optical techniques
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Summary:Deep UV visible blind photoconductive devices can be fabricated on polycrystalline CVD diamond, a material that is intrinsically radiation hard and visible blind. However, the performance of detectors fabricated on as‐grown material is insufficient to meet the requirements of many laser‐based applications. In this paper, it is shown that sequentially applied post‐growth treatments can progressively change both the gain and speed of these devices. Charge sensitive deep level transient spectroscopy (Q‐DLTS) and transient photoconductivity (TPC) has been used to study the effect of these treatments on the defect structure of our thin film diamond detector material. For the first time, we report the successful operation of a diamond photoconductive device with linear bias and fluence response characteristics at more than 1 kHz at 193 nm.
Bibliography:istex:CB80F4907DC1546D79539457522DD9BFA78C6645
ark:/67375/WNG-B7D5S604-L
ArticleID:PSSA99
ISSN:0031-8965
1521-396X
DOI:10.1002/1521-396X(200105)185:1<99::AID-PSSA99>3.0.CO;2-4