Search Results - "Lang, D. V."

Amorphouslike density of gap states in single-crystal pentacene by LANG, D. V, CHI, X, SIEGRIST, T, SERGENT, A. M, RAMIREZ, A. P

“…We show that optical and electrical measurements on pentacene single crystals can be used to extract the density of states in the highest occupied molecular…”
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Bias-dependent generation and quenching of defects in pentacene by LANG, D. V, CHI, X, SIEGRIST, T, SERGENT, A. M, RAMIREZ, A. P

“…We describe a defect generation phenomenon that is new to organic semiconductors. A defect in pentacene single crystals can be created by bias-stress and…”
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Field-effect transistor on pentacene single crystal by Butko, V. Y., Chi, X., Lang, D. V., Ramirez, A. P.

“…We report on the fabrication and characterization of field-effect transistors (FETs) on single-crystal pentacene. These FETs exhibit hole conductivity with…”
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Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes by Hsu, J. W. P., Manfra, M. J., Lang, D. V., Richter, S., Chu, S. N. G., Sergent, A. M., Kleiman, R. N., Pfeiffer, L. N., Molnar, R. J.

“…The reverse bias leakage current in macroscopic GaN Schottky diodes is found to be insensitive to barrier height. Using a scanning current–voltage microscope,…”
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Extrinsic optical recombination in pentacene single crystals:Evidence of gap states by He, Rui, Chi, X., Pinczuk, Aron, Lang, D. V., Ramirez, A. P.

“…Two luminescence bands observed in pentacene single crystals with different degrees of purity are identified as due to extrinsic optical emissions. A band at…”
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High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy by Manfra, M. J., Pfeiffer, L. N., West, K. W., Stormer, H. L., Baldwin, K. W., Hsu, J. W. P., Lang, D. V., Molnar, R. J.

“…We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN/GaN interface grown by…”
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Nature of the highly conducting interfacial layer in GaN films by Hsu, J. W. P., Lang, D. V., Richter, S., Kleiman, R. N., Sergent, A. M., Molnar, R. J.

“…Using several scanning probe techniques to investigate local electronic properties, we show that the GaN/sapphire interfacial region contains ⩾ ten times…”
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Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures by HSU, J. W. P, MANFRA, M. J, LANG, D. V, BALDWIN, K. W, PFEIFFER, L. N, MOLNAR, R. J

“…Scanning force microscopy was used to examine the surfaces of AlGaN /GaN heterostructures grown by molecular beam epitaxy (MBE) on GaN templates prepared by…”
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Simulation and characterization of the selective area growth process by Alam, M. A., People, R., Isaacs, E., Kim, C. Y., Evans-Lutterodt, K., Siegrist, T., Pernell, T. L., Vandenberg, J., Sputz, S. K., Chu, S. N. G., Lang, D. V., Smith, L., Hybertsen, M. S.

“…A simple three-dimensional vapor phase model is used to interpret and clarify the selective area growth process. The model predicts both normal and anomalous…”
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Measurement of the band gap of GexSi1-x/Si strained-layer heterostructures by LANG, D. V, PEOPLE, R, BEAN, J. C, SERGENT, A. M

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Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy by HSU, J. W. P, LANG, D. V, RICHTER, S, KLEIMAN, R. N, SERGENT, A. M, LOOK, D. C, MOLNAR, R. J

“…Using several derivatives of scanning force microscopy with conducting tips, we find direct evidence for the existence of a highly compensated donor impurity…”
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Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors by Lang, D. V., Logan, R. A.

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Oxidation mechanism of ionic transport of copper in SiO2 dielectrics by WILLIS, Brian G, LANG, David V

“…Secondary ion mass spectroscopy (SIMS) and electrical measurements have been used to investigate the mechanism of copper transport in dielectric materials…”
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Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors by Levine, B. F., Pinzone, C. J., Hui, S., King, C. A., Leibenguth, R. E., Zolnowski, D. R., Lang, D. V., Krautter, H. W., Geva, M.

“…A method of wafer bonding is demonstrated which significantly reduces the thermal expansion mismatch stress, by removing the substrate before the high…”
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Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability by KOPF, R. F, HAMM, R. A, RYAN, R. W, BURM, J, TATE, A, CHEN, Y.-K, GEORGIOU, G, LANG, D. V, REN, F

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Admittance spectroscopy measurement of band offsets in strained layers of InxGa1-xAs grown on InP by CAVICCHI, R. E, LANG, D. V, GERSHONI, D, SERGENT, A. M, VANDENBERG, J. M, CHU, S. N. G, PANISH, M. B

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Molecular-beam epitaxial growth of high electron mobility AlGaN/GaN heterostructures by Li, L. K., Turk, B., Wang, W. I., Syed, S., Simonian, D., Stormer, H. L., Lang, D. V.

“…We report the growth of high quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular-beam epitaxy. By inserting a low-temperature-grown…”
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Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As by Lang, D. V., Panish, M. B., Capasso, F., Allam, J., Hamm, R. A., Sergent, A. M., Tsang, W. T.

“…We discuss the use of admittance spectroscopy to measure the band offsets of semiconductor heterojunctions. By using this method to analyze the dynamic…”
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Modulation doping in GexSi1-x/Si strained layer heterostructures by PEOPLE, R, BEAN, J. C, LANG, D. V, SERGENT, A. M, STORMER, H. L, WECHT, K. W, LYNCH, R. T, BALDWIN, K

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Effects of defect clustering in neutron irradiated silicon by Seager, C.H., Fleming, R.M., Lang, D.V., Cooper, P.J., Bielejec, E., Campbell, J.M.

“…In situations where defects are clustered and the number of defects within a cluster approaches the doping level, shallow defects states may be only partially…”
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