Search Results - "Landis, G. R."

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  1. 1
    Carbon structural transitions and ohmic contacts on 4H-SiC

    Carbon structural transitions and ohmic contacts on 4H-SiC by WEIJIE LU, MITCHEL, William C, THORNTON, Candis A, LANDIS, G. R, COLLINS, W. Eugene

    Published in Journal of electronic materials (01-05-2003)
    “…The structural properties of sputtered carbon films on SiC are investigated using X-ray photoelectron spectroscopy (XPS) and Raman scattering. The as-deposited…”
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  2. 2
    Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures

    Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures by Elhamri, S, Mitchel, W C, Mitchell, W D, Berney, R, Landis, G R

    Published in Journal of electronic materials (01-04-2006)
    “…Magnetoresistance measurements were performed on van der Pauw shaped AlGaN/GaN heterostructures grown on either sapphire or silicon carbide. These measurements…”
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  3. 3
    Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC

    Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC by Elhamri, S., Mitchel, W. C., Mitchell, W. D., Landis, G. R., Berney, R., Saxler, A.

    Published in Applied physics letters (22-01-2007)
    “…Transport measurements were used to characterize AlGaN∕AlN∕GaN∕SiC. While the carrier concentration, n=9.2×1012cm−2, remained relatively unchanged from 300…”
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  4. 4
    Ohmic contact properties of Ni/C film on 4H-SiC

    Ohmic contact properties of Ni/C film on 4H-SiC by Lu, Weijie, Mitchel, W.C, Landis, G.R, Crenshaw, T.R, Collins, W.Eugene

    Published in Solid-state electronics (01-11-2003)
    “…Ohmic contact formation of Ni/C film on n-type 4H-SiC is investigated. A carbon interfacial layer between Ni film and SiC is used to improve ohmic contact…”
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  5. 5
    Electrical contact behavior of Ni/C60/4H–SiC structures

    Electrical contact behavior of Ni/C60/4H–SiC structures by Lu, Weijie, Mitchel, W. C., Landis, G. R., Crenshaw, T. R., Collins, W. Eugene

    “…A C60 interfacial layer between a Ni film and SiC improves the Ohmic contact properties significantly. The C60 film is deposited by the Langmuir–Blodgett…”
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  6. 6
    Study of the effects of an AlN interlayer on the transport propertiesof Al Ga N ∕ Al N ∕ Ga N heterostructures grown on SiC

    Study of the effects of an AlN interlayer on the transport propertiesof Al Ga N ∕ Al N ∕ Ga N heterostructures grown on SiC by Elhamri, S., Mitchel, W. C., Mitchell, W. D., Landis, G. R., Berney, R., Saxler, A.

    Published in Applied physics letters (26-01-2007)
    “…Transport measurements were used to characterize Al Ga N ∕ Al N ∕ Ga N ∕ Si C . While the carrier concentration, n = 9.2 × 10 12 cm − 2 , remained relatively…”
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  7. 7
    Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures: Group III Nitrides, SiC, and ZnO

    Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures: Group III Nitrides, SiC, and ZnO by ELHAMRI, S, MITCHEL, W. C, MITCHELL, W. D, BERNEY, R, LANDIS, G. R

    Published in Journal of electronic materials (2006)
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  8. 8
    AIRLINE AIRPORT CAPACITIES

    AIRLINE AIRPORT CAPACITIES by Landis, Reed G

    Published in The Journal of air law and commerce (01-01-1941)
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