Search Results - "Lan, C.W"

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  1. 1

    Revisiting the twinning mechanism in directional solidification of multi-crystalline silicon sheet by Lin, H.K., Lan, C.W.

    Published in Acta materialia (01-06-2017)
    “…The formation of the twin nucleus is an important phenomenon during the solidification of multi-crystalline silicon. However, the available model by Duffar and…”
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    Journal Article
  2. 2

    Recycling and reuse of kerf-loss silicon from diamond wire sawing for photovoltaic industry by Yang, H.L., Liu, I.T., Liu, C.E., Hsu, H.P., Lan, C.W.

    Published in Waste management (Elmsford) (01-02-2019)
    “…[Display omitted] •Silicon kerf wastes of diamond wire sawing from solar industry were studied.•Remove metals and C by acid leaching and calcination…”
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    Journal Article
  3. 3

    Twinning mechanism at three-grain tri-junction during directional solidification of multi-crystalline silicon by Jain, T., Lin, H.K., Lan, C.W.

    Published in Acta materialia (01-02-2018)
    “…We propose a model to explain the formation mechanism of twin grains at the three-grain tri-junction (3GTJ) on the growth interface during directional…”
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    Journal Article
  4. 4

    The emergence of high-performance multi-crystalline silicon in photovoltaics by Lan, C.W., Lan, A., Yang, C.F., Hsu, H.P., Yang, M., Yu, A., Hsu, B., Hsu, W.C., Yang, A.

    Published in Journal of crystal growth (15-06-2017)
    “…The emergence of the high-performance multi-crystalline silicon (HP mc-Si) in 2011 has made a significant impact to photovoltaic industry. In addition to the…”
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    Journal Article
  5. 5

    Silicon ingot casting using reusable silicon nitride crucibles made from diamond wire sawing kerf-loss silicon by Lan, A., Liu, C.E., Yang, H.L., Yu, H.T., Liu, I.T., Hsu, H.P., Lan, C.W.

    Published in Journal of crystal growth (01-11-2019)
    “…•The kerf-loss silicon refined by acid leaching.•RBSN crucibles made from refined kerf-loss silicon used for silicon casting.•The ingots had better lifetime…”
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    Journal Article
  6. 6

    A rapid thermal process for silicon recycle and refining from cutting kerf-loss slurry waste by Yang, C.F., Hsu, H.P., Lan, C.W.

    Published in Separation and purification technology (27-07-2015)
    “…A novel rapid thermal process to agglomerate Si in a couple minutes from the pretreated slurry waste, SiC particles and metals could be easily segregated to…”
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    Journal Article
  7. 7

    Evolution of grain structures during directional solidification of silicon wafers by Lin, H.K., Wu, M.C., Chen, C.C., Lan, C.W.

    Published in Journal of crystal growth (01-04-2016)
    “…The evolution of grain structures, especially the types of grain boundaries (GBs), during directional solidification is crucial to the electrical properties of…”
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    Journal Article
  8. 8

    Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidification by Wong, Y.T., Hsu, C., Lan, C.W.

    Published in Journal of crystal growth (01-02-2014)
    “…Development of grain structures of multi-crystalline silicon from small spherical seeds with random orientations in directional solidification was…”
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    Journal Article
  9. 9

    Grain control in directional solidification of photovoltaic silicon by Lan, C.W., Lan, W.C., Lee, T.F., Yu, A., Yang, Y.M., Hsu, W.C., Hsu, B., Yang, A.

    Published in Journal of crystal growth (01-12-2012)
    “…Directional solidification (DS) has become the major process for growing multi-crystalline silicon (mc-Si) for solar cells in the photovoltaic industry. The…”
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    Journal Article Conference Proceeding
  10. 10

    A multilayer nucleation model for twinning during directional solidification of multi-crystalline silicon by Lin, H.K., Lan, C.W.

    Published in Journal of crystal growth (15-11-2017)
    “…•Multilayer growth mode was used to explain twin nucleation during solidification.•Free energy of formation was reduced if the nucleus contains more than one…”
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    Journal Article
  11. 11

    In situ observation of crystal/melt interface and infrared measurement of temperature profile during directional solidification of silicon wafer by Liao, T.-J., Kang, Y.S., Lan, C.W.

    Published in Journal of crystal growth (01-10-2018)
    “…•Temperature profiles during melting/growth of Si wafer measured by a pyrometer.•Good agreements with the analytical model in thermal gradients and…”
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    Journal Article
  12. 12

    Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: Facet formation and grain competition by Lin, H.K., Lan, C.W.

    Published in Journal of crystal growth (01-09-2014)
    “…Adaptive phase field modeling is applied to simulate a directional solidification for silicon in three dimensions. Several parameters are considered for the…”
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    Journal Article Conference Proceeding
  13. 13

    Adaptive Phase-Field Modeling of Anisotropic Wetting with Line Tension at the Triple Junction by Yeh, S.Y, Lan, C.W

    Published in Langmuir (01-09-2015)
    “…Line tension could affect the contact angle at triple junction, especially in micro- to nanoscale wetting. We have developed an adaptive phase-field model to…”
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    Journal Article
  14. 14

    An enhanced cooling design in directional solidification for high quality multi-crystalline solar silicon by Li, T.F., Huang, H.C., Tsai, H.W., Lan, A., Chuck, C., Lan, C.W.

    Published in Journal of crystal growth (01-02-2012)
    “…An enhanced cooling design for nucleation was proposed for directional solidification based on the enhanced heat transfer through gas flow, and the effects of…”
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    Journal Article
  15. 15

    A novel approach for recycling of kerf loss silicon from cutting slurry waste for solar cell applications by Wang, T.Y., Lin, Y.C., Tai, C.Y., Sivakumar, R., Rai, D.K., Lan, C.W.

    Published in Journal of crystal growth (15-07-2008)
    “…A great challenge in recycling of silicon cutting kerf loss is the complete removal of silicon carbide particles. High-gravity centrifugation using a heavy…”
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    Journal Article
  16. 16

    The effect of silica nucleation layers on grain control of multi-crystalline silicon in directional solidification by Wong, Y.T., Hsieh, C.T., Lan, A., Hsu, C., Lan, C.W.

    Published in Journal of crystal growth (15-10-2014)
    “…The grain control in multi-crystalline silicon growth by directional solidification is crucial to the ingot quality. In order to study the nucleation and grain…”
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    Journal Article
  17. 17

    Recent progress of crystal growth modeling and growth control by Lan, C.W.

    Published in Chemical engineering science (01-04-2004)
    “…With the rapid growth of electronic and optoelectronic industry, the demand for crystal materials increased dramatically for the past two decades. The…”
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    Journal Article
  18. 18

    A simple anisotropic surface free energy function for three-dimensional phase field modeling of multi-crystalline crystal growth by Lin, H.K., Chen, C.C., Lan, C.W.

    Published in Journal of crystal growth (01-01-2013)
    “…Phase field modeling has emerged as a powerful tool in crystal growth simulation, but the description of the anisotropic function for three-dimensional (3D)…”
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    Journal Article Conference Proceeding
  19. 19

    Phase field modeling of facet formation during directional solidification of silicon film by Lin, H.K., Chen, H.Y., Lan, C.W.

    Published in Journal of crystal growth (01-01-2014)
    “…Adaptive phase field modeling is conducted to study the facet formation during directional solidification of silicon film. The necessary condition for…”
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    Journal Article Conference Proceeding
  20. 20

    Effect of crucible coating on the grain control of multi-crystalline silicon crystal growth by Tsai, H.W., Yang, M., Chuck, C., Lan, C.W.

    Published in Journal of crystal growth (15-01-2013)
    “…The effect of crucible coating on the nucleation and grain control of multi-crystalline silicon crystal growth was investigated. Four different firing…”
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    Journal Article