Search Results - "Lampin, E."

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations by Lampin, E., Nguyen, Q.-H., Francioso, P. A., Cleri, F.

“…We use molecular dynamics simulations to study the heat transfer at the interface between crystalline Si and amorphous silica. In order to quantify the thermal…”
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Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation: Insight from molecular dynamics simulation on amorphous silicon re-growth by Krzeminski, C., Lampin, E.

“…The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications…”
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Noradrenaline use for septic shock in children: doses, routes of administration and complications by Lampin, ME, Rousseaux, J, Botte, A, Sadik, A, Cremer, R, Leclerc, F

“…Aim:  To report our 10 year experience with noradrenaline use in children with septic shock focusing on doses, routes of administration and complications…”
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Patient Characteristics and Severity Trajectories in a Pediatric Intermediate Care Unit by Lampin, Marie E, Duhamel, Alain, Béhal, Hélène, Leteurtre, Stephane, Leclerc, Francis, Recher, Morgan

“…OBJECTIVESTo describe the characteristics of patients admitted to Pediatric Intermediate Care Units (PImCU) and to assess their illness severity…”
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Diffusion of boron in silicon: Compatibility of empirical molecular dynamics with continuum simulations by Cuny, V, Brulin, Q, Lampin, E, Lecat, E, Krzeminski, C, Cleri, F

“…The compatibility of atomistic simulations with continuum methods is tested by applying empirical molecular dynamics to the diffusion of a boron dopant atom in…”
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Impact of large angle tilt implantation on the threshold voltages of LDMOS transistors on SOI by Xu, Hui, Lampin, Evelyne, Dubois, Emmanuel, Bardy, Serge, Murray, Franck

“…A purely vertical (0°) implantation and a large-angle tilt implantation (LATID) (usually 45°) are used to form the short channel of an LDMOS transistor. A…”
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Optimisation of the parameters of an extended defect model applied to non-amorphizing implants by Lampin, E., Cristiano, F., Lamrani, Y., Connetable, D.

“…In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised…”
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Coupling of atom-by-atom calculations of extended defects with B kick-out equations: application to the simulation of boron ted by Lampin, E., Cristiano, F., Lamrani, Y., Colombeau, B.

“…We present simulations of B TED based on a complete calculation of the extended defect growth/shrinkage during annealing. The Si self-interstitial…”
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Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si by Lampin, E., Ortiz, C.J., Cowern, N.E.B., Colombeau, B., Cristiano, F.

“…A method is proposed to reduce the number of equations and the calculation time of a one-step modeling of the kinetics of extended defects formed after ion…”
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Modeling of the kinetics of dislocation loops by Lampin, E., Senez, V.

“…The precipitation of excess silicon interstitials into dislocation loops is modeled. This situation occurs when an amorphous layer is created at the surface in…”
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Accurate modeling of large angle tilt and pure vertical implantations: application to the simulation of n- and p-LDMOS backgates by Lampin, E., Dubois, E., Hui Xu, Bardy, S., Murray, F.

“…The lateral and vertical extensions of the backgate of complementary laterally diffused metal oxide semiconductor (LDMOS) are simulated. The importance of…”
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Depth dependence of defect evolution and TED during annealing by Colombeau, B., Cowern, N.E.B., Cristiano, F., Calvo, P., Lamrani, Y., Cherkashin, N., Lampin, E., Claverie, A.

“…A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two…”
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Modelisation of extended defects to simulate the transient enhanced diffusion of boron by LAMPIN, E, SENEZ, V, CLAVERIE, A

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Room temperature platinum nano-strip bolometer for mm & submm-wave applications by Desmet, Y., Thomas, B., Peytavit, E., Pavanello, F., Okada, E., Lampin, E., Walber, A., Ceru, J., Graux, F., Ducatteau, D., Lampin, J.-F

“…We demonstrate a W-band bolometer based on a platinum nano-strip which is integrated with a waveguide probe on a polymer substrate. We measure a high thermal…”
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Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation by Krzeminski, Christophe, Lampin, Evelyne

“…The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications…”
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Use of midazolam for refractory status epilepticus in children by Lampin, M-E, Dorkenoo, A, Lamblin, M-D, Botte, A, Leclerc, F, Auvin, S

“…Morbidity and mortality are high in children with refractory status epilepticus (RSE). Here, we assess the efficacy of midazolam for RSE in children. This was…”
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Answer to Lynøe: Interesting data about confessions and abusive head trauma, but suboptimal analysis by Vinchon, Matthieu, Karnoub, Mélodie-Anne, Noulé, Nathalie, Lampin, Marie-Emilie

“…Summary The authors of the cited paper respond to the critics formulated by a Swedish leading expert regarding methodology shortcomings of our study “Confessed…”
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Utilisation du midazolam dans l’état de mal épileptique réfractaire de l’enfant by Lampin, M.-E., Dorkenoo, A., Lamblin, M.-D., Botte, A., Leclerc, F., Auvin, S.

“…L’état de mal épileptique (EME) réfractaire chez l’enfant est grevé d’une importante mortalité et morbidité. L’objectif était d’évaluer l’efficacité du…”
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Optimisation of the parameters of an extended defects model applied to non-amorphising implants by Lampin, E., Cristianio, F., Lamrani, Y., Connetable, D.

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On the modeling of transient diffusion and activation of boron during post-implantation annealing by Pichler, P., Ortiz, C.J., Colombeau, B., Cowern, N.E.B., Lampin, E., Claverie, A., Cristiano, F., Lerch, W., Paul, S.

“…A quantitative description of the transient diffusion and activation of boron during post-implantation annealing steps is one of the most challenging tasks. In…”
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