Search Results - "Lam, J.B."

MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence by Shee, Sang Kee, Kwon, Y.H, Lam, J.B, Gainer, G.H, Park, G.H, Hwang, S.J, Little, B.D, Song, J.J

“…Optically pumped stimulated emission (SE) and time-resolved photoluminescence (TRPL) of InGaN/(In)GaN multiple quantum wells (MQWs) grown by low-pressure…”
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Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE) by Tsvetkov, D., Melnik, Yu, Davydov, A., Shapiro, A., Kovalenkov, O., Lam, J.B., Song, J.J., Dmitriev, V.

“…Multilayer AlGaN/GaN epitaxial structures were grown on SiC by HVPE method. Characterization of the grown structures was performed using SEM, SIMS, mercury…”
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A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films by Cho, Yong-Hoon, Schmidt, T.J., Gainer, G.H., Lam, J.B., Song, J.J., Keller, S., Mishra, U.K., DenBaars, S.P., Yang, W., Kim, D.S., Jhe, W.

“…We have investigated the optical properties of InGaN, GaN, and AlGaN epilayers using photoluminescence (PL), PL excitation, time‐resolved PL, and optically…”
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Temperature Dependence of Transmission and Emission Spectra in MOCVD-Grown AlGaN Ternary Alloys by Cho, Yong-Hoon, Gainer, G.H., Lam, J.B., Song, J.J., Yang, W.

“…Optical absorption, emission, and carrier recombination characteristics of AlxGa1—xN epilayers (x = 0.17, 0.26, and 0.33) were systematically studied by means…”
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The Excitonic Optical Stark Effect in GaN by Choi, C. K., Chang, Yia-Chung, Lam, J.B., Gainer, G.H., Shee, S. K., Krasinski, J. S., Song, J.J.

“…The dynamic Stark effect of excitons in GaN at 10 K with excitation well below the excitonic resonances was studied using nondegenerate femtosecond pump–probe…”
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Optical Properties and Lasing in (In, Al)GaN Structures by Bidnyk, S., Gainer, G.H., Shee, S.K., Lam, J.B., Little, B.D., Sugahara, T., Krasinski, J., Kwon, Y.H., Park, G.H., Hwang, S.J., Song, J.J., Bulman, G.E., Kong, H.S.

“…We achieved low‐threshold ultra‐violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes…”
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Study of gain mechanisms in Al/sub x/Ga/sub 1-x/N in the temperature range of 30 to 300 K by Lam, J.B., Bidnyk, S., Gainer, G.H., Little, B.D., Song, J.J., Yang, W.

“…Summary form only given. Due to its optical emission wavelength in the near to deep UV, Al/sub x/Ga/sub 1-x/N deserves much attention for its potential UV…”
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GaN/AlGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency by Gainer, G.H., Kwon, Y.H., Lam, J.B., Kalashyan, A., Song, J.J., Choi, S.C., Yang, G.M.

“…Summary form only given. GaN active medium structures are attracting much attention for the development of UV laser diodes (LDs) with emission wavelengths…”
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Microcavity-based semiconductor lasers for near- and deep-UV applications by Bidnyk, S., Lam, J.B., Little, B.D., Kwon, Y.H., Song, J.J., Bulman, G.E., Kong, H.W.

“…Summary form only given. We achieved ultraviolet lasing in optically pumped GaN/AlGaN separate confinement heterostructures (SCHs) with remarkably low lasing…”
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Comparison of spontaneous and stimulated emission from UV-blue photonic materials by Little, B.D., Yong-Hoon Cho, Schmidt, T.J., Gainer, G.H., Lam, J.B., Song, J.J., Yang, W., Keller, S., Mishra, U.K., DenBaars, S.P., Jhe, W.

“…We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence…”
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