Search Results - "Lajn, A."

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films by Lorenz, M., Lajn, A., Frenzel, H., v. Wenckstern, H., Grundmann, M., Barquinha, P., Martins, R., Fortunato, E.

“…We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All…”
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Anionic and cationic substitution in ZnO by von Wenckstern, H., Schmidt, H., Brandt, M., Lajn, A., Pickenhain, R., Lorenz, M., Grundmann, M., Hofmann, D.M., Polity, A., Meyer, B.K., Saal, H., Binnewies, M., Börger, A., Becker, K.-D., Tikhomirov, V.A., Jug, K.

“…In this contribution we review the impact of anionic and cationic substitutions on the electronic properties of bulk ZnO crystals, thin films and ZnO powders…”
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Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO by Lajn, A., Schmidt, M., von Wenckstern, H., Grundmann, M.

“…The authors report on the fabrication of transparent rectifying contacts by reactive sputtering of silver or platinum on heteroepitaxially grown zinc oxide…”
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ZnO-based metal-semiconductor field-effect transistors on glass substrates by Frenzel, H., Lorenz, M., Lajn, A., von Wenckstern, H., Biehne, G., Hochmuth, H., Grundmann, M.

“…We investigate the influence of quartz glass and borosilicate glass substrates on the electrical properties of ZnO-based metal-semiconductor field-effect…”
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Light and Temperature Stability of Fully Transparent ZnO-Based Inverter Circuits by Lajn, A, Diez, T, Schein, F, Frenzel, H, von Wenckstern, H, Grundmann, M

“…The stability of the figures of merit of transparent inverter circuits at temperatures up to 150°C and under illumination by light in the visible spectral…”
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Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films by Lajn, A., von Wenckstern, H., Benndorf, G., Dietrich, C.P., Brandt, M., Biehne, G., Hochmuth, H., Lorenz, M., Grundmann, M.

“…Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 × 10 −4 –0.1 mbar) were investigated…”
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ZnO metal-semiconductor field-effect transistors with Ag-Schottky gates by Frenzel, H., Lajn, A., Brandt, M., Wenckstern, H. von, Biehne, G., Hochmuth, H., Lorenz, M., Grundmann, M.

“…Metal-semiconductor field-effect transistors (MESFETs) were fabricated by reactive dc sputtering of Ag-Schottky gate contacts on ZnO thin-film channels grown…”
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High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology by Frenzel, H., Schein, F., Lajn, A., von Wenckstern, H., Grundmann, M.

“…We report on the design and fabrication of ZnO-based integrated inverters consisting of normally-on metal-semiconductor field-effect transistors and AgxO…”
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ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates by Frenzel, H., Lajn, A., von Wenckstern, H., Biehne, G., Hochmuth, H., Grundmann, M.

“…Metal-semiconductor field-effect transistors (MESFETs) were fabricated by reactive dc sputtering of either Ag, Pt, Pd, and Au as Schottky gate contacts on ZnO…”
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Erratum to: Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO by Lajn, A., Schmidt, M., von Wenckstern, H., Grundmann, M.

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Transparent Rectifying Contacts for Visible-Blind Ultraviolet Photodiodes Based on ZnO: Group III Nitrides, SiC and ZnO by LAJN, A, SCHMIDT, M, VON WENCKSTERN, H, GRUNDMANN, M

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High-gain integrated inverters based on ZnO metal-semiconductorfield-effect transistor technology by Frenzel, H., Schein, F., Lajn, A., von Wenckstern, H., Grundmann, M.

“…We report on the design and fabrication of ZnO-based integrated inverters consisting of normally-on metal-semiconductor field-effect transistors and Ag x O…”
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Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films: Group III Nitrides, Silicon Carbide, and Zinc Oxide by LAJN, A, VON WENCKSTERN, H, BENNDORF, G, DIETRICH, C. P, BRANDT, M, BIEHNE, G, HOCHMUTH, H, LORENZ, M, GRUNDMANN, M

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ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates by FRENZEL, H, LAJN, A, VON WENCKSTERN, H, BIEHNE, G, HOCHMUTH, H, GRUNDMANN, M

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