Search Results - "Laino, V"

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  1. 1

    Broadband blue superluminescent light-emitting diodes based on GaN by Feltin, E., Castiglia, A., Cosendey, G., Sulmoni, L., Carlin, J.-F., Grandjean, N., Rossetti, M., Dorsaz, J., Laino, V., Duelk, M., Velez, C.

    Published in Applied physics letters (24-08-2009)
    “…We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region…”
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    Journal Article
  2. 2

    Microscopic analysis of optical gain in InGaN∕GaN quantum wells by Witzigmann, B., Laino, V., Luisier, M., Schwarz, U. T., Feicht, G., Wegscheider, W., Engl, K., Furitsch, M., Leber, A., Lell, A., Härle, V.

    Published in Applied physics letters (09-01-2006)
    “…A microscopic theory is used to analyze optical gain in InGaN∕GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on…”
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    Journal Article
  3. 3

    Analysis of temperature-dependent optical gain in GaN-InGaN quantum-well structures by Witzigmann, B., Laino, V., Luisier, M., Schwarz, U.T., Fischer, H., Feicht, G., Wegscheider, W., Rumbolz, C., Lell, A., Harle, V.

    Published in IEEE photonics technology letters (01-08-2006)
    “…The temperature dependent spectral gain in InGaN-GaN multiple quantum-well structures with 10% In content is investigated. Mode gain is measured in a…”
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    Journal Article
  4. 4

    Substrate Modes of (Al,In)GaN Semiconductor Laser Diodes on SiC and GaN Substrates by Laino, V., Roemer, F., Witzigmann, B., Lauterbach, C., Schwarz, U.T., Rumbolz, C., Schillgalies, M.O., Furitsch, M., Lell, A., Harle, V.

    Published in IEEE journal of quantum electronics (01-01-2007)
    “…In semiconductor laser diodes layers with high refractive index can act as parasitic waveguides and cause severe losses to the optical mode propagating in the…”
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    Journal Article
  5. 5
  6. 6

    Earthquake Magnitude Estimation with Single Seismic Station using Deep Learning by Carratu, Marco, Gallo, Vincenzo, Laino, Valter, Paciello, Vincenzo, Espirito-Santo, Antonio, Shallari, Irida

    “…Prediction and early estimation of earthquake hazards have always been a subject of research. Indeed, the ability to promptly understand the energy released by…”
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    Conference Proceeding
  7. 7

    Microscopic analysis of optical gain in In Ga N ∕ Ga N quantum wells by Witzigmann, B., Laino, V., Luisier, M., Schwarz, U. T., Feicht, G., Wegscheider, W., Engl, K., Furitsch, M., Leber, A., Lell, A., Härle, V.

    Published in Applied physics letters (11-01-2006)
    “…A microscopic theory is used to analyze optical gain in In Ga N ∕ Ga N quantum wells (QW). Experimental data are obtained from Hakki-Paoli measurements on…”
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    Journal Article
  8. 8

    Design and implementation of a wireless instrument adapter by Laino, Kaori V, Saathoff, Thore, Savarimuthu, Thiusius R, Schwaner, Kim Lindberg, Gessert, Nils, Schlaefer, Alexander

    Published 16-04-2018
    “…The evaluation of new methods for control and manipulation in minimally invasive robotic surgery requires a realistic setup. To decouple the evaluation of…”
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    Journal Article
  9. 9

    Super-Luminescent LEDs-Modeling of Emission Spectra and LI-Characteristics by Loeser, M., Occhi, L., Laino, V., Velez, C., Rezzonico, R., Witzigmann, B.

    “…A novel model is presented that accounts for amplified spontaneous emission (ASE) in super-luminescent light-emitting diodes (SLEDs) and semiconductor optical…”
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    Conference Proceeding
  10. 10

    A TCAD calibration methodology by Laino, V., Pfeiffer, M., Witzig, A., Fichtner, W.

    “…A systematic methodology for the calibration of laser simulation environment is presented. This allows device designers to obtain good agreement between…”
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    Conference Proceeding
  11. 11

    TCAD simulation of optical far field for an edge emitting semiconductor laser by Laino, V., Witzigmann, B., Pfeiffer, M., Mueller, J., Schmidt, B.

    “…This work presents a microscopic 2-dimensional TCAD (technology computer aided design) simulation of an edge-emitting laser (EEL), with the objective to…”
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    Conference Proceeding
  12. 12

    Study of substrate modes in a (Al,In)GaN/SiC semiconductor laser using finite element approach by Laino, V., Witzigmann, B., Streiff, M., Bregy, A., Witzig, A., Schwarz, U.T.

    “…Penetration of the waveguide mode into the substrate has some effects in Nitride-based semiconductor lasers grown on Silicon Carbide while it is usually not a…”
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    Conference Proceeding