Search Results - "Lai, Shankun"
-
1
Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation
Published in Nanomaterials (Basel, Switzerland) (11-02-2022)“…Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures…”
Get full text
Journal Article -
2
A simulation result of trapped charge in PPD CIS induced by total ionizing dose effect
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-05-2023)“…This paper describes a method for simulating the total ionizing dose (TID) radiation effect of a PPD CMOS image sensor (CIS) using TCAD. This paper takes the…”
Get full text
Journal Article -
3
Radiation effects in GaInP/GaAs/Ge triple junction solar cells irradiated by 1 MeV and 10 MeV electrons
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-12-2021)“…The experiments of the GaInP/GaAs/Ge triple junction solar cells (3JSCs) irradiated by 1MeV and 10 MeV electrons at the electron accelerator facility were…”
Get full text
Journal Article -
4
-
5
The influence of temperature and energy on defect evolution and clustering during cascade in GaAs
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01-09-2021)“…Molecular dynamics (MD) is used to simulate cascade collision in gallium arsenide (GaAs) under different temperatures (300–900 K). During the entire…”
Get full text
Journal Article -
6
Numerical simulation of the primary displacement damage in GaAs1−xNx with low nitrogen atomic content
Published in Computational materials science (01-12-2021)“…[Display omitted] Molecular dynamics (MD) simulation is conducted to investigate the primary displacement damage of GaAs1−xNx as a function of nitrogen atoms…”
Get full text
Journal Article -
7
Radiation effects in backside-illuminated CMOS image sensors irradiated by high energy neutrons at CSNS-WNS
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01-03-2022)“…We present experiments with BSI-CISs (backside-illuminated CMOS image sensors) conducted at the WNS (white neutron source) at CSNS (China spallation neutron…”
Get full text
Journal Article -
8
Numerical simulation of the primary displacement damage in GaAs1−N with low nitrogen atomic content
Published in Computational materials science (01-12-2021)Get full text
Journal Article