Search Results - "Lai, Shankun"

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  1. 1

    Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation by Jia, Tongxuan, Wang, Zujun, Tang, Minghua, Xue, Yuanyuan, Huang, Gang, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Gou, Shilong

    Published in Nanomaterials (Basel, Switzerland) (11-02-2022)
    “…Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures…”
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    Journal Article
  2. 2

    A simulation result of trapped charge in PPD CIS induced by total ionizing dose effect by Lai, Shankun, Wang, Zujun, Huang, Gang, Xue, Yuanyuan, Nie, Xu, Tang, Ning, Yan, Shixing, Wang, Xinghong

    “…This paper describes a method for simulating the total ionizing dose (TID) radiation effect of a PPD CMOS image sensor (CIS) using TCAD. This paper takes the…”
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    Journal Article
  3. 3

    Radiation effects in GaInP/GaAs/Ge triple junction solar cells irradiated by 1 MeV and 10 MeV electrons by Wang, Zujun, Xue, Yuanyuan, Yang, Xie, Cui, Xinyu, Jia, Tongxuan, Jiao, Qianli, Nie, Xu, Lai, Shankun

    “…The experiments of the GaInP/GaAs/Ge triple junction solar cells (3JSCs) irradiated by 1MeV and 10 MeV electrons at the electron accelerator facility were…”
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    Journal Article
  4. 4
  5. 5

    The influence of temperature and energy on defect evolution and clustering during cascade in GaAs by Jia, Tongxuan, Wang, Zujun, Xue, Yuanyuan, Jiao, Qianli, Yang, Xie, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Liu, Minbo

    “…Molecular dynamics (MD) is used to simulate cascade collision in gallium arsenide (GaAs) under different temperatures (300–900 K). During the entire…”
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    Journal Article
  6. 6

    Numerical simulation of the primary displacement damage in GaAs1−xNx with low nitrogen atomic content by Jia, Tongxuan, Wang, Zujun, Xue, Yuanyuan, Jiao, Qianli, Yang, Xie, Nie, Xu, Lai, Shankun, Ma, Wuying, He, Baoping, Liu, Minbo

    Published in Computational materials science (01-12-2021)
    “…[Display omitted] Molecular dynamics (MD) simulation is conducted to investigate the primary displacement damage of GaAs1−xNx as a function of nitrogen atoms…”
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    Journal Article
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