Search Results - "Lai, Peter T."

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode by Zheng, Ya Liang, Tang, Wing Man, Chau, Tony, Kin On Sin, Johnny, Lai, Peter T.

“…A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical…”
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Impact of Gate-Dielectric Annealing Temperature on Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistors by Sun, Hao, Su, Hui, Lai, Peter T.

“…InGaZnO (IGZO) thin-film transistors (TFTs) with NdHfO gate dielectric have been fabricated with different gate-dielectric annealing temperatures (room…”
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Remote Phonon Scattering in InGaZnO Thin-Film Transistor with Double-Layered High-κ Gate Dielectric by Sun, Hao, Ma, Yuanxiao, Liu, Zichui, Lai, Peter T.

“…Double-layered high-κ gate dielectric (high-κ NdHfO on low-κ SiO 2 ) and p-Si gate electrodes with different doping concentrations are employed in the…”
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Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor by Jiaqi Song, Chuanyu Han, Lai, Peter T.

“…An amorphous InGaZnO thin-film transistor with high-k Nb 2 O 5 as gate dielectric is prepared for the first time, showing typical field-effect characteristics…”
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Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric by Ling Xuan Qian, Lai, Peter T.

“…Fluorinated amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been studied by treating InGaZnO film in a CHF 3 /O 2 plasma. The saturation…”
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A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor by Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi-Ming Che, Lai, Peter T.

“…The effects of La incorporation in three transition-metal (TM = Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor (OTFT) have…”
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High-Performance Pentacene Thin-Film Transistor With High- \kappa HfLaON as Gate Dielectric by Chuan Yu Han, Wing Man Tang, Cheung Hoi Leung, Chi Ming Che, Lai, Peter T.

“…Pentacene organic thin-film transistor (OTFT) using high- k HfLaON gate dielectric is proposed, and the effects of varying its nitrogen content are studied…”
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Improved Electrical Uniformity and Performance via Low-Cost Hybrid Wet Transfer Method for Van Der Waals Source/Drain Contact Formation in MoS } Field-Effect Transistors by Deng, Yu Heng, Su, Rui, Jiang, Weichao, Sun, Hao, Wang, Qing He, Liu, Lu, Xu, Jingping, Lai, Peter T.

“…A hybrid wet transfer method for the fabrication of MoS<inline-formula> <tex-math notation="LaTeX">_{\text{2}}</tex-math> </inline-formula> field-effect…”
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Hysteresis-Free High-Performance Pentacene Organic Thin-Film Transistor by Sputtering Amorphous Barium Titanate as Ultrathin High-k Gate Dielectric by Wang, Qing He, Heng Deng, Yu, Sun, Hao, Ping Xu, Jing, Lai, Peter T.

“…In this work, low-voltage pentacene organic thin-film transistors (OTFTs) are fabricated using 12-nm ultrathin barium titanate (BTO) gate dielectric sputtered…”
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Comparative Study of Nb 2 O 5 , NbLaO, and La 2 O 3 as Gate Dielectric of InGaZnO Thin-Film Transistor by Song, Jiaqi, Han, Chuanyu, Lai, Peter T.

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Capacitance effect on the oscillation and switching characteristics of spin torque oscillators by Zeng, Tui, Zhou, Yan, Leung, Chi Wah, Lai, Peter PT, Pong, Philip WT

“…We have studied the capacitance effect on the oscillation characteristics and the switching characteristics of the spin torque oscillators (STOs). We found…”
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor by Hf Incorporation in La2O3 Gate Dielectric by Song, J. Q., Qian, L. X., Lai, Peter T.

“…The effects of Hf incorporation in La 2 O 3 gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. With an…”
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Auditory Learning and Adaptation after Cochlear Implantation: A Preliminary Study of Discrimination and Labeling of Vowel Sounds by Cochlear Implant Users by SVIRSKY, Mario A, SILVEIRA, Alicia, SUAREZ, Hamlet, NEUBURGER, Heidi, LAI, Ted T, SIMMONS, Peter M

“…This study examined two possible reasons underlying longitudinal increases in vowel identification by cochlear implant users: improved labeling of vowel sounds…”
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Improved Performance of Amorphous InGaZnO Thin-Film Transistor by Hf Incorporation in La 2 O 3 Gate Dielectric by Song, J. Q., Qian, L. X., Lai, Peter T.

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