Search Results - "Lai, P.T."

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  1. 1

    hydrogen/methane sensor based on niobium tungsten oxide nanorods synthesised by hydrothermal method by Yu, J, Wen, H, Shafiei, M, Field, M.R, Liu, Z.F, Wlodarski, W, Motta, N, Li, Y.X, Kalantar-zadeh, K, Lai, P.T

    “…An investigation on hydrogen and methane sensing performance of hydrothermally formed niobium tungsten oxide nanorods employed in a Schottky diode structure is…”
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  2. 2

    Geometrical Shaping of InGaN Light-Emitting Diodes by Laser Micromachining by Fu, W.Y., Hui, K.N., Wang, X.H., Wong, K., Lai, P.T., Choi, H.W.

    Published in IEEE photonics technology letters (01-08-2009)
    “…Geometrical shaping of InGaN light-emitting diodes (LEDs) by laser micromachining is introduced. The sapphire substrate is shaped with inclined sidewalls at…”
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  3. 3

    A Reliability Study on Green InGaN-GaN Light-Emitting Diodes by Li, Z.L., Lai, P.T., Choi, H.W.

    Published in IEEE photonics technology letters (01-10-2009)
    “…In this letter, the reliability of green InGaN-GaN light-emitting diodes (LEDs) has been analyzed by correlating the defect density of wafers with various…”
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  4. 4

    Conduction mechanisms in MOS gate dielectric films by Yang, B.L., Lai, P.T., Wong, H.

    Published in Microelectronics and reliability (01-05-2004)
    “…This paper reviews the conduction mechanisms in the gate dielectric films of MOSFETs for VLSI and ULSI technologies. They include Fowler–Nordheim tunneling,…”
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  5. 5

    Patterning micro- and nano-structured FePt by direct imprint lithography by Li, Guijun, Dong, Qingchen, Xin, Jianzhuo, Leung, C.W., Lai, P.T., Wong, Wai-Yeung, Pong, Philip W.T.

    Published in Microelectronic engineering (01-10-2013)
    “…Direct imprint FePt-containing polymer on silicon wafers. •Direct nanoimprint on silicon.•Micro- and nano-patterned FePt.•Metal-containing polymer as…”
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  6. 6

    Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN by Lin, L.M., Luo, Yi, Lai, P.T., Lau, Kei May

    Published in Thin solid films (05-12-2006)
    “…The effects of oxidation and annealing temperatures on thermally oxidized GaN were investigated. GaN wafers were oxidized at 750 °C, 800 °C and 850 °C,…”
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  7. 7

    Design of vertically-stacked polychromatic light-emitting diodes by Hui, K N, Wang, X H, Li, Z L, Lai, P T, Choi, H W

    Published in Optics express (08-06-2009)
    “…A new design for a polychromatic light-emitting diode (LED) is proposed and demonstrated. LED chips of the primary colors are physically stacked on top of each…”
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  8. 8

    Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient by Xu, J.P., Lai, P.T., Li, C.X., Zou, X., Chan, C.L.

    Published in IEEE electron device letters (01-06-2006)
    “…Wet-NO oxidation with or without wet NH/sub 3/ pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible…”
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  9. 9

    Pixel-to-Pixel Fiber-Coupled Emissive Micro-Light-Emitting Diode Arrays by Zhu, L., Ng, C.W., Wong, N., Wong, K.K.Y., Lai, P.T., Choi, H.W.

    Published in IEEE photonics journal (01-06-2009)
    “…We report on an integrated fiber-coupled bi-linear micro-light-emitting diode array, serving as a portable microdisplay system. The fiber bundle transforms the…”
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  10. 10

    Photo-response of polymer thin-film transistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) by Liu, Y.R., Peng, J.B., Lai, P.T.

    Published in Thin solid films (30-04-2008)
    “…Polymer thin-film transistors (PTFT) and resistors based on poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) are fabricated by spin-coating…”
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    Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator by Xu, J.P., Lai, P.T., Zhong, D.G., Chan, C.L.

    Published in IEEE electron device letters (01-01-2003)
    “…Thin oxynitride grown in NO at low temperature was successfully used as gate insulator for fabricating MISiC Schottky hydrogen sensors. Response properties of…”
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  13. 13

    Improved performance and reliability of N2O-grown oxynitride on 6H-SiC by Xu, J.P., Lai, P.T., Chan, C.L., Li, B., Cheng, Y.C.

    Published in IEEE electron device letters (01-06-2000)
    “…This letter reports, for the first time, N/sub 2/O-grown oxides on both n-type and p-type 6H-SiC wafers. It is demonstrated that the N/sub 2/O-grown technique…”
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  14. 14

    Investigation of WO3/ZnO thin-film heterojunction-based Schottky diodes for H2 gas sensing by Liu, Y., Yu, J., Lai, P.T.

    Published in International journal of hydrogen energy (24-06-2014)
    “…A comparative study of Schottky diode hydrogen gas sensors based on Pd/WO3/Si and Pd/WO3/ZnO/Si structure is presented in this work. Atomic force microscopy…”
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  15. 15

    Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode by Ma, Y.X., Huang, X.D., Lai, P.T., Tang, W.M.

    Published in Applied surface science (15-12-2022)
    “…[Display omitted] •Ta-doped Nd oxide is adopted as gate dielectric for OTFTs with high carrier mobility.•Low threshold voltage owes to high-k dielectric, ITO…”
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  16. 16

    Dependence of sensing performance of OTFT-based H2 sensor on channel length by Li, Bochang, Lai, P.T., Tang, W.M.

    Published in International journal of hydrogen energy (26-04-2021)
    “…For a hydrogen sensor based on organic thin-film transistor (OTFT) with palladium (Pd) source/drain (S/D) electrodes as the sensing medium, the effects of…”
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  17. 17

    Plasmon-phonon resonance at gate-electrode/gate-dielectric interface on carrier mobility of organic TFTs with high-k gate dielectrics by Ma, Y.X ., Su, H., Tang, W.M., Lai, P.T.

    Published in Applied surface science (01-11-2021)
    “…[Display omitted] •Plasmon-phonon resonance is experimentally demonstrated in thin-film transistors.•It is observed for transistors with 2 different…”
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  18. 18

    Determination of optimal insulator thickness for MISiC hydrogen sensors by Xu, J.P., Lai, P.T., Han, B., Tang, W.M.

    Published in Solid-state electronics (01-09-2004)
    “…Response mechanisms of hydrogen sensor based on a metal–insulator–SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the…”
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