Search Results - "Lai, E.K"

Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM Applications by Chien, W.C., Ho, H.Y., Yeh, C.W., Yang, C.H., Cheng, H.Y., Kim, W., Kuo, I.T., Gignac, L.M., Lai, E.K., Gong, N., Chou, Y.C., Cheng, C.W., Lin, Y.F., Papalia, J.M., Carta, F., Rav, A., Bruce, R.L., Briahtxky, M., Lung, H.L.

“…We present a scaling study toward lZnm node 3D Cross-point PCM (XPCM) for Storage Class Memory (SCM) applications. The low operation current, and low metal…”
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Unipolar Switching Behaviors of RTO \hbox RRAM by Chien, W.C., Chen, Y.C., Lai, E.K., Yao, Y.D., Lin, P., Horng, S.F., Gong, J., Chou, T.H., Lin, H.M., Chang, M.N., Shih, Y.H., Hsieh, K.Y., Liu, R., Chih-Yuan Lu

“…The microstructure and electrical properties of the WO X -based resistive random access memory are investigated in this letter. The WO X layer is formed by…”
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A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications by Chien, W.C., Zheng, J.X., Yeh, C.W., Gignac, L.M., Cheng, H.Y., Liu, Z.L., Grun, A., Sung, C.L., Lai, E.K., Cheng, S., Cheng, C.W., Buzi, L., Ray, A., Bishop, D., Bruce, R.L., BrightSky, M., Lung, H.L.

“…We present a new selector only memory material, CuGeSe, with low program current, fast switch speed properties and good endurance. The switching mechanism is…”
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In Vivo Image-Based 4D Modeling of Competent and Regurgitant Mitral Valve Dynamics by Aly, A. H., Aly, A. H., Lai, E. K., Yushkevich, N., Stoffers, R. H., Gorman, J. H., Cheung, A. T., Gorman, J. H., Gorman, R. C., Yushkevich, P. A., Pouch, A. M.

“…Background In vivo characterization of mitral valve dynamics relies on image analysis algorithms that accurately reconstruct valve morphology and motion from…”
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A Highly Reliable Self-Aligned Graded Oxide WOx Resistance Memory: Conduction Mechanisms and Reliability by ChiaHua Ho, Lai, E.K., Lee, M.D., Pan, C.L., Yao, Y.D., Hsieh, K.Y., Liu, R., Lu, C.Y.

“…WO x formed by plasmas oxidation shows promising multi-bit/cell resistance memory characteristics (ChiaHua Ho et al., 2007). The simple memory is completely…”
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AsSeGeS and GeN Heterostructures for Superior OTS Performance by Grun, A., Lui, Z.L., Cheng, C.W., Piatek, D., Lai, E.K., Kuo, Y.T., Chien, W.C., Cheng, S., BrightSky, M., Lung, H.L., Cheng, H.Y.

“…To improve the voltage threshold (V th ), off-current (I off ), and reliability of 15nm ovonic threshold switching (OTS) selectors in one-selector-one-resistor…”
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Demonstration of free radical generation in stunned myocardium of intact dogs with the use of the spin trap α-phenyl N-tert-butyl nitrone by BOLLI, R, PATEL, B. S, JEROUDI, M. O, LAI, E. K, MCCAY, P. B

“…Recent studies suggest that oxygen free radicals may mediate postischemic myocardial dysfunction ("stunning"), but all the evidence for this hypothesis is…”
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A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications by Chien, W.C., Lai, E.K., Buzi, L., Cheng, C.W., Yeh, C.W., Ray, A., Gignac, L.M., Gong, N., Cheng, H.Y., Grun, A., Lee, D.Y., Kim, W., Majumdar, A., Bishop, D., Bruce, R.L., Daudelin, D., Ho, H.Y., BrightSky, M., Lung, H.L.

“…We present a scaling study on phase change memory (PCM)-ovonic threshold switches (OTS) memory cells for storage class memory (SCM) applications. For the first…”
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Direct evidence that oxygen-derived free radicals contribute to postischemic myocardial dysfunction in the intact dog by Bolli, R, Jeroudi, M.O, Patel, B.S, DuBose, C.M, Lai, E.K, Roberts, R, McCay, P.B

“…Electron paramagnetic resonance (EPR) spectroscopy was used to investigate whether (i) the free radicals produced in the ``stunned'' myocardium (myocardium…”
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Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory by Chien, W.C., Gignac, L.M., Gong, N., Yeh, C.W., Yang, C.H., Bruce, R.L., Cheng, H.Y., Papalia, J.M., Miyazoe, H., Cheng, C.W., Kim, W., Kuo, I.T., Carta, F., Ray, A., Lai, E.K., BrightSky, M., Lung, H.L.

“…A reliability study for PCM and OTS intermixing was addressed. The buffer layer between PCM and OTS plays a key role in preventing PCM/OTS intermixing after…”
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Reactive Free Radical Generation in vivo in Heart and Liver of Ethanol-Fed Rats: Correlation with Radical Formation in vitro by Reinke, L. A., Lai, E. K., DuBose, C. M., McCay, P. B.

“…Rats fed a high-fat ethanol-containing diet for 2 weeks were found to generate free radicals in liver and heart in vivo. The radicals are believed to be…”
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Insight of stress effect on the ONO stack layer in a sONOS-type flash memory cell by Yeh, C.C., Liao, Y.Y., Tahui Wang, Tsai, W.J., Lu, T.C., Kao, H.L., Ou, T.F., Chen, M.S., Chen, Y.J., Lai, E.K., Shih, Y.H., WenChi Ting, Ku, Y.H.J., Chih-Yuan Lu

“…The stress effect on the ONO stack layer in a two-bit SONOS-type memory cell is investigated. Our results show that P/E cycles induced stress will generate…”
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Understanding amorphous states of phase-change memory using Frenkel-Poole model by Shih, Y.H., Lee, M.H., Breitwisch, M., Cheek, R., Wu, J.Y., Rajendran, B., Zhu, Y., Lai, E.K., Chen, C.F., Cheng, H.Y., Schrott, A., Joseph, E., Dasaka, R., Raoux, S., Lung, H.L., Lam, C.

“…A method based on Frenkel-Poole emission is proposed to model the amorphous state (high resistance state) in mushroom-type phase-change memory devices. The…”
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Mechanisms of retention loss in Ge2Sb2Te5-based Phase-Change Memory by Shih, Y.H., Wu, J.Y., Rajendran, B., Lee, M.H., Cheek, R., Lamorey, M., Breitwisch, M., Zhu, Y., Lai, E.K., Chen, C.F., Stinzianni, E., Schrott, A., Joseph, E., Dasaka, R., Raoux, S., Lung, H.L., Lam, C.

“…Data retention loss from the amorphous (RESET) state over time in Phase-Change Memory cells is associated with spontaneous crystallization. In this paper, the…”
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Two-bit/cell Nitride Trapping Nonvolatile Memory and Reliability by Shih, Y.H., Lai, E.K., Kuang Yeu Hsieh, Liu, R., Chih-Yuan Lu

“…For two-bit/cell nitride trapping nonvolatile memory, the V T window is limited due "2nd bit effect". It suffers program state instability because BTBT-HH…”
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Highly reliable 2-bit/cell nitride trapping flash memory using a novel array-nitride-sealing (ANS) ONO process by Yen-Hao Shih, Lee, S.C., Lue, H.T., Wu, M.D., Hsu, T.H., Lai, E.K., Hsieh, J.Y., Wu, C.W., Yang, L.W., Kuang Yeu Hsieh, Chen, K.C., Liu, R., Chih-Yuan Lu

“…For nitride trapping NVM using BTBT-HH erase, hot hole injection generates Si/BOX interface traps that cause subthreshold swing degradation. During data…”
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A Novel Self-aligned Si-wire Flash Memory Featuring Multi-bit/cell Operation, Fast Edge +FN Erase, and Over-erasure Immunity by Hsueh, M.H., Shih, Y.H., Wu, M.D., Hsiao, W.M., Lu, C.P., Wu, C.W., Hsieh, J.Y., Lai, E.K., Hsieh, K.Y., Liu, R., Chih-Yuan Lu

“…We present a new memory device using two self-aligned silicon wires for charge storage. Programming is by channel hot electron injection, and a large 2 nd bit…”
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Highly Scalable and Reliable Multi-bit/cell Nitride Trapping Nonvolatile Memory Using Enhanced ANS-ONO Process with A Nitridized Interface by Shih, Y.H., Lai, E.K., Hsieh, J.Y., Hsu, T.H., Wu, M.D., Lu, C.P., Ni, K.P., Chou, T.Y., Yang, L.W., Hsieh, K.Y., Liaw, M.H., Lu, W.P., Chen, K.C., Ku, J., Ni, F.L., Liu, R., Chih-Yuan Lu

“…Multi-bit/cell nitride trapping NVM (Eitan et al., 2000 and 2005) using BTBT-HH erase suffers an "apparent" V T loss due to interface trap (N IT ) generation…”
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An update on antioxidant theory: spin trapping of trichloromethyl radicals in vivo by McCay, P B, King, M M, Poyer, J L, Lai, E K

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