Search Results - "Lafragette, J.L."

2.5-Gb/s transmission characteristics of 1.3-μm DFB lasers with external optical feedback by Grillot, F., Thedrez, B., Py, J., Gauthier-Lafaye, O., Voiriot, V., Lafragette, J.L.

“…All-optical networks will require low-cost laser sources. In order to reduce the packaging cost and to design a module without optical isolator, the 2.5-Gb/s…”
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Coherence collapse threshold of 1.3µm semiconductor DFB lasers by Grillot B. Thedrez V. Voiriot And J.L. Lafragette, F.

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Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers by Grillot, F., Thedrez, B., Gauthier-Lafaye, O., Martineau, M.F., Voiriot, V., Lafragette, J.L., Gentner, J.L., Silvestre, L.

“…The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection…”
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Coherence-collapse threshold of 1.3-[mu]m semiconductor DFB lasers by Grillot, F, Thedrez, B, Gauthier-Lafaye, O, Martineau, M.F, Voiriot, V, Lafragette, J.L, Gentner, J.L, Silvestre, L

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2.5-Gb/s transmission characteristics of 1.3-[mu]m DFB lasers with external optical feedback by Grillot, F, Thedrez, B, Py, J, Gauthier-Lafaye, O, Voiriot, V, Lafragette, J.L

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2.5 Gbit/s transmission characteristics of 1.3µm DFB lasers with external optical feedback by Grillot B. Thedrez J. Py O. Gauthier-Lafaye V. Voiriot And J.L. Lafragette, F.

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1.55 /spl mu/m high efficiency tapered DFB laser using UV 250 2-in technology process by Voiriot, V., Thedrez, B., Gentner, J.L., Rainsant, J.-M., Colson, V., Duchemin, C., Gaborit, F., Hubert, S., Lafragette, J.L., Pinquier, A., Roux, L., Fernier, B.

“…We report on high external efficiency reduced far field divergence DFB laser emitting at 1.55 /spl mu/m. A high spatial resolution lithography is used to…”
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2.5Gbit/s 85 ° C floor-free operation of 1.3 μm DFB lasers under external optical feedback for different reflection distances by Grillot, F., Thedrez, B., Gauthier-Lafaye, O., Py, J., Martineau, M.F., Lafragette, J.L., Gentner, J.L., Silvestre, L.

“…all-optical networks require low cost and high efficiency laser sources. We demonstrate floorless 2.5 Gbit/s transmission under-19dB return loss and at 85°C…”
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2.5 Gbit/s error-floor free transmission with high extinction ratio using directly modulated 1.55 /spl mu/m tapered lasers by Thedrez, B., Rainsant, J.M., Aberkane, N., Voiriot, V., Hubert, S., Lafragette, J.L., Roux, L., Martineau, M.F., Gaborit, F., Fernier, B., Domingues, D.

“…The emergence of a BER floor using a directly modulated laser is studied versus the modulation extinction ratio. A selection on efficiency leads to a 100% DFB…”
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New WDM DFB laser structure for facet phase-free uniform performances by Thedrez, B., Voiriot, V., Hubert, S., Lafragette, J.L., Roux, L., Grillot, F., Gentner, J.L., Fernier, B.

“…A new concept for a DFB MQW monomode laser has been proposed and demonstrated. The new structure combines high SMSR, excellent uniformity, high efficiency and…”
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Record low noise factor (5.2 dB) in 1.55 /spl mu/m bulk SOA for high bit rate low-noise preamplification by Ducellier, T., Basset, R., Emery, J.-Y., Pommereau, F., N'Go, R., Lafragette, J.L., Aubert, P., Doussiere, P., Laube, G., Goldstein, I.

“…A new optimized SOA, with short active region, tensile bulk active material and double core tapers, shows an extremely low n/sub sp//c/sub 1/ value of 5.2 dB,…”
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1.3 /spl mu/m low cost plastic module for 622 Mbit/s transmission at 85/spl deg/C by Fernier, B., Adam, K., Artigue, C., Barrou, Th, Goth, A., Grard, E., Jorg, W., Keller, D., Lafragette, J.L., Lestra, A., Pagnod, Ph, Rabaron, S., Rainsant, J.M., Scherb, J., Toullier, D., Tregoat, D., Rehm, W.

“…We present the characteristics of an uncooled plastic module for outdoor operation (+3 dBm at 85/spl deg/C). A transmission experiment is reported at 622…”
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Encapsulated tapered active layer 1.3 μm Fabry-Perot laser operating at high temperature by Lestra, A, Aubert, P, Colson, V, Gentner, J.L, Grard, E, Lafragette, J.L, Le Gouezigou, L, Pinquier, A, Roux, L, Toullier, D, Tregoat, D, Fernier, B

“…High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that…”
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