Search Results - "Lafford, T.A."

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  1. 1

    Mono-like silicon ingots grown on low angle misoriented seeds: Defect characterization by synchrotron X-ray diffraction imaging by Tsoutsouva, M.G., Oliveira, V.A., Camel, D., Baruchel, J., Marie, B., Lafford, T.A.

    Published in Acta materialia (01-04-2015)
    “…The present work studies the generation and propagation of sub-grain boundaries and dislocations in mono-like silicon ingots grown on monocrystalline seeds…”
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    Journal Article
  2. 2

    Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon by Oliveira, V.A., Marie, B., Cayron, C., Marinova, M., Tsoutsouva, M.G., Sio, H.C., Lafford, T.A., Baruchel, J., Audoit, G., Grenier, A., Tran Thi, T.N., Camel, D.

    Published in Acta materialia (01-12-2016)
    “…The growth structure of photovoltaic multicrystalline silicon formed by directional solidification presents a high fraction of Σ3 and higher order twins…”
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    Journal Article
  3. 3

    Segregation, precipitation and dislocation generation between seeds in directionally solidified mono-like silicon for photovoltaic applications by Tsoutsouva, M.G., Oliveira, V.A., Camel, D., Tran Thi, T.N., Baruchel, J., Marie, B., Lafford, T.A.

    Published in Journal of crystal growth (01-09-2014)
    “…The generation of structural defects in directionally solidified mono-like silicon on a pavement of seeds has been investigated by synchrotron X-ray imaging,…”
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    Journal Article Conference Proceeding
  4. 4

    Quantitative analysis by in situ synchrotron X-ray radiography of the evolution of the mushy zone in a fixed temperature gradient by Salloum-Abou-Jaoude, G., Reinhart, G., Combeau, H., Založnik, M., Lafford, T.A., Nguyen-Thi, H.

    Published in Journal of crystal growth (01-02-2015)
    “…This paper deals with a series of experiments dedicated to the analysis of the time evolution of a mushy zone in a fixed temperature gradient, carried out on…”
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    Journal Article
  5. 5

    Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire by Bchetnia, A., Touré, A., Lafford, T.A., Benzarti, Z., Halidou, I., Habchi, M.M., El Jani, B.

    Published in Journal of crystal growth (15-10-2007)
    “…GaN films were grown by metalorganic chemical vapor deposition (MOCVD) on silicon nitride (SiN)-treated c-plane sapphire substrate. Using in situ laser…”
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    Journal Article
  6. 6

    The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers — Preliminary results from the second round-robin by Matyi, R.J., Depero, L.E., Bontempi, E., Colombi, P., Gibaud, A., Jergel, M., Krumrey, M., Lafford, T.A., Lamperti, A., Meduna, M., Van der Lee, A., Wiemer, C.

    Published in Thin solid films (30-09-2008)
    “…X-ray reflectometry (XRR) is a unique technique for thin film analysis providing information on thickness, density, and roughness. The Versailles Project on…”
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    Journal Article Conference Proceeding
  7. 7

    Mosaicity and stress effects on luminescence properties of GaN by Toure, A., Bchetnia, A., Lafford, T. A., Benzarti, Z., Halidou, I., Bougrioua, Z., Jani, B. El

    “…High‐resolution X‐ray diffraction (HRXRD) of several GaN layers grown on Si/N treated c ‐plane sapphire substrate by metal‐organic chemical vapour phase…”
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    Journal Article
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  9. 9

    Magnetic properties of Co 32Pd 68/Ag multilayers by Lafford, T.A., Żuberek, R., Gibbs, M.R.J.

    “…Magnetic, magnetostrictive and structural investigations were carried out on Co 32Pd 68/Ag multilayers rf-sputtered onto Kapton® substrates. Co 32Pd 68 is…”
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  10. 10

    Interpretation of saturation magnetostriction data in multilayer systems by Lafford, T.A., Gibbs, M.R.J.

    Published in IEEE transactions on magnetics (01-11-1995)
    “…Models currently used in the interpretation of measured values of saturation magnetostriction constant in multilayers are reviewed. A new expression applicable…”
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    Journal Article
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