Search Results - "Ladislav Harmatha"

Charge injection and transport properties of an organic light-emitting diode by Juhasz, Peter, Nevrela, Juraj, Micjan, Michal, Novota, Miroslav, Uhrik, Jan, Stuchlikova, Lubica, Jakabovic, Jan, Harmatha, Ladislav, Weis, Martin

“…The charge behavior of organic light emitting diode (OLED) is investigated by steady-state current-voltage technique and impedance spectroscopy at various…”
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Potentiostatic Electrodeposition of Cu2O under Light and Dark for Photoelectrochemical Hydrogen Generation Applications by Mikolasek, Miroslav, Ondrejka, Peter, Chymo, Filip, Novak, Patrik, Harmatha, Ladislav, Rehacek, Vlastimil, Hotovy, Ivan

“…Potentiostatic electrodeposition conducted at various deposition voltages from lactate-stabilized copper sulfate electrolyte was used for preparation of Cu2O…”
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Composition Related Electrical Active Defect States of InGaAs and GaAsN by Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

“…This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for…”
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Trap-assisted tunnelling current in MIM structures by Racko Juraj, Mikolášek Miroslav, Granzner Ralf, Breza Juraj, Donoval Daniel, Grmanová Alena, Harmatha Ladislav, Schwierz Frank, Fröhlich Karol

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Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts by Mikolasek, Miroslav, Frohlich, Karol, Husekova, Kristina, Racko, Juraj, Rehacek, Vlastimil, Chymo, Filip, Tapajna, Milan, Harmatha, Ladislav

“…•Ruthenium oxide suggested as a transparent catalytic gate for MIS photoanode.•Lower Fermi level pinning observed for ruthenium oxide compared to Ni MIS…”
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Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells by Mikolášek, Miroslav, Racko, Juraj, Harmatha, Ladislav

“…•Highlights Output parameters of silicon heterojunction solar cells are analyzed by simulation.•Parasitic Schottky barrier causes open circuit voltage…”
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Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p) High-k MOS Structure by Racko, Juraj, Harmatha, Ladislav, Breza, Juraj, Benko, Peter, Donoval, Daniel

“…The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a…”
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Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling by Racko, Juraj, Benko, Peter, Mikolášek, Miroslav, Granzner, Ralf, Kittler, Mario, Schwierz, Frank, Harmatha, Ladislav, Breza, Juraj

“…•A model of trap-assisted tunnelling in heterostructures was developed and combined with a model of direct tunnelling.•The effect of Al distribution in the…”
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Characterization of Unipolar Power Devices Technology by Harmatha, Ladislav, Tapajna, Milan, Pisecny, Pavol, Stuchlikova, Lubica, Donoval, Daniel

“…The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a…”
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Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer by Tapajna, Milan, Pjencak, Jaroslav, Vrbicky, Andrej, Kudela, Pavol, Harmatha, Ladislav

“…High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of…”
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Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods by Pisecny, Pavol, Stuchlikova, Lubica, Harmatha, Ladislav, Tapajna, Milan, Csabay, Otto

“…The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and…”
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Properties of the Si-SiO2 Interfaces in MOS Structures with Nitrogen Doped Silicon by Harmatha, Ladislav, Ballo, Peter, Breza, Juraj, Pisecny, Pavol, Tapajna, Milan

“…The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the…”
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DLTS study of InGaAs and GaAsN structures with different indium and nitrogen compositions by Kosa, Arpad, Stuchlikova, Lubica, Harmatha, Ladislav, Kovac, Jaroslav, Sciana, Beata, Dawidowski, Wojciech, Tlaczala, Marek

“…In this article Deep Level Transient Fourier Spectroscopy experiments and various evaluation procedures were used to study emission and capture processes of…”
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Characterization of charge traps in pentacene diodes by electrical methods by Juhasz, Peter, Vary, Michal, Stuchlikova, Lubica, Harmatha, Ladislav, Jakabovic, Jan, Weis, Martin

“…[Display omitted] •The steady-state current–voltage measurement shows bottleneck only.•The impedance spectroscopy provides the major relaxations.•The transient…”
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Electrical transport mechanisms in amorphous/crystalline silicon heterojunction: Impact of passivation layer thickness by Mikolášek, Miroslav, Nemec, Michal, Vojs, Marian, Jakabovič, Ján, Řeháček, Vlastimil, Zhang, Dong, Zeman, Miro, Harmatha, Ladislav

“…We investigate the current transport mechanisms in the amorphous silicon/crystalline silicon heterojunction and the change of these processes when an intrinsic…”
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Si-Based Metal–Insulator–Semiconductor Structures with RuO 2 –(IrO 2 ) Films for Photoelectrochemical Water Oxidation by Sahoo, Prangya P., Mikolášek, Miroslav, Hušeková, Kristína, Dobročka, Edmund, Šoltýs, Ján, Ondrejka, Peter, Kemény, Martin, Harmatha, Ladislav, Mičušík, Matej, Fröhlich, Karol

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A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times by RACKO, Juraj, BENKO, Peter, HOTOVY, Ivan, HARMATHA, Ladislav, MIKOLASEK, Miroslav, GRANZNER, Ralf, KITTLER, Mario, SCHWIERZ, Frank, BREZA, Juraj

“…The work presents a physical model of trap-assisted tunneling that can quantitatively determine the effect of traps upon the total current through a…”
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DLTS Study of InGaAsN/GaAs p-i-n Diode by Jakub Rybar, Lubica Stuchlikova, Ladislav Harmatha, Juraj Jakus, Jaroslav Kovac, Beata Sciana, Damian Radziewicz, Damian Pucicki, Wojciech Dawidowski, Marek Tlaczala

“…The paper presents an in-depth DLTS characterization of the p-i-n structure based on the InGaAsN/GaAs triple quantum well. Three DLTS evaluation methods were…”
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Capacitance study of carrier inversion at the amorphous/crystalline silicon heterojunction passivated by different thicknesses of i-layer by MIKOLASEK, Miroslav, STUCHLIKOVA, Lubica, HARMATHA, Ladislav, VINCZE, Andrej, NEMEC, Michal, RACKO, Juraj, BREZA, Juraj

“…The paper deals with the diagnostics of structures containing a heterojunction of amorphous and crystalline silicon representing the key part of the silicon…”
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Si-Based Metal–Insulator–Semiconductor Structures with RuO2–(IrO2) Films for Photoelectrochemical Water Oxidation by Sahoo, Prangya P, Mikolášek, Miroslav, Hušeková, Kristína, Dobročka, Edmund, Šoltýs, Ján, Ondrejka, Peter, Kemény, Martin, Harmatha, Ladislav, Mičušík, Matej, Fröhlich, Karol

“…We report on the properties of metal–insulator–semiconductor (MIS) photoanodes for water oxidation employing a thin RuO2–(IrO2) film as a top catalytic layer…”
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