Search Results - "Laderman, S. S."

Refine Results
  1. 1
  2. 2
  3. 3

    Single source metalorganic chemical vapor deposition of low microwave surface resistance YBa2Cu3O7 by HISKES, R, DICAROLIS, S. A, YOUNG, J. L, LADERMAN, S. S, JACOWITZ, R. D, TABER, R. C

    Published in Applied physics letters (29-07-1991)
    “…YBa2Cu3O7 films 2000–7500 Å thick were deposited onto [100] LaAlO3 substrates using a novel single source metalorganic chemical vapor deposition technique. We…”
    Get full text
    Journal Article
  4. 4

    Epitaxial and Smooth Films of a-Axis YBa2Cu3O7 by Eom, C B, Marshall, A F, Laderman, S S, Jacowitz, R D, Geballe, T H

    “…YBa(2)Cu(3)O(7) films have been grown epitaxially on SrTiO(3) (100) and LaAlO(3) (100) substrates with nearly pure a-axis orientation and with transition…”
    Get full text
    Journal Article
  5. 5

    Surface resistance of epitaxial YBa2Cu3O7 thin films on CeO2 diffusion barriers on sapphire by MERCHANT, P, JACOWITZ, R. D, TIBBS, K, TABER, R. C, LADERMAN, S. S

    Published in Applied physics letters (10-02-1992)
    “…Epitaxial thin films of YBa2Cu3O7 (YBCO) have been deposited by off-axis sputtering onto substrates of r-plane sapphire coated with a CeO2 diffusion barrier…”
    Get full text
    Journal Article
  6. 6

    Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphire by CHAR, K, NEWMAN, N, GARRISON, S. M, BARTON, R. W, TABER, R. C, LADERMAN, S. S, JACOWITZ, R. D

    Published in Applied physics letters (23-07-1990)
    “…Microwave surface resistance data were measured on pairs of YBa2Cu3O7 thin films on Al2O3 {11_02} substrates by a parallel plate resonator technique. The…”
    Get full text
    Journal Article
  7. 7

    Properties of epitaxial YBa2Cu3O7 thin films on Al2O3 {1̄012} by Char, K., Fork, D. K., Geballe, T. H., Laderman, S. S., Taber, R. C., Jacowitz, R. D., Bridges, F., Connell, G. A. N., Boyce, J. B.

    Published in Applied physics letters (19-02-1990)
    “…Epitaxial YBa2Cu3O7 films were grown on Al2O3 {1̄012} by a laser ablation technique. X-ray diffraction shows that films are epitaxial with the c axis…”
    Get full text
    Journal Article
  8. 8
  9. 9

    A-axis-oriented YBa2Cu3O7/PrBa2Cu3O7 superlattices by EOM, C. B, MARSHALL, A. F, TRISCONE, J.-M, WILKENS, B, LADERMAN, S. S, GERBALLE, T. H

    “…A modulated structure has been fabricated from high transition temperature superconductors where the individual CuO(2) planes are composed of alternating…”
    Get full text
    Journal Article
  10. 10

    Microstructural interaction of Y2Ba4Cu8O16 stacking faults within YBa2Cu3O7−x by Marshall, A. F., Char, K., Barton, R. W., Kapitulnik, A., Laderman, S. S.

    Published in Journal of materials research (01-10-1990)
    “…A transmission electron microscopy study of a post-annealed YBa2Cu3O7−x thin film shows that extra Cu–O planes within the structure can aggregate as stacking…”
    Get full text
    Journal Article
  11. 11

    Double-diffused graded SiGe-base bipolar transistors by Vook, D., Kamins, T.I., Burton, G., Vande Voorde, P.J., Wang, H.-H., Coen, R., Lin, J., Pettengill, D.F., Yu, P.-K., Rosner, S.J., Turner, J.E., Laderman, S.S., Horng-Sen Fu, Wang, A.S.

    Published in IEEE transactions on electron devices (01-06-1994)
    “…Self-aligned SiGe/Si bipolar transistors have been fabricated using a single-polysilicon, double-diffused process with the base in a graded SiGe layer to…”
    Get full text
    Journal Article
  12. 12
  13. 13
  14. 14
  15. 15

    Microscopic identification of defects propagating through the center of silicon and indium-doped liquid encapsulated Czochralski grown GaAs using x-ray topography by SCOTT, M. P, LADERMAN, S. S, ELLIOT, A. G

    Published in Applied physics letters (01-01-1985)
    “…Extended defects in 3×1018 cm−3 Si-doped and 2×1019 cm−3 In-doped GaAs grown by the liquid encapsulated Czochralski technique are investigated using x-ray…”
    Get full text
    Journal Article
  16. 16

    USING COUNTY-BASED MARKETS TO SUPPORT AND FEDERAL RESERVE MARKETS TO IMPLEMENT BANK MERGER POLICY by Laderman, Elizabeth S., Pilloff, Steven J.

    Published in Journal of competition law & economics (01-03-2007)
    “…Abstract In this paper, we consider three issues raised by the apparent inconsistency between the current research practice of using county-based markets…”
    Get full text
    Journal Article
  17. 17
  18. 18

    Electrical and material quality of Si1-xGex/Si p-N heterojunctions produced by limited reaction processing by KING, C. A, HOYT, J. L, NOBLE, D. B, GRONET, C. M, GIBBONS, J. F, SCOTT, M. P, KAMINS, T. I, LADERMAN, S. S

    Published in IEEE electron device letters (01-04-1989)
    “…Si1-xGex/Si p-N heterojunctions prepared by a chemical vapor deposition technique, limited reaction processing (LRP) were characterized using DC electrical…”
    Get full text
    Journal Article
  19. 19
  20. 20

    Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures by Fischer‐Colbrie, A., Miller, J. N., Laderman, S. S., Rosner, S. J., Hull, R.

    “…We have grown pseudomorphic modulation‐doped Al y Ga1−y As (0.25≤y≤0.30)/In x Ga1−x As (x≤0.50) on GaAs structures by molecular‐beam epitaxy and obtained…”
    Get full text
    Journal Article