Search Results - "Lacrevaz, T."

RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits by Bermond, C., Brocard, M., Lacrevaz, T., Farcy, A., Le Maître, P., Leduc, P., Ben Jamaa, H., Chéramy, S., Sillon, N., Fléchet, B.

“…[Display omitted] •Innovative and realistic 4-port test structures for high wide frequency range characterizations.•Extraction of noise coupling between TSVs…”
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Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors by BERTAUD, T, BERMOND, C, LACREVAZ, T, VALLEE, C, MORAND, Y, FLECHET, B, FARCY, A, GROS-JEAN, M, BLONKOWSKI, S

“…Complementary characterisation protocols are needed to analyse high-k insulator behaviour from DC to microwave frequencies. The extraction of Plasma Enhanced…”
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Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration by Bertaud, T., Defay, E., Bermond, C., Lacrevaz, T., Abergel, J., Salem, B., Capraro, S., Flechet, B.

“…This paper deals with the electrical wideband frequency and in situ characterization of aluminum nitride (AlN) material. This material is interesting for bulk…”
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Quality factor and frequency bandwidth of 2D self-inductors in 3D integration stacks by Roullard, J., Capraro, S., Eid, E., Cadix, L., Bermond, C., Lacrevaz, T., Farcy, A., Flechet, B.

“…Effects due to 3D level stack on high frequency (HF) properties of 2D self-inductors integrated in the back end of line (BEOL) are investigated. Different…”
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Characterization and modeling of RF substrate coupling effects in 3D integrated circuit stacking by Eid, E., Lacrevaz, T., Bermond, C., Capraro, S., Roullard, J., Fléchet, B., Cadix, L., Farcy, A., Ancey, P., Calmon, F., Valorge, O., Leduc, P.

“…This work addresses parasitic substrate coupling effects in 3D integrated circuits due to Through Silicon Vias (TSV). Electrical characterizations have been…”
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Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node by Blampey, B., Gallitre, M., Farcy, A., Lacrevaz, T., De Rivaz, S., Bermond, C., Fléchet, B., Jousseaume, V., Zenasni, A., Ancey, P.

“…New porous ULK materials are now required for maintaining a constant RC factor as back-end dimensions shrink for each new technology node. Porous SiOCH ULK HF…”
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Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45 nm node by Gallitre, M., Blampey, B., Fléchet, B., Farcy, A., Arnal, V., Bermond, C., Lacrevaz, T., Torres, J.

“…With the dimensions scaling down at each new technology node, introduction of porous dielectric materials is required to reduce the interconnect capacitance…”
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Wide band frequency and in situ characterisation of high permittivity insulators (High- K) for H.F. integrated passives by Lacrevaz, T., Fléchet, B., Farcy, A., Torres, J., Gros-Jean, M., Bermond, C., Vo, T.T., Cueto, O., Blampey, B., Angénieux, G., Piquet, J., de Crécy, F.

“…High permittivity insulators (High- K) are progressively introduced in high-speed integrated passives and devices in order to optimize circuits performances…”
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Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45nm node by Gallitre, M., Blampey, B., Fléchet, B., Farcy, A., Arnal, V., Bermond, C., Lacrevaz, T., Torres, J.

“…With the dimensions scaling down at each new technology node, introduction of porous dielectric materials is required to reduce the interconnect capacitance…”
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Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors by Thomas, M., Piquet, J., Farcy, A., Bermond, C., Torres, J., Lacrevaz, T., Flechet, B., Casanova, N., Perrot, C., Caubet, P., Chenevier, B.

“…The MIM capacitor is a key passive component for analog and RF applications. To be integrated among copper interconnect levels, MIM capacitors have to be…”
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High frequencies characterization of Cu-MIM capacitors in parallel configuration for advanced integrated circuits by Piquet, J., Bermond, C., Thomas, M., Fléchet, B., Farcy, A., Vo, T.T., Lacrevaz, T., Torres, J., Cueto, O., Angénieux, G.

“…New metal insulator metal (MIM) capacitors in parallel configuration have been implemented between upper copper interconnect levels using a damascene…”
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Wide band frequency and in situ characterization of high permittivity insulators (high- k) for high-speed integrated passives by Lacrevaz, T., Fléchet, B., Farcy, A., Torres, J., Gros-Jean, M., Bermond, C., Cueto, O., Blampey, B., Angénieux, G., Piquet, J., de Crécy, F.

“…High permittivity insulators (high- k) are progressively introduced in high-speed integrated passives and devices in order to optimize circuits performances…”
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Impact of Design on High-Frequency Performance of Advanced MIM Capacitors Using Si N Dielectric Layers by Piquet, J., Bermond, C., Thomas, M., Farcy, A., Lacrevaz, T., Blampey, B., Torres, J., Flechet, B., Angenieux, G.

“…High-frequency characterizations of ultra thin 32 nm PECVD Si 3 N 4 dielectric in an advanced metal-insulator-metal (MIM) capacitors are presented, with focus…”
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Impact of Design on High Frequency Performances of Advanced MIM Capacitors Using SiN Dielectric Layers by Piquet, J., Bermond, C., Thomas, M., Farcy, A., Lacrevaz, T., Blampey, B., Torres, J., Flechet, B., Angenieux, G.

“…High frequency characterizations of ultra thin 32 nm PECVD Si 3 N 4 dielectric on advanced metal-insulator-metal (MIM) capacitors are presented. We focused on…”
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Investigation on TSV impact on 65nm CMOS devices and circuits by Chaabouni, H, Rousseau, M, Leduc, P, Farcy, A, El Farhane, R, Thuaire, A, Haury, G, Valentian, A, Billiot, G, Assous, M, De Crecy, F, Cluzel, J, Toffoli, A, Bouchu, D, Cadix, L, Lacrevaz, T, Ancey, P, Sillon, N, Flechet, B

“…4μm wide copper Through Silicon Vias (TSV) were processed on underlying 65nm CMOS devices and circuits in order to evaluate the impact of the three-dimensional…”
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Evaluation of 3D interconnect routing and stacking strategy to optimize high speed signal transmission for memory on logic by Roullard, J., Farcy, A., Capraro, S., Lacrevaz, T., Bermond, C., Houzet, G., Charbonnier, J., Fuchs, C., Ferrandon, C., Leduc, P., Flechet, B.

“…3D stacking technologies are electrically studied to predict high speed data transmission for memory on logic applications. Maximal frequency of bandwidth for…”
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Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz by Defaÿ, E., Lacrevaz, T., Vo, T. T., Sbrugnera, V., Bermond, C., Aïd, M., Fléchet, B.

“…The radio frequency characterization of Cu/TiN/Pb(Zr,Ti)O3 stack on glass is performed using coplanar transmission lines. A dielectric relaxation is evidenced…”
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Keep on shrinking interconnect size: Is it still the best solution? by Deschacht, D, de Rivaz, S, Farcy, A, Lacrevaz, T, Flechet, B

“…According to the evolution between each new technological generation of CMOS ICs, ITRS suggests a reduction in interconnect sizes by a factor of around square…”
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Effective interconnect networks design in CMOS 45 nm circuits to joint reductions of XT and delay for transmission of very high speed signals by de Rivaz, S, Farcy, A, Deschacht, D, Lacrevaz, T, Flechet, B

“…When high speed integrated digital circuits technology scales down from one node to the other as ITRS recommends, a significant gain is obtained on signal…”
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Ferroelectric properties of Pb ( Zr , Ti ) O 3 thin films until 40 GHz by Defaÿ, E., Lacrevaz, T., Vo, T. T., Sbrugnera, V., Bermond, C., Aïd, M., Fléchet, B.

“…The radio frequency characterization of Cu / TiN / Pb ( Zr , Ti ) O 3 stack on glass is performed using coplanar transmission lines. A dielectric relaxation is…”
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