Search Results - "Lachal, L"

Influence of dual Ge/C pre-amorphization implantation on the Ni1−xPtxSi phase nucleation and growth mechanisms by Guillemin, S., Gergaud, P., Bernier, N., Lachal, L., Mazen, F., Jannaud, A., Nemouchi, F., Rodriguez, Ph

“…The impact of dual Ge/C pre-amorphization implantation (PAI) processes on the Ni0.9Pt0.1(7 nm)/Si system phase sequence has been investigated by advanced X-ray…”
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Mobility impairment is associated with urge but not stress urinary incontinence in community‐dwelling older women: results from the Ossébo study by Fritel, X, Lachal, L, Cassou, B, Fauconnier, A, Dargent‐Molina, P

“…Objective To assess the association between functional limitations related to mobility and urinary incontinence (UI) in elderly women. Design An observational…”
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Impact of the pre amorphization by Ge implantation on Ni0.9Pt0.1 silicide by Delwail, C., Joblot, S., Mazen, F., Abbate, F., Lachal, L., Milesi, F., Bertoglio, M., Papon, A.M., Gregoire, M., Rodriguez, P.H., Mangelinck, D.

“…The impact of the Pre Amorphization by Ge Implantation (PAI) on Ni0.9Pt0.1 silicide is studied. Reactions between a 10 nm thick Ni0.9Pt0.1 film and Si (100)…”
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A comparative study of C, N and Xe pre-amorphization implantation processes for improving the thermal stability of NiSi films by Guillemin, S., Lachal, L., Gergaud, P., Grenier, A., Nemouchi, F., Mazen, F., Rodriguez, Ph

“…In this paper, a comparative study of C-, N- and Xe-based pre-amorphization implantation (PAI) processes is proposed. The impact of the use of such processes…”
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Influence of dual Ge/C pre-amorphization implantation on the Ni1−Pt Si phase nucleation and growth mechanisms by Guillemin, S., Gergaud, P., Bernier, N., Lachal, L., Mazen, F., Jannaud, A., Nemouchi, F., Rodriguez, Ph

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Impact of the pre amorphization by Ge implantation on Ni$_{0.9}$Pt$_{0.1}$ silicide by Delwail, C., Joblot, S., Mazen, F., Abbate, F., Lachal, L., Milesi, F., Bertoglio, M., Papon, A.M., Gregoire, M., Rodriguez, P.H., Mangelinck, D., Mangelinck, Dominique

“…The impact of the Pre Amorphization by Ge Implantation (PAI) on Ni0.9Pt0.1 silicide is studied. Reactions between a 10 nm thick Ni0.9Pt0.1 film and Si (100)…”
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Mobility impairment is associated with urge but not stress urinary incontinence in community‐dwelling older women: results from the O ssébo study by Fritel, X, Lachal, L, Cassou, B, Fauconnier, A, Dargent‐Molina, P

“…Objective To assess the association between functional limitations related to mobility and urinary incontinence ( UI ) in elderly women. Design An…”
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Improvement of HfO2 based RRAM array performances by local Si implantation by Barlas, M., Grossi, A., Grenouillet, L., Vianello, E., Nolot, E., Vaxelaire, N., Blaise, P., Traore, B., Coignus, J., Perrin, F., Crochemore, R., Mazen, F., Lachal, L., Pauliac, S., Pellissier, C., Bernasconi, S., Chevalliez, S., Nodin, J. F., Perniola, L., Nowak, E.

“…A thorough insight of Si implantation in HfÜ2-based OXRAM is presented, from a material standpoint up to a 4 kbit 1T-1R array. We demonstrate for the first…”
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High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration by Micout, J., Lapras, V., Batude, P., Fenouillet-Beranger, C., Lacord, J., Sklenard, B., Mathieu, B., Rafhay, Q., Mazzocchi, V., Colinge, J.-P, Lachal, L., Garros, X., Casse, M., Toffoli, A., Romano, G., Allain, F., Brunet, L., Hartmann, J.-M, Bortolin, R., Mazen, F., Barraud, S., Rambal, N., Tabone, C., Samson, M.-P, Besombes, P., Delaye, V., Saghi, Z., Loup, V., Comboroure, C., Balan, V., Desvoivres, L., Vizioz, C., Ghibaudo, G., Vinet, M.

“…For the first time, a low temperature (LT) FinFET process is demonstrated, using Solid Phase Epitaxy Regrowth (SPER), gate last integration and Self Aligned…”
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Ultra-fine pitch redistribution for 3D interposer by Segaud, R., Aumont, C., Eleouet, R., Allouti, N., Mourier, T., Gabette, L., Minoret, S., Magis, T., Roman, A., Hida, R., Ratin, C., Lachal, L., Delachanal, S., Cordini, M. L., Nardi, P., Feldis, H., Charpentier, A., Chausse, P., Laviron, C., Cheramy, S.

“…This study focuses on the development of a low cost and very fine pitch (8 μm space/8 μm line width) Redistribution Layer (RDL) for a 3D silicon interposer…”
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Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity by Le Royer, C., Tabone, C., Previtali, B., Truche, R., Allain, F., Pouydebasque, A., Romanjek, K., Barral, V., Vinet, M., Hartmann, J.-M., Augendre, E., Grampeix, H., Lachal, L.

“…We report here experimental investigations on GeOI pMOSFET: Besides the +65% mobility enhancement in narrow channel GeOI pMOSFETs as compared to wide channels,…”
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