Search Results - "LaRoche, J. R"

ZnO nanowire growth and devices by Heo, Y.W., Norton, D.P., Tien, L.C., Kwon, Y., Kang, B.S., Ren, F., Pearton, S.J., LaRoche, J.R.

“…The large surface area of ZnO nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them…”
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Monolithic integration of InP-based transistors on Si substrates using MBE by Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.

“…We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III–V devices with Si CMOS logic on a common Si substrate…”
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Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning by Ip, K., Gila, B. P., Onstine, A. H., Lambers, E. S., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Kim, S., LaRoche, J. R, Ren, F.

“…UV-ozone cleaning prior to metal deposition of either e-beam Pt contacts or sputtered W contacts on n-type single-crystal ZnO is found to significantly improve…”
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Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO by Ip, K, Gila, B.P, Onstine, A.H, Lambers, E.S, Heo, Y.W, Baik, K.H, Norton, D.P, Pearton, S.J, Kim, S, LaRoche, J.R, Ren, F

“…The role of UV ozone cleaning on the characteristics of Pt contacts on n-type (n∼1017cm−3) bulk single-crystal zinc oxide (ZnO) is reported. The contacts are…”
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Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO by Ip, K., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Kim, S., LaRoche, J. R., Ren, F.

“…The Schottky barrier height of Pt contacts on n-type (n∼1016 cm−3) thin film ZnO deposited by pulsed laser deposition was obtained from current–voltage…”
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Design of edge termination for GaN power Schottky diodes by Laroche, J. R., Ren, F., Baik, K. W., Pearton, S. J., Shelton, B. S., Peres, B.

“…The GaN Schottky diodes capable of operating in the 300-700-V range with low turn-on voltage (0.7 V) and forward conduction currents of at least 10 A at 1.4 V…”
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Large-scale statistical analysis of secondary xylem ESTs in pine by Pavy, Nathalie, Laroche, Jérôme, Bousquet, Jean, Mackay, John

“…A computational analysis of pine transcripts was conducted to contribute to the functional annotation of conifer sequences. A statistical analysis of expressed…”
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Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers by Irokawa, Y., Luo, B., Kim, Jihyun, LaRoche, J. R., Ren, F., Baik, K. H., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Park, S. S., Park, Y. J.

“…p-i-n rectifiers were fabricated on epitaxial layers grown on free-standing GaN substrates. The forward turn-on voltage, VF was ∼5 V at 300 K and displayed a…”
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Fabrication approaches to ZnO nanowire devices by LaRoche, J. R., Heo, Y. W., Kang, B. S., Tien, L. C., Kwon, Y., Norton, D. P., Gila, B. P., Ren, F., Pearton, S. J.

“…To date, most of the work on ZnO nanostructures has focused on the synthesis methods and there have been only a few reports of the electrical characteristics…”
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Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO by Ip, K., Baik, K. H., Heo, Y. W., Norton, D. P., Pearton, S. J., LaRoche, J. R., Luo, B., Ren, F., Zavada, J. M.

“…E-beam deposited Ti/Al/Pt/Au contacts on undoped (n∼10 17   cm −3 ) bulk ZnO showed minimum specific contact resistance, ρ c , of ∼6×10 −4  Ω  cm 2 after…”
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InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor by Chang, P. C., Baca, A. G., Li, N. Y., Sharps, P. R., Hou, H. Q., Laroche, J. R., Ren, F.

“…We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown…”
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High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate by Kazior, T E, LaRoche, J R, Urteaga, M, Bergman, J, Choe, M J, Lee, K J, Seong, T, Seo, M, Yen, A, Lubyshev, D, Fastenau, J M, Liu, W K, Smith, D, Clark, D, Thompson, R, Bulsara, M T, Fitzgerald, E A, Drazek, C, Guiot, E

“…We present recent results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered…”
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160-A bulk GaN Schottky diode array by Baik, K. H., Irokawa, Y., Kim, Jihyun, LaRoche, J. R., Ren, F., Park, S. S., Park, Y. J., Pearton, S. J.

“…Pt Schottky rectifier arrays were fabricated on 200-μm-thick, freestanding GaN layers. Even with the reduced dislocation density in these layers (∼105 cm−2)…”
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Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor by Chang, P.C., Li, N.Y., Baca, A.G., Hou, H.Q., Monier, C., Laroche, J.R., Ren, F., Pearton, S.J.

“…We have demonstrated the dc and rf characteristics of a novel p-n-p GaAs/InGaAsN/GaAs double heterojunction bipolar transistor. This device has near ideal…”
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Implanted p– n junctions in GaN by Cao, X.A, LaRoche, J.R, Ren, F, Pearton, S.J, Lothian, J.R, Singh, R.K, Wilson, R.G, Guo, H.J, Pennycook, S.J

“…29 Si + ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100°C was used to create n +/ p junctions. The junction ideality factor was ∼2,…”
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Pt ∕ ZnO nanowire Schottky diodes by Heo, Y. W., Tien, L. C., Norton, D. P., Pearton, S. J., Kang, B. S., Ren, F., LaRoche, J. R.

“…Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates. The…”
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Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors by LaRoche, J.R., Ren, F., Temple, D., Pearton, S.J., Kuo, J.M., Baca, A.G., Cheng, P., Park, Y.D., Hudspeth, Q., Hebard, A.F., Arnason, S.B.

“…Wet etch processing techniques for InGaAs/InAl/As/InGaAs transistors are used to fabricate an N-channel HEMT (High Electron Mobility Transistor) with Fe…”
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More Than Moore: GaN HEMTs and Si CMOS Get It Together by Kazior, T. E., LaRoche, J. R., Hoke, W. E.

“…Advances in silicon technology continue to revolutionize microelectronics. However, Si cannot do everything and circuits based on other materials systems are…”
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Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications by Monier, C, Chang, P.C, Li, N.Y, LaRoche, J.R, Baca, A.G, Hou, H.Q, Ren, F, Pearton, S.J

“…The performance capabilities of pnp InGaAsN-based heterojunction bipolar transistors (HBTs) for use in complementary HBT technology have been theoretically…”
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The embryonic expression patterns of zebrafish genes encoding LysM-domains by Laroche, F.J.F., Tulotta, C., Lamers, G.E.M., Meijer, A.H., Yang, P., Verbeek, F.J., Blaise, M., Stougaard, J., Spaink, H.P.

“…•Identification of LysM domain-encoding genes in zebrafish embryos.•Spatio-temporal analysis of the LysMD and OXR families expression patterns.•Comparison of…”
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