Search Results - "LaLumondiere, Stephen"

Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing by Hales, Joel M., Khachatrian, Ani, Buchner, Stephen, Ildefonso, Adrian, Monahan, Daniele M., Lalumondiere, Stephen D., Mcmorrow, Dale

“…By scanning the charge-deposition profile produced by a pulsed laser throughout a device, the spatially dependent charge-collection efficiency (CCE) can be…”
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Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires by Chang, Chia-Chi, Chi, Chun-Yung, Yao, Maoqing, Huang, Ningfeng, Chen, Chun-Chung, Theiss, Jesse, Bushmaker, Adam W, LaLumondiere, Stephen, Yeh, Ting-Wei, Povinelli, Michelle L, Zhou, Chongwu, Dapkus, P. Daniel, Cronin, Stephen B

“…We report a systematic study of carrier dynamics in Al x Ga1–x As-passivated GaAs nanowires. With passivation, the minority carrier diffusion length (L diff)…”
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A Comparison of Total-Ionizing-Dose Effects in Silicon and Silicon-Nitride Waveguides by Ringel, Brett L., Teng, Jeffrey W., Hosseinzadeh, Mozhgan, Sam, Delwyn G., Francis, Peter J., Parameswaran, Hari, Little, Arielle, Tzintzarov, George N., Monahan, Daniele M., LaLumondiere, Stephen D., Cressler, John D.

“…The total-ionizing-dose (TID) responses of silicon and low-loss silicon-nitride (SiN) integrated waveguides are evaluated. Mach-Zehnder interferometers (MZIs),…”
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Direct Measurement of Total-Ionizing-Dose-Induced Phase Shifts in Commercially Available, Integrated Silicon-Photonic Waveguides by Tzintzarov, George N., Teng, Jeffrey W., Nergui, Delgermaa, Ringel, Brett L., Lalumondiere, Stephen D., Monahan, Daniele M., Little, Arielle, Cressler, John D.

“…In this work, integrated silicon photonic waveguides are exposed to ionizing radiation. A micro-beam X-ray source was utilized to deliver an isolated dose to a…”
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New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles by Hales, Joel M., Cressler, John D., McMorrow, Dale, Khachatrian, Ani, Buchner, Stephen, Warner, Jeffrey, Ildefonso, Adrian, Tzintzarov, George N., Nergui, Delgermaa, Monahan, Daniele M., LaLumondiere, Stephen D.

“…A novel approach for two-photon absorption (TPA) pulsed-laser testing produces extended charge deposition profiles that are analogous to those produced by…”
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Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics by Hales, Joel M, Khachatrian, Ani, Warner, Jeffrey, Buchner, Stephen, Ildefonso, Adrian, Tzintzarov, George N, Nergui, Delgermaa, Monahan, Daniele M, LaLumondiere, Stephen D, Cressler, John D, McMorrow, Dale

“…Pulsed-laser testing is an attractive tool for studying space-based radiation effects in microelectronics because it provides a high degree of spatial…”
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Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting From Heavy-Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation by Ryder, Kaitlyn L., Ryder, Landen D., Sternberg, Andrew L., Kozub, John A., Zhang, En Xia, LaLumondiere, Stephen D., Monahan, Daniele M., Bonsall, Jeremy P., Khachatrian, Ani, Buchner, Stephen P., McMorrow, Dale, Hales, Joel M., Zhao, Yuanfu, Wang, Liang, Wang, Chuanmin, Weller, Robert A., Schrimpf, Ronald D., Weiss, Sharon M., Reed, Robert A.

“…Heavy-ion, focused X-ray, and pulsed laser single-event transient (SET) experiments are performed on a silicon epitaxial diode. Collected charge, transient…”
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Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam by Nergui, Delgermaa, Ildefonso, Adrian, Tzintzarov, George N., Lourenco, Nelson E., Omprakash, Anup P., Goley, Patrick S., Fleetwood, Zachary E., LaLumondiere, Stephen D., Bonsall, Jeremy P., Monahan, Daniele M., Kettering, Hunter, Brewe, Dale L., Cressler, John D.

“…This article presents an experimental study of single-event transients (SETs) induced by pulsed X-rays in SiGe heterojunction bipolar transistors (HBTs)…”
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Investigating Pulsed X-ray Induced SEE in Analog Microelectronic Devices by Cardoza, David, LaLumondiere, Stephen D., Wells, Nathan P., Tockstein, Michael A., Brewe, Dale L., Lotshaw, William T., Moss, Steven C.

“…We investigate analog single event transient (ASET) generation in an LM124 operational amplifier using focused pulsed x-rays and 800 nm femtosecond laser…”
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Application of a Focused, Pulsed X-ray Beam for Total Ionizing Dose Testing of Bipolar Linear Integrated Circuits by Lalumondiere, Stephen D., Dillingham, Erik C., Scofield, Adam C., Bonsall, Jeremy P., Karuza, Petras, Brewe, Dale L., Schrimpf, Ronald D., Sternberg, Andrew L., Wells, Nathan P., Cardoza, David M., Lotshaw, William T., Moss, Steven C.

“…We demonstrate the utility of focused, pulsed X-rays for investigating localized total ionizing dose effects in bipolar analog integrated circuits. Using the…”
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Comparison of Single Event Transients Generated by Short Pulsed X-Rays, Lasers and Heavy Ions by Cardoza, David, LaLumondiere, Stephen D., Tockstein, Michael A., Brewe, Dale L., Wells, Nathan P., Koga, Rokutaro, Gaab, Kevin M., Lotshaw, William T., Moss, Steven C.

“…We report an experimental study of the transients generated by pulsed x-rays, heavy ions, and different laser wavelengths in a Si p-i-n photodiode. We compare…”
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Single Event Transients Induced by Picosecond Pulsed X-Ray Absorption in III-V Heterojunction Transistors by Cardoza, D. M., LaLumondiere, S. D., Tockstein, M. A., Witczak, S. C., Sin, Y., Foran, B. J., Lotshaw, W. T., Moss, S. C.

“…We perform measurements which show that focused, picosecond pulses of x-rays can be used to generate single event transients (SET) in a GaAs heterostructure…”
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Total-Ionizing-Dose Effects in Integrated Silicon Phase Shifters Using Localized X-Ray Pulses by Hosseinzadeh, Mozhgan, Teng, Jeffrey W., Ringel, Brett L., Francis, Peter J., Heimerl, Justin P., Tzintzarov, George N., Little, Arielle, Bonsall, Jeremy P., LaLumondiere, Stephen D., Monahan, Daniele M., Cressler, John D.

“…This study investigates the effects of total ionizing dose (TID) damage on silicon photonic (SiPh) phase shifters using Mach-Zehnder modulators (MZMs). By…”
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A "space experiment" examining the response of a geosynchronous quartz crystal oscillator to various levels of solar activity by LaLumondiere, S.D., Moss, S.C., Camparo, J.C.

“…Viewing the frequency history of the high-quality quartz crystal oscillator onboard Milstar FLT-1 as a "space experiment," we have examined the response of the…”
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A TID and SEE Radiation-Hardened, Wideband, Low-Noise Amplifier by Mossawir, B., Linscott, I.R., Inan, U.S., Roeder, J.L., Osborn, J.V., Witczak, S.C., King, E.E., LaLumondiere, S.D.

“…We have developed a radiation-hardened, highly linear, wideband, low-noise amplifier (LNA) with programmable gain to serve as the front-end of a plasma-wave…”
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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory by Bosser, A. L., Gupta, V., Javanainen, A., Tsiligiannis, G., LaLumondiere, S. D., Brewe, D., Ferlet-Cavrois, V., Puchner, H., Kettunen, H., Gil, T., Wrobel, F., Saigne, F., Virtanen, A., Dilillo, L.

“…This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed…”
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Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam by Khachatrian, A., Roche, N. J.-H, Buchner, S. P., Koehler, A. D., Anderson, T. J., McMorrow, D., Lalumondiere, S. D., Bonsall, J. P., Dillingham, E. C., Brewe, D. L.

“…Focused, pulsed X-rays are used to generate single-event transients (SETs) in metal-insulator-semiconductor (MIS)-gate AlGaN/GaN high-electron-mobility…”
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Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al0.3Ga0.7N/GaN HEMTs by Khachatrian, A., Roche, N. J-H, Buchner, S. P., Koehler, A. D., Anderson, T. J., Hobart, K. D., McMorrow, D., LaLumondiere, S. D., Wells, N. P., Bonsall, J., Dillingham, E. C., Karuza, P., Brewe, D. L., Lotshaw, W. T., Moss, S. C., Ferlet-Cavrois, V., Muschitiello, M.

“…A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al 0.3 Ga 0.7 N/GaN HEMTs. Measured SET amplitudes and…”
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Electrical and Optical Characterization of Surface Passivation in GaAs Nanowires by Chang, Chia-Chi, Chi, Chun-Yung, Yao, Maoqing, Huang, Ningfeng, Chen, Chun-Chung, Theiss, Jesse, Bushmaker, Adam W., LaLumondiere, Stephen, Yeh, Ting-Wei, Povinelli, Michelle L., Zhou, Chongwu, Dapkus, P. Daniel, Cronin, Stephen B.

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Carrier dynamics in catastrophic optical bulk damaged InGaAs-AlGaAs strained QW broad-area lasers by Yongkun Sin, LaLumondiere, Stephen, Lotshaw, William T., Ives, Neil, Moss, Steven C.

“…We investigated catastrophic optical bulk damage in high power broad-area InGaAs strained quantum well lasers with windowed n-contacts using time-resolved EL…”
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